Abstract: An image sensor may include a pixel array with global shutter phase detection pixels. The global shutter phase detection pixels may include global shutter charge storage regions. To prevent the global shutter charge storage regions from being exposed to incident light, a shielding layer may be provided. The shielding layer may also cover portions of underlying photodiodes to produce an asymmetric response to incident light in the underlying photodiodes. The shielding layer may be formed as backside trench isolation with an absorptive metal. The absorptive metal may absorb incident light, reducing the likelihood of the incident light reaching the charge storage regions. An additional absorptive layer may also be provided on or in the shielding layer.

Abstract: An image sensor may include a pixel array with high dynamic range functionality and phase detection pixels. The phase detection pixels may be arranged in phase detection pixel groups. Each phase detection pixel group may include three adjacent pixels arranged consecutively in a line. A single microlens may cover all three pixels in the phase detection pixel group, or two microlenses may combine to cover the three pixels in the phase detection pixel group. The edge pixels in each phase detection pixel group may have the same integration time and the same color. The middle pixel in each phase detection pixel group may have the same or different color as the edge pixels, and the same or different integration time as the edge pixels. Phase detection pixel groups may also be formed from two pixels that each are 1.5 times the size of neighboring pixels.

Abstract: An imaging system may include a first image sensor die stacked on top of a second image sensor die. A pixel array may include first pixels having photodiodes in the first image sensor die and second pixels having photodiodes in the second image sensor die. The first pixels may be optimized to detect a first type of electromagnetic radiation (e.g., visible light), whereas the second pixels may be optimized to detect a second type of electromagnetic radiation (e.g., infrared light). Light guide channels may be formed in the first image sensor die to help guide incident light to the photodiodes in the second image sensor substrate. The first and second image sensor dies may be bonded at a wafer level. A first image sensor wafer may be a backside illumination image sensor wafer and a second image sensor wafer may be a front or backside illumination image sensor wafer.

Abstract: An image sensor with an array of pixels is provided. The array may include a semiconductor substrate having opposing first and second sides. A first photodiode region may be implanted in the semiconductor substrate through the first side. A second photodiode region may be implanted in the semiconductor substrate through the second side. The second photodiode region may be implanted to overlap with the first photodiode region in the semiconductor substrate to form a continuous photodiode region that extends from the first side to the second side of the substrate. The continuous region may generate charge in response to image light. The continuous region may belong to a single pixel that generates an image signal from the charge. The image signal may be conveyed to readout circuitry via metallization layers formed over the substrate. The first and second photodiode regions may be thermally activated prior to forming the metallization layers.

Abstract: An image sensor may include a pixel array having visible and infrared imaging pixels for simultaneously detecting light in the visible and infrared spectral ranges. The pixel array may include an array of photodiodes, an array of filter elements formed over the photodiodes, and an array of microlenses formed over the array of filter elements. The filter elements may include infrared cutoff filter elements that block infrared light while passing visible light. The infrared cutoff filter elements may be formed from a patterned layer of infrared blocking material. Each visible imaging pixel includes a portion of the infrared blocking material and a color filter element. Each infrared imaging pixel is aligned with an opening in the infrared blocking material. The opening may be filled with an infrared pass filter element that passes infrared light while blocking visible light.

Abstract: A backside illuminated image sensor with an array of pixels formed in a substrate is provided. To improve surface planarity, bond pads formed at the periphery of the array of pixels may be recessed into a back surface of the substrate. The bond pads may be recessed into a semiconductor layer of the substrate, may be recessed into a window in the semiconductor layer, or may be recessed in a passivation layer and covered with non-conductive material such as resin. In order to further improve surface planarity, a window may be formed in the semiconductor layer at the periphery of the array of pixels, or scribe region, over alignment structures. By providing an image sensor with improved surface planarity, device yield and time-to-market may be improved, and window framing defects and microlens/color filter non-uniformity may be reduced.

Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.

Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.

Abstract: An imaging system may include an image sensor die, which may be backside illuminated (BSI). A light shielding layer and a conductive layer may be formed in the image sensor die. First and second portions of the conductive layer may be electrically isolated, so that the second conductive portion may be coupled to other power supply signals through a bond pad region, while the light shield may be shorted to ground. Optionally, the first and second portions may both be coupled to ground. The light shield may also be shorted through the bond pad region in a continuous conductive layer. A through oxide via may be formed in the image sensor die to couple metal interconnect structures to the conductive layer. Color filter containment structures may be formed over active image sensor pixels on the image sensor die, which may be selectively etched to improve planarity.

Abstract: A system may include an image sensor having a pixel array that receives light in an environment. The light received at the pixel array may be transmitted by an external device that encodes information using the wavelength, spatial patterning, temporal patterning, or other characteristics of the light. In response to receiving the light, the pixel array may generate electrical signals that are processed to decode the information in the light. The system may compare the decoded information to user preferences to determine if the information is relevant to a user. In response to determining that the information is relevant to the user, the system may display the information to the user, transmit a pulse including user preference information, or change an operating state of the image sensor.

Abstract: An image sensor may include a pixel array with a plurality of image pixels and a plurality of phase detection pixels. The plurality of phase detection pixels may have a greater stack height than the plurality of image pixels. Varying the stack height of pixels in the pixel array may enable the stack height of the image pixels to be optimized for gathering image data while the stack height of the phase detection pixels is optimized to gather phase detection data. A support structure may be used to increase the stack height of the phase detection pixels. The support structure may be formed over a color filter array or one or more microlenses. The support structure may include color filter elements to supplement or replace the color filter elements of the color filter array.

Abstract: An imaging device may include a primary imaging sensor and a secondary imaging sensor. The secondary imaging sensor may monitor a scene being imaged by the imaging device for trigger criteria such as sudden movement, changes in the intensity of ambient light, and the presence of a particular object or person. Upon detection of relevant trigger criteria, the imaging device may activate the primary imaging sensor and capture one or more images of the scene with the primary imaging sensor. Operational parameters of the primary imaging sensor including framerate and exposure settings may be based on data from the secondary imaging sensor. The secondary imaging sensor may have a lower power consumption than the primary imaging sensor such that monitoring the scene with the secondary imaging sensor and only activating the primary imaging sensor upon detection of the relevant trigger criteria enables an efficient and adaptive imaging system.

Abstract: An imaging system may include several different types of pixels that are each configured to detect different characteristics of light received at the imaging system. An imaging system may include image sensing pixels that detect the wavelength and intensity of the light, direction sensing pixels that detect the directionality of the light, polarization sensing pixels that detect a polarization state of the light, and diffractive wavelength separation pixels that detect multiple different wavelength components of the light. One or more pixels of the different types may be arranged in a pixel cluster. A pixel cluster that includes different pixel types may detect spatially correlated information for multiple characteristics of the light. Multiple pixel clusters may he arranged in a pixel array that generates an image based on spatially correlated information for the different characteristics of the light.

Abstract: A system may include an image sensor having a pixel array that receives light in an environment. The light received at the pixel array may be transmitted by an external device that encodes information using the wavelength, spatial patterning, temporal patterning, or other characteristics of the light. In response to receiving the light, the pixel array may generate electrical signals that are processed to decode the information in the light. The system may compare the decoded information to user preferences to determine if the information is relevant to a user. In response to determining that the information is relevant to the user, the system may display the information to the user, transmit a pulse including user preference information, or change an operating state of the image sensor.

Abstract: An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release layer. The carrier substrate may then be flipped and the layer of color filter material may be bonded to the integrated circuit. Heat may be applied to activate the release layer and the carrier substrate may be removed at the interface between the release layer and the color filter material. The layer of color filter material may be patterned either before bonding the layer of color filter material or after the carrier substrate is removed. A layer of microlenses may be formed over the array of color filter elements using a carrier substrate.

Abstract: An image sensor may include a pixel array having visible and infrared imaging pixels for simultaneously detecting light in the visible and infrared spectral ranges. The pixel array may include an array of photodiodes, an array of filter elements formed over the photodiodes, and an array of microlenses formed over the array of filter elements. The filter elements may include infrared cutoff filter elements that block infrared light while passing visible light. The infrared cutoff filter elements may be formed from a patterned layer of infrared blocking material. Each visible imaging pixel includes a portion of the infrared blocking material and a color filter element. Each infrared imaging pixel is aligned with an opening in the infrared blocking material. The opening may be filled with an infrared pass filter element that passes infrared light while blocking visible light.

Abstract: An imaging system may include multiple imaging arrays. One or more of the arrays may be a low-power array that detects trigger events in observed scenes and, in response to the detection of a trigger event, activates one or more primary imaging arrays. One or more of the arrays may be a polarization sensing array, a hyperspectral array, a stacked photodiode array, a wavefront sensing array, a monochrome array, a single color array, a dual color array, or a full color array. In at least one embodiment, image data from a stacked photodiode imaging array may be enhanced using image data from a separate monochrome imaging array. In at least another embodiment, image data from a wavefront sensing array may provide focus detection for a full color array.

Abstract: An imaging system may be used to image a fluid sample containing particles. The imaging system may include a fluid channel that receives the fluid sample and a reactive agent that selectively attaches to target particles in the fluid sample. An activation mechanism may be operated to trigger a chemical reaction between the fluid sample and the reactive agent. The imaging system may include an image sensor integrated circuit and image sensor pixels to capture a detectable effect of the chemical reaction. The image sensor integrated circuit may be synchronized to the activation mechanism such that it captures an image of the fluid sample after the chemical reaction is triggered by the activation mechanism.

Abstract: An imaging device may include a primary imaging sensor and a secondary imaging sensor. The secondary imaging sensor may monitor a scene being imaged by the imaging device for trigger criteria such as sudden movement, changes in the intensity of ambient light, and the presence of a particular object or person. Upon detection of relevant trigger criteria, the imaging device may activate the primary imaging sensor and capture one or more images of the scene with the primary imaging sensor. Operational parameters of the primary imaging sensor including framerate and exposure settings may be based on data from the secondary imaging sensor. The secondary imaging sensor may have a lower power consumption than the primary imaging sensor such that monitoring the scene with the secondary imaging sensor and only activating the primary imaging sensor upon detection of the relevant trigger criteria enables an efficient and adaptive imaging system.

Abstract: Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.