Abstract: A heat sink which is adaptable to form a module of a modular luminaire which uses LED light sources. The heat sink may have cooling fins projecting in three directions from a base member and two walls projecting from the base member. Fastener holes are provided as channels extending the length of the heat sink at the base of cooling fins, for example. This configuration enables a novel heat sink having both cooling fins and also structure corresponding to screw holes to be formed by extrusion. One channel may be centered within the heat sink, so that the heat sink can be connected by two opposed fasteners and rotated thereabout to enable minor angular positional adjustment within an associated luminaire.

Abstract: A modular luminaire which uses LED light sources. The basic frame comprises two end pieces compressed together by through bolts. At least one elongated heat sink is compressed between the end pieces. Each heat sink may bear a plurality of LEDs mounted on a printed circuit board which may have an integral metallic backplate, and is installed on one of the heat sinks with a layer of heat conductive grease therebetween. The heat sinks have fins projecting in three directions, the fourth direction being accounted for by the LEDs, and are rotatable about their longitudinal axes to adjust direction of light propagation. The heat sinks are arrayed in an arc, so that the outside heat sinks shield observers from direct glare from opposed heat sinks. Heat sinks may be extruded to form cooling fins and slots which may receive fasteners such as screws.

Abstract: Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row.

Abstract: The present invention is directed to methods of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a high-K dielectric material assisted with an ion beam to enable the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric films have a high degree of crystallographic alignment at grain boundaries. Another disclosed method involves providing a substrate and then angularly depositing a material onto the substrate in order to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The result is a dielectric film having a high degree of crystallographic alignment at grain boundaries of the film.

Abstract: The present invention provides in an adjustable shower head having a user-operable variable spray pattern. The shower head includes an adjustment mechanism that is hydropowered by water passing through the shower head, upon activation by a user.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: A lens particularly suited to elongated grooved lens holders such as heat sinks for light emitting diodes. The lens may have a curved surface which projects light in rectangular beams and a radial flange for engaging grooves of a grooved lens holder. Curvature is that of a flattened or compressed sine wave, with less than one full wave being formed along the lens. In one aspect of the invention, the crest of the wave, which would ordinarily be domed, may be flat. The radial flange has straight sides to enable contiguity when arrayed in abutment as well as for cooperating with the grooves of the lens holder.

Abstract: The present invention is directed to a method of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a material used in forming the high-K dielectric film and also using an ion beam to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric film having a high degree of crystallographic alignment at grain boundaries of the film. Another disclosed method involves providing a substrate and then angularly depositing a material onto the substrate in order to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric film having a high degree of crystallographic alignment at grain boundaries of the film.

Abstract: Process and apparatus provide reactive radicals generated from a remote plasma source which contact a portion of a substrate surface simultaneous with a contact of the same substrate surface with a light source which locally activates the portion of the substrate surface in contact with said radicals.

Abstract: In a method of fabricating a metal-insulator-metal (MIM) device, initially, a first electrode is provided. An oxide layer is provided on the first electrode, and a protective layer is provided on the oxide layer. An opening through the protective layer is provided to expose a portion of the oxide layer, and a portion of the first electrode underlying the exposed portion of the oxide layer is oxidized. A second electrode is provided in contact with the exposed portion of the oxide layer. In alternative embodiments, the initially provided oxide layer may be eliminated, and spacers of insulating material may be provided in the opening.

Abstract: Methods of forming a memory cell containing two split sub-lithographic charge storage nodes on a semiconductor substrate are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing exposed portions of a first poly layer while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing exposed portions of a charge storage layer while leaving portions of the charge storage layer protected by the two split sub-lithographic first poly gates, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor wafer using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links. The structures are arranged in rows and may be processed in either an on-axis mode or a cross-axis mode. In the on-axis mode, the beam spots fall on structures in the same row as they move along the row. In the cross-axis mode, the beam spots fall on structures in different rows as they move along the rows.

Abstract: The present invention relates to the detection of statistically significant changes in tissue characteristics within the eye. Change in a tissue characteristic is statistically significant when the magnitude of the change exceeds the test-retest measurement variability. One embodiment of the present invention analyzes the data using more than one statistic in order to capture global, regional, and/or local changes that are essential to clinical interpretation of changes in a tissue characteristic. In one embodiment of the present invention, the tissue characteristic tested is RNFL thickness.

Abstract: A method to maintain a well-defined gate stack profile, deposit or grow a uniform gate dielectric, and maintain gate length CD control by means of an inert insulating liner deposited after dummy gate etch and before the spacer process. The liner material is selective to wet chemicals used to remove the dummy gate oxide thereby preventing undercut in the spacer region. The method is aimed at making the metal gate electrode technology a feasible technology with maximum compatibility with the existing fabrication environment for multiple generations of CMOS transistors, including those belonging to the 65 nm, 45 nm and 25 nm technology nodes, that are being used in analog, digital or mixed signal integrated circuit for various applications such as communication, entertainment, education and security products.

Abstract: A method of replacing a top oxide around a storage element of a memory device is provided. The method can involve removing a core first poly and core first top oxide in a core region while not removing a periphery first poly in a periphery region on a semiconductor substrate; forming a second top oxide around a storage element in the core region and on the periphery first poly in the periphery region; forming a second poly over the semiconductor substrate in both the core and periphery regions; removing the second poly and second top oxide in the periphery region; and forming a third poly on the semiconductor substrate in both the core and periphery regions.

Abstract: Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: A method of suppressing distortion of a working laser beam directed for incidence on a target specimen presented for processing by a laser link processing system uses a spatial filter to remove stray light-induced distortion from the working laser beam.