Abstract: Various systems and methods are described for implementing trust authority or trust attestation verification operations, including for Trust-as-a-Service or Attestation-as-a-Service implementations, in accordance with the techniques discussed herein. In various examples, operations and configurations are described to enable service-to-service attestation using a trust authority, to operate an attestation service, and to coordinate trust operations between relying and requesting parties.

Abstract: A method of manufacturing a semiconductor device, including: forming a plurality of gate strips, wherein each gate strip is arranged to be a gate terminal of a transistor; forming a plurality of first metal strips above the plurality of gate strips; and forming a plurality of second metal strips above the plurality of first metal strips, wherein the plurality of second metal strips are co-planar, and each second metal strip and one of the first metal strips are crisscrossed from top view; wherein a length between two adjacent gate strips is twice as a length between two adjacent second metal strips, and a length of said one of the first metal strips is smaller than two and a half times as the length between two adjacent gate strips.

Abstract: A method of manufacturing a plurality of via structures includes providing an integrated circuit (IC) photo mask including via features and assist features positioned exclusively along alternating diagonal grid lines of a grid, aligning the IC photo mask with first metal segments of a first metal layer of a semiconductor substrate, the first metal segments having a first spacing corresponding to a first pitch of the grid, performing one or more photolithography processes including the IC photo mask, thereby defining via structure locations corresponding to the via features, and forming via structures at the defined via structure locations.

Abstract: In an embodiment, a set of texts associated with a domain is received. A set of hypothesis statements associated with the domain is received. A pre-trained natural language inference (NLI) model is applied on each of the received set of texts and on each of the received set of hypothesis statements. A second text corpus associated with the domain is generated. The generated second text corpus corresponds to a set of labels associated with the domain. A few-shot learning model is applied on the generated second text corpus to generate a third text corpus associated with the domain. The generated third text corpus is configured to fine-tune the applied pre-trained NLI model, and the fine-tuned NLI model is configured to label an input text associated with the domain. A display of the labelled input text on a display device is controlled.

Abstract: Disclosed embodiments herein relate to an integrated circuit including metal rails. In one aspect, the integrated circuit includes a first layer including a first metal rail and a second layer including a second metal rail, where the second layer is above the first layer along a first direction. In one aspect, the integrated circuit includes a third layer including an active region of a transistor, where the third layer is above the second layer along the first direction. In one aspect, the integrated circuit includes a fourth layer including a third metal rail, where the fourth layer is above the third layer along the first direction. In one aspect, the integrated circuit includes a fifth layer including a fourth metal rail, where the fifth layer is above the fourth layer along the first direction.

Abstract: A semiconductor package structure includes a base having a first surface and a second surface opposite thereto, wherein the base comprises a wiring structure, a first electronic component disposed over the first surface of the base and electrically coupled to the wiring structure, a second electronic component disposed over the first surface of the base and electrically coupled to the wiring structure, wherein the first electronic component and the second electronic component are separated by a molding material, a first hole and a second hole formed on the second surface of the base, and a frame disposed over the first surface of the base, wherein the frame surrounds the first electronic component and the second electronic component.

Abstract: A display panel, a gate drive circuit and a driving method thereof. The gate drive circuit includes drive units. A first cascaded input end OUT(n?1) of a first shift register (100) of each of the drive units is connected to a different start signal end STV; a plurality of drive units in the drive units include a reset control sub-circuit (9), where the reset control sub-circuit (9) is connected with a second cascaded input end OUT(n+1) of a last shift register (100) and one or more start signal ends STV, and is configured to control an electric potential of the second cascaded input end OUT(n?1) according to an electric potential of the one or more start signal ends STV.

Abstract: A compound is provided as having a structure of Formula I: where X1 and X2 are each independently a nitrogen atom or a C—R group, C is a carbon atom, R is a hydrogen atom, a deuterium atom, a halogen atom, or a cyano group, CR, and at least one of X1 and X2 is N; L1, L2, and L3 are each independently a single bond, a substituted or unsubstituted aryl group, or substituted or unsubstituted aryl heteroaryl group; and Ar1, Ar2 are each independently a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group.

Abstract: A first and second semiconductor device are bonded together using a bonding contact pad embedded within a bonding dielectric layer of the first semiconductor device and at least one bonding via embedded within a bonding dielectric layer of the second semiconductor device. The bonding contact pad extends a first dimension in a first direction perpendicular to the major surface of the first semiconductor device and a second dimension in a second direction parallel to the plane of the first semiconductor wafer, the second dimension being at least twice the first dimension. The bonding via extends a third dimension in the first direction and a fourth dimension in the second direction, the third dimension being at least twice the first dimension. The bonding contact pad and bonding via may be at least partially embedded in respective bonding dielectric layers in respective topmost dielectric layers of respective stacked interconnect layers.

Abstract: Disclosed is a crack detection apparatus for detecting a building structure, belonging to the technical field of building detection and including a main shaft collar, an auxiliary shaft collar, a rotating drum, a bracket assembly, a crawling mechanism and a transmission assembly, where the main shaft collar is rotationally connected with the auxiliary shaft collar, main slewing arms and auxiliary slewing arms that are in X-shaped crossing are arranged on the main shaft collar and the auxiliary shaft collar, the rotating drum swinging back and forth is rotationally assembled on the main shaft collar, a tail end of the rotating drum is provided with a cleaning arm, the crawling mechanism is assembled at tail ends of the main slewing arms and the auxiliary slewing arms and connected with the rotating drum through the transmission assembly.

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor is of a first type in a first layer and includes a gate extending in a first direction and a first active region extending in a second direction perpendicular to the first direction. The second transistor is of a second type arranged in a second layer over the first layer and includes the gate and a second active region extending in the second direction. The semiconductor device further includes a first conductive line in a third layer between the first and second layers. The first conductive line electrically connects a first source/drain region of the first active region to a second source/drain region of the second active region. The gate comprises an intermediate portion disposed between the first active region and the second active region, wherein the first conductive line crosses the gate at the intermediate portion.

Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: A method of machine learning algorithm selection may include obtaining a dataset that includes multiple data entries. In some embodiments, each of the data entries may include multiple features and one of the multiple features may be designated as a target variable. The method may further include selecting a subset of the data entries. In some embodiments, selecting the subset of the data entries may include binning the data entries into multiple data bins based on values in the target variable and selecting a subset of the binned data entries from each of the multiple data bins as the subset of the data entries. The method may further include constructing multiple machine learning models using the subset of the data entries and selecting one of the multiple machine learning models based on an evaluation of the multiple machine learning models.

Abstract: The present invention is related to a novel positive electrode active material for lithium-ion battery. The positive electrode active material is expressed by the following formula: Li1.2NixMn0.8-x-yZnyO2, wherein x and y satisfy 0<x?0.8 and 0<y?0.1. In addition, the present invention provides a method of manufacturing the positive electrode active material. The present invention further provides a lithium-ion battery which uses said positive electrode active material.

Abstract: An IC structure includes a transistor, a source/drain contact, a metal oxide layer, a non-metal oxide layer, a barrier structure, and a via. The transistor includes a gate structure and source/drain regions on opposite sides of the gate structure. The source/drain contact is over one of the source/drain regions. The metal oxide layer is over the source/drain contact. The non-metal oxide layer is over the metal oxide layer. The barrier structure is over the source/drain contact. The barrier structure forms a first interface with the metal oxide layer and a second interface with the non-metal oxide layer, and the second interface is laterally offset from the first interface. The via extends through the non-metal oxide layer to the barrier structure.

Abstract: Disclosed are a special tooling and method for electron beam welding of a cavity body and a beam tube of a superconducting niobium cavity. The special tooling includes a first clamping device for fixing a flange and a second clamping device for fixing a semi-cavity body, wherein the first clamping device and the second clamping device are fixedly connected. A pressing ring of the first clamping device is disposed around a beam tube of a superconducting niobium cavity and cooperates with a base plate to clamp and fix the flange. The second clamping device includes clamping arms evenly distributed along a circumference of the semi-cavity body, and each clamping arm includes a second pressing plate axially disposed along the beam tube and a pressing block that is disposed on an end portion of the second pressing plate and fixes an edge of the semi-cavity body.

Abstract: A plasma-facing component of a fusion reactor divertor, including an inner target transition support and a dome transition support which are integrated into an inner target-dome transition support. The inner target-dome transition support and an outer horizontal target transition support are each prepared from two materials. The channel connection inside the inner target-dome transition support and the outer horizontal target transition support is realized through an S-shaped flow channel and a collector box. In V-shaped regions of inner and outer targets, a plasma-facing unit is connected to the collector box in the transition support via a bending tube, and is communicated with a coolant flowing through horizontal and vertical targets through an intermediate flow channel in the transition block. A method of preparing the plasma-facing component is further provided.

Abstract: An integrated circuit includes conductive rails that are disposed in a first conductive layer and separated from each other in a layout view, signal rails disposed in a second conductive layer different from the first conductive layer, at least one first via coupling a first signal rail of the signal rails to at least one of the conductive rails, and at least one first conductive segment. The first signal rail transmits a supply signal through the at least one first via and the at least one of the conductive rails to at least one element of the integrated circuit. The at least one first via and the at least one first conductive segment are disposed above first conductive layer. The at least one first conductive segment is coupled to the at least one of the conductive rails and is separate from the first signal rail.

Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: The present invention relates to a macro plastic and micro plastic detection method based on RGB and hyperspectral image fusion, which includes the following steps: obtaining macro plastics and micro plastics; mixing with solid wastes to obtain a solid-phase substrate; pretreating the obtained solid-phase substrate to obtain a material; drying to remove part of moisture and coating on a quartz window sheet, drying until the moisture is completely removed, and flattening by using another quartz window sheet to obtain a material to be detected; obtaining an RGB image and a hyperspectral image of the material to be detected respectively by using a high-resolution color image scanner and a hyperspectral camera; fusing the obtained RGB image and hyperspectral image; and automatically classifying and identifying the macro plastics and the micro plastics by using a supervised classification model.