Patents by Inventor Wei Yang

Wei Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240153824
    Abstract: A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate under the recess is covered at least by a bottommost sacrificial layer of the stack. The method also includes forming inner spacers on terminal ends of the sacrificial layers that are above the bottommost sacrificial layer, depositing an undoped layer in the recess, and forming a doped epitaxial feature over the undoped layer. The undoped layer covers terminal ends of a bottommost channel layer of the stack. The doped epitaxial feature covers terminal ends of the channel layers that are above the bottommost channel layer.
    Type: Application
    Filed: March 22, 2023
    Publication date: May 9, 2024
    Inventors: Ting-Yeh CHEN, Wei-Yang LEE, Po-Cheng WANG, De-Fang CHEN, Chao-Cheng CHEN
  • Publication number: 20240155604
    Abstract: Apparatuses and methods for dynamic indications for partial uplink skipping are described. An apparatus is configured to transmit UCI including an indication for partial uplink skipping on a PUSCH at a time based on a transmission offset from the PUSCH, and transmit the partial uplink skipping on the PUSCH. An apparatus is configured to receive a CG for a PUSCH, rate match or puncture UCI that includes an indication for a partial uplink skipping of the CG, where the UCI is rate-matched across or punctured based on a configured or defined level of RBs, and transmit the UCI. An apparatus is configured to receive UCI including an indication for partial uplink skipping on a PUSCH at a time based on a transmission offset from the PUSCH, and receive the partial uplink skipping on the PUSCH.
    Type: Application
    Filed: October 20, 2023
    Publication date: May 9, 2024
    Inventors: Diana MAAMARI, Ahmed ELSHAFIE, Jing SUN, Huilin XU, Kianoush HOSSEINI, Wei YANG
  • Publication number: 20240155629
    Abstract: Methods, systems, and devices for wireless communications are described. Wireless communications systems may employ one or more scheduling constraints to support efficient utilization of techniques for intra-device handling of overlapping scheduled uplink transmissions (e.g., intra-device dynamic resource cancelation and multiplexing) as well as inter-device handling of overlapping scheduled uplink transmissions (e.g., inter-device dynamic resource cancelation and multiplexing). Scheduling constraints may define how a device may apply intra-device and inter-device multiplexing and cancelation rules for various scenarios. For example, a device may apply intra-UE cancelation rules before inter-device cancelation rules. In some examples, later-received grants or uplink preemption indications (ULPIs) may not change a device's previously established decision to drop an uplink transmission.
    Type: Application
    Filed: January 16, 2024
    Publication date: May 9, 2024
    Inventors: Wei YANG, Kianoush HOSSEINI, Peter GAAL, Wanshi CHEN, Yi HUANG
  • Publication number: 20240155876
    Abstract: Disclosed are a display substrate and a method for manufacturing same, and a display apparatus.
    Type: Application
    Filed: November 8, 2022
    Publication date: May 9, 2024
    Inventors: Lei DENG, Yue WEI, Guoqiang YANG, Wei CUI, Xu YANG, Tinghua SHANG, Yi ZHANG, Tingliang LIU, Huijuan YANG, Huiyang YU, Wei ZHANG, Xiaoliang GUO
  • Publication number: 20240153849
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a chip structure including a substrate and a wiring structure over a first surface of the substrate. The semiconductor device structure includes a first seed layer over the wiring structure, a first inner wall of the first enlarged portion, and a second inner wall of the neck portion. The semiconductor device structure includes a second seed layer over a second surface of the substrate, a third inner wall of the second enlarged portion, and the first seed layer over the second inner wall of the neck portion. The second seed layer is in direct contact with the first seed layer.
    Type: Application
    Filed: January 2, 2024
    Publication date: May 9, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li YANG, Wen-Hsiung LU, Lung-Kai MAO, Fu-Wei LIU, Mirng-Ji LII
  • Publication number: 20240155582
    Abstract: A user equipment (UE) can operate in an unlicensed network for sidelink (SL) communications to generate SL transmission with multiple RB sets to include physical resource blocks (PRBs) in an intra-cell guard band between two adjacent RB sets that are associated with a first RB set or a second RB set. PRBs of the intra-cell guard band can belong to the first RB set with a lower frequency than the intra-cell guard band or belong to a second RB set with a higher frequency than the intra-cell guard band.
    Type: Application
    Filed: October 4, 2023
    Publication date: May 9, 2024
    Inventors: Chunxuan Ye, Huaning Niu, Sigen Ye, Hong He, Oghenekome Oteri, Wei Zeng, Dawei Zhang, Ankit Bhamri, Haitong Sun, Weidong Yang
  • Publication number: 20240155605
    Abstract: This disclosure relates to techniques for performing partial frequency domain transmissions in a wireless communication system. A wireless device and a cellular base station may establish a wireless link. The wireless device may receive an uplink grant from the cellular base station. The uplink grant may provide a set of time domain resources and a set of frequency domain resources on which to perform an uplink transmission. The wireless device may select a subset of frequency domain resources from the set of frequency domain resources and perform the uplink transmission using the selected resources.
    Type: Application
    Filed: October 26, 2023
    Publication date: May 9, 2024
    Inventors: Weidong Yang, Dawei Zhang, Wei Zeng, Chunxuan Ye, Seyed Ali Akbar Fakoorian, Ankit Bhamri, Huaning Niu, Oghenekome Oteri, Hong He
  • Publication number: 20240153993
    Abstract: Semiconductor devices and methods of fabrication are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin and into a substrate as an initial step in forming a source/drain region. A first semiconductor material is epitaxially grown from channels exposed along sidewalls of the opening to form first source/drain structures. A second semiconductor material is epitaxially grown from the first semiconductor material to form a second source/drain structure over and to fill a space between the first source/drain structures. A bottom of the second source/drain structure is located below a bottommost surface of the first source/drain structures. The second semiconductor material has a greater concentration percentage by volume of germanium than the first semiconductor material. A stack of nanostructures is formed by removing sacrificial layers of the multilayer stack, the second semiconductor material being electrically coupled to the nanostructures.
    Type: Application
    Filed: January 17, 2024
    Publication date: May 9, 2024
    Inventors: Yen-Ting Chen, Po-Shao Lin, Wei-Yang Lee
  • Publication number: 20240153949
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip (IC). The method includes forming a first fin of semiconductor material and a second fin of semiconductor material within a semiconductor substrate. A gate structure is formed over the first fin and source/drain regions are formed on or within the first fin. The source/drain regions are formed on opposite sides of the gate structure. One or more pick-up regions are formed on or within the second fin. The source/drain regions respectively have a first width measured along a first direction parallel to a long axis of the first fin and the one or more pick-up regions respectively have a second width measured along the first direction. The second width is larger than the first width.
    Type: Application
    Filed: January 4, 2024
    Publication date: May 9, 2024
    Inventors: Hsin-Wen Su, Lien Jung Hung, Ping-Wei Wang, Wen-Chun Keng, Chih-Chuan Yang, Shih-Hao Lin
  • Publication number: 20240151757
    Abstract: A method for achieving terminal-pair definition of four-terminal-pair (4TP) impedance and an application thereof are provided, which belongs to the field of precision measurement and metrology. A current output terminal of a two-stage follower is connected to a high current terminal of impedance through a coaxial line, and a voltage output terminal of the two-stage follower is connected to a high voltage terminal of the impedance through the coaxial line, which makes current of the high voltage terminal be 0, and core wire currents and outer wire currents of the high current terminal equal and reverse. The terminal-pair definition of the 4TP impedance can be satisfied; and the follower is added to make a bridge ratio variable and isolate effects of bridge load changes, thereby accelerating a balancing speed of the 4TP impedance bridge, and achieving accurate and fast comparative measurement having high precision of the 4TP AC impedance.
    Type: Application
    Filed: November 6, 2023
    Publication date: May 9, 2024
    Inventors: Yan YANG, Lu Huang, Dongxue Dai, Wei WANG, Xia LIU
  • Publication number: 20240155679
    Abstract: A user equipment (UE), a base station (e.g., next generation NodeB (gNB)), or other network component can operate to configure multiple transmission reception point (mTRP) communication for new radio (NR) unlicensed (NR-U) standalone communications in a network. A processor or processing circuitry can acquire or share a channel occupancy time (COT) for a first transmission reception point (TRP). The COT can then be mediated with a UE or a second TRP via an ideal backhaul or an ideal backhaul based on a proximity condition. The COT can be shared between the first and second TRP via X2 signaling over an X2 interface.
    Type: Application
    Filed: June 7, 2021
    Publication date: May 9, 2024
    Inventors: Huaning Niu, Dawei Zhang, Wei Zeng, Haitong Sun, Yushu Zhang, Hong He, Oghenekome Oteri, Weidong Yang, Seyed Ali Akbar Fakoorian, Sigen Ye, Chunxuan Ye
  • Publication number: 20240155602
    Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a network node, configuration information for a configured grant, the configuration information indicating one or more uplink transmission precoding parameters for the configured grant. The UE may transmit, to the network node, an indication of a change to at least one uplink transmission precoding parameter of the one or more uplink transmission precoding parameters for the configured grant. The UE may transmit, to the network node, an uplink transmission in a configured grant occasion associated with the configured grant with the at least one uplink transmission precoding parameter based at least in part on the indication of the change to the at least one uplink transmission precoding parameter. Numerous other aspects are described.
    Type: Application
    Filed: November 3, 2022
    Publication date: May 9, 2024
    Inventors: Diana MAAMARI, Ahmed ELSHAFIE, Wei YANG, Huilin XU
  • Publication number: 20240155809
    Abstract: A two-phase immersion-type heat dissipation structure having fins for facilitating bubble generation is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the plurality of fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins and the fin surface have an included angle therebetween that is from 80 degrees to 100 degrees. A center line average roughness (Ra) of the side surface is less than 3 ?m, and a ten-point average roughness (Rz) of the side surface is not less than 12 ?m.
    Type: Application
    Filed: November 6, 2022
    Publication date: May 9, 2024
    Inventors: CHUN-TE WU, CHING-MING YANG, YU-WEI CHIU, TZE-YANG YEH
  • Publication number: 20240155573
    Abstract: This disclosure relates to techniques for selecting time domain resources in a wireless communication system. A wireless device and a cellular base station may establish a wireless link. The wireless device may receive an uplink grant that provides multiple uplink transmission occasions. The wireless device may select a subset of the multiple uplink transmission occasions and may perform uplink transmissions during the selected subset. The subset selected by the wireless device may be determined based on a resource adjustment rule for the wireless device. Each of the uplink transmissions may include an indication of uplink transmission occasions that are unused by the wireless device.
    Type: Application
    Filed: October 27, 2023
    Publication date: May 9, 2024
    Inventors: Weidong Yang, Dawei Zhang, Wei Zeng, Haitong Sun, Hong He, Sigen Ye, Ankit Bhamri, Oghenekome Oteri
  • Publication number: 20240155808
    Abstract: A two-phase immersion-cooling heat-dissipation composite structure is provided. The heat-dissipation composite structure includes a heat dissipation base, a plurality of high-thermal-conductivity fins, and at least one high-porosity solid structure. The heat dissipation base has a first surface and a second surface that face away from each other. The second surface of the heat dissipation base is in contact with a heating element immersed in a two-phase coolant. The first surface of the heat dissipation base is connected to the high-thermal-conductivity fins. The at least one high-porosity solid structure is located at the first surface of the heat dissipation base, and is connected and alternately arranged between side walls of two adjacent ones of the high-thermal-conductivity fins. Each of the high-porosity solid structure includes a plurality of closed holes and a plurality of open holes.
    Type: Application
    Filed: November 4, 2022
    Publication date: May 9, 2024
    Inventors: CHUN-TE WU, CHING-MING YANG, YU-WEI CHIU, TZE-YANG YEH
  • Publication number: 20240154015
    Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.
    Type: Application
    Filed: March 22, 2023
    Publication date: May 9, 2024
    Inventors: Jui-Lin CHEN, Hsin-Wen SU, Chih-Ching WANG, Chen-Ming LEE, Chung-I YANG, Yi-Feng TING, Jon-Hsu HO, Lien-Jung HUNG, Ping-Wei WANG
  • Publication number: 20240151877
    Abstract: An optical film layer and a manufacturing method thereof, a polarizer, and a display panel are provided. The optical film layer includes a base layer and a group of particle layers arranged in the base layer. The group of particle layers includes multiple particle layers, and refractive indices of the multiple particle layers gradually decrease in a direction from a first side of the optical film layer to a second side of the optical film layer.
    Type: Application
    Filed: April 1, 2022
    Publication date: May 9, 2024
    Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Gang Liu, Weiheng Yang, Wei Wang
  • Publication number: 20240154709
    Abstract: Aspects are described for a user equipment (UE) comprising a transceiver configured to enable wireless communication with a base station, and a processor communicatively coupled to the transceiver. The processor is configured to receive a configuration message from the base station, wherein the configuration message indicates a model identifications (ID) and one or more signals and measure the one or more signals to generate a data set corresponding to the model ID. The processor is further configured to train a first artificial intelligence (AI) model corresponding to the model ID using the data set; generate a second data set corresponding the model ID; and transmit the second data set and the model ID to the base station. The second data set is used to train a second AI model corresponding to the model ID.
    Type: Application
    Filed: October 10, 2023
    Publication date: May 9, 2024
    Applicant: Apple Inc.
    Inventors: Huaning NIU, Wei ZENG, Dawei ZHANG, Ankit BHAMRI, Hong HE, Sigen YE, Oghenekome OTERI, Weidong YANG, Haitong SUN
  • Publication number: 20240155807
    Abstract: A two-phase immersion-type heat dissipation structure having acute-angle notched structures is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins has first and second surfaces defined thereon and connected to each other. An angle between the first surface and the fin surface is from 80 degrees to 100 degrees, and an angle between the second surface and the fin surface is less than 75 degrees.
    Type: Application
    Filed: November 4, 2022
    Publication date: May 9, 2024
    Inventors: CHUN-TE WU, CHING-MING YANG, YU-WEI CHIU, TZE-YANG YEH
  • Patent number: 11978270
    Abstract: An AI-assisted automatic labeling system and a method thereof are disclosed. The method comprises steps: selecting images from microscopic images as candidate images, using a pre-labeling module to automatically label cells in the candidate images, and dividing the labeled images into training data and verification data; using a training module and the training data to train a basic model; using a verification module to verify and modify the basic model, wherein the verification module respectively verifies at least one cell area and at least one background area of the verification data to converge the basic model and form an automatic labeling model; using the automatic labeling model to automatically label cells in redundant images of the microscopic images. The basic model trained by the present invention can use few labeled images to perform regressive training and verification and then automatically labels the redundant images accurately and efficiently.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: May 7, 2024
    Assignee: V5med Inc.
    Inventors: Tzu-Kuei Shen, Chien Ting Yang, Guang-Hao Suen, Linda Siana, Liang-Wei Sheu