Abstract: The present application provides a valve annulus contraction surgical system with an adjustable annulus contracting force at a single point, and relates to the technical field of medical devices. The system includes a plurality of anchors, an implantation device, a plurality of groups of locking sutures and a suture locking device. A suture locking tab is arranged on at least one of two sides of each of the anchors. The implantation device is configured to implant the anchors into a valve annulus; each group of locking sutures includes a first locking suture and a second locking suture for connection with the suture locking tab. The suture locking device is configured to lock and fix the other end of the first locking suture and the other end of the second locking suture. In the present application, a valve orifice can be completely covered by a valve, thereby ensuring a therapeutic effect.

Abstract: An iron-core linear motor forcer (100) with integrated aerostatic bearing guidance is disclosed. The motor forcer (100) comprises (i) an iron-core (10) enclosed within an enclosure (13) having an upper surface (11) and a bottom surface (12), wherein the iron-core (10) is mounted with a plurality of coil windings (16), and a plurality of air supply channels (50) are provided substantially in vertical from the upper surface (11) to the bottom surface (12) of the enclosure (13), and each of the air supply channels (50) is terminated at the bottom surface (12) with one or more orifices (32); and (ii) a linear motor stator (20) having a stator surface (22). The iron-core linear motor forcer (100) is frictionless moving on the motor stator (20).

Abstract: Methods, systems, and devices for wireless communications are described. In some examples, a transmitting device may generate a parity check matrix based on performing a lifting operation on a base matrix. Each column of the base matrix may correspond to a different variable node and each row may correspond to a different check node. The transmitting device may then generate a set of coded bits based on the parity check matrix and each coded bit of the set of coded bits may be associated with a respective variable node. Further, the transmitting device may interleave the set of coded bits such that subsets of the set of coded bits associated with a same variable node are mapped to a same channel reliability level and transmit the set of coded bits according to the interleaving.

Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.

Abstract: Apparatus and methods are provided for port selection codebook configuration. A user equipment (UE) may receive, from a base station, an indication of parameter settings of a port selection codebook. The port selection codebook includes a port selection matrix W1, a combinational coefficient matrix W2, and a frequency basis selection matrix Wf. Based at least in part on the parameter settings, the UE selects L CSI-RS ports, Mv frequency basis from a window of N consecutive frequency basis; and up to beta*L*Mv entries per layer, where beta is a percentage of the L*Mv entries per layer. The UE reports one or more of the port selection matrix W1, the up to beta*L*Mv entries in the combinational coefficient matrix W2 per layer, and the frequency basis selection matrix Wf to the base station.

Abstract: A method of providing continuous user authentication for resource access control includes launching a continuous authentication service at a boot time of a first device, wherein the first device includes a processor, a memory, and one or more sensors configured to collect authentication information. Additionally, the method includes receiving authentication information comprising one or more of explicit authentication information or implicit authentication information, and receiving a request for access to a resource of the first device. Further, the method includes the operations of determining, by the continuous authentication service, a current value of a security state, the current value of the security state based in part on a time interval between a receipt time of the authentication information and a current time and controlling access to the resource based on the current value of the security state.

Abstract: A cell transmits synchronization signal blocks (SSB) to a user equipment (UE) for the UE to synchronize with the cell. The cell configures a discovery reference signal (DRS) window for synchronization signal block (SSB) transmission to a user equipment (UE), determines that a channel in an unlicensed spectrum is not occupied and transmits multiple SSBs to the UE in response to determining that the channel in the unlicensed spectrum is not occupied.

Abstract: Systems and methods provide channel state information (CSI) measurement based on measuring a demodulation reference signal (DMRS) for a physical downlink shared channel (PDSCH) transmission. A UE may determine the DMRS for the PDSCH transmission with frequency hopping, and measure the DMRS for the PDSCH transmission to determine a CSI measurement. The UE may then report the CSI measurement to a base station.

Abstract: This disclosure relates to techniques for selecting time domain resources in a wireless communication system. A wireless device and a cellular base station may establish a wireless link. The wireless device may receive an uplink grant that provides multiple uplink transmission occasions. The wireless device may select a subset of the multiple uplink transmission occasions and may perform uplink transmissions during the selected subset. The subset selected by the wireless device may be determined based on a resource adjustment rule for the wireless device. Each of the uplink transmissions may include an indication of uplink transmission occasions that are unused by the wireless device.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: Methods, systems, and devices for wireless communications are described. Wireless communications systems may employ one or more scheduling constraints to support efficient utilization of techniques for intra-device handling of overlapping scheduled uplink transmissions (e.g., intra-device dynamic resource cancelation and multiplexing) as well as inter-device handling of overlapping scheduled uplink transmissions (e.g., inter-device dynamic resource cancelation and multiplexing). Scheduling constraints may define how a device may apply intra-device and inter-device multiplexing and cancelation rules for various scenarios. For example, a device may apply intra-UE cancelation rules before inter-device cancelation rules. In some examples, later-received grants or uplink preemption indications (ULPIs) may not change a device's previously established decision to drop an uplink transmission.

Abstract: An optical film layer and a manufacturing method thereof, a polarizer, and a display panel are provided. The optical film layer includes a base layer and a group of particle layers arranged in the base layer. The group of particle layers includes multiple particle layers, and refractive indices of the multiple particle layers gradually decrease in a direction from a first side of the optical film layer to a second side of the optical film layer.

Abstract: This disclosure relates to techniques for performing partial frequency domain transmissions in a wireless communication system. A wireless device and a cellular base station may establish a wireless link. The wireless device may receive an uplink grant from the cellular base station. The uplink grant may provide a set of time domain resources and a set of frequency domain resources on which to perform an uplink transmission. The wireless device may select a subset of frequency domain resources from the set of frequency domain resources and perform the uplink transmission using the selected resources.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip (IC). The method includes forming a first fin of semiconductor material and a second fin of semiconductor material within a semiconductor substrate. A gate structure is formed over the first fin and source/drain regions are formed on or within the first fin. The source/drain regions are formed on opposite sides of the gate structure. One or more pick-up regions are formed on or within the second fin. The source/drain regions respectively have a first width measured along a first direction parallel to a long axis of the first fin and the one or more pick-up regions respectively have a second width measured along the first direction. The second width is larger than the first width.

Abstract: A user equipment (UE), a base station (e.g., next generation NodeB (gNB)), or other network component can operate to configure multiple transmission reception point (mTRP) communication for new radio (NR) unlicensed (NR-U) standalone communications in a network. A processor or processing circuitry can acquire or share a channel occupancy time (COT) for a first transmission reception point (TRP). The COT can then be mediated with a UE or a second TRP via an ideal backhaul or an ideal backhaul based on a proximity condition. The COT can be shared between the first and second TRP via X2 signaling over an X2 interface.

Abstract: A two-phase immersion-type heat dissipation structure having acute-angle notched structures is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins has first and second surfaces defined thereon and connected to each other. An angle between the first surface and the fin surface is from 80 degrees to 100 degrees, and an angle between the second surface and the fin surface is less than 75 degrees.

Abstract: A two-phase immersion-cooling heat-dissipation composite structure is provided. The heat-dissipation composite structure includes a heat dissipation base, a plurality of high-thermal-conductivity fins, and at least one high-porosity solid structure. The heat dissipation base has a first surface and a second surface that face away from each other. The second surface of the heat dissipation base is in contact with a heating element immersed in a two-phase coolant. The first surface of the heat dissipation base is connected to the high-thermal-conductivity fins. The at least one high-porosity solid structure is located at the first surface of the heat dissipation base, and is connected and alternately arranged between side walls of two adjacent ones of the high-thermal-conductivity fins. Each of the high-porosity solid structure includes a plurality of closed holes and a plurality of open holes.

Abstract: A two-phase immersion-type heat dissipation structure having fins for facilitating bubble generation is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the plurality of fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins and the fin surface have an included angle therebetween that is from 80 degrees to 100 degrees. A center line average roughness (Ra) of the side surface is less than 3 ?m, and a ten-point average roughness (Rz) of the side surface is not less than 12 ?m.

Abstract: A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate under the recess is covered at least by a bottommost sacrificial layer of the stack. The method also includes forming inner spacers on terminal ends of the sacrificial layers that are above the bottommost sacrificial layer, depositing an undoped layer in the recess, and forming a doped epitaxial feature over the undoped layer. The undoped layer covers terminal ends of a bottommost channel layer of the stack. The doped epitaxial feature covers terminal ends of the channel layers that are above the bottommost channel layer.

Abstract: Semiconductor devices and methods of fabrication are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin and into a substrate as an initial step in forming a source/drain region. A first semiconductor material is epitaxially grown from channels exposed along sidewalls of the opening to form first source/drain structures. A second semiconductor material is epitaxially grown from the first semiconductor material to form a second source/drain structure over and to fill a space between the first source/drain structures. A bottom of the second source/drain structure is located below a bottommost surface of the first source/drain structures. The second semiconductor material has a greater concentration percentage by volume of germanium than the first semiconductor material. A stack of nanostructures is formed by removing sacrificial layers of the multilayer stack, the second semiconductor material being electrically coupled to the nanostructures.