Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: The present invention discloses a reagent set for detecting interactions between biomolecules and their regulatory factors and applications. One reagent set disclosed in the present invention consists of three reagents named A, B and C; the reagent A is formed by connecting a biomolecule R and a biomolecule X; the reagent B contains a biomolecule L; there is an interaction between the biomolecule R and the biomolecule L, and a phase transition occurs when the biomolecule R and the biomolecule L interact; the reagent C is formed by connecting a reporter group JIA with a biomolecule named XL.

Abstract: An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: A light-emitting device includes a semiconductor substrate, a surface-emitting semiconductor light source on the semiconductor substrate, a monolithic first dielectric, and a second dielectric. The monolithic first dielectric is transparent to light emitted by the light source and includes first and second micro-lenses adjacent an aperture of the light source and having axes parallel to and offset from an axis of a beam of light emitted by the light source, and a saddle-shaped lens over the aperture of the light source. The saddle-shaped lens connects the first and second micro-lenses and reshapes the beam of light emitted by the light source to have a high aspect ratio. The second dielectric is transparent to light emitted by the light source and encapsulates a light emission surface of the saddle-shaped lens. The second dielectric has a higher refractive index than the monolithic first dielectric.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: A current limiting circuit for controlling current from a power supply to a load having a capacitance includes an inductor, a transistor coupled in a current path with the inductor, and a control circuit. The transistor includes a control terminal. The control circuit is coupled to sense a voltage across the inductor and coupled to the control terminal of the transistor. The control circuit is configured to turn off the transistor when the voltage across the inductor is greater than a threshold to restrict current from a power supply, and turn on the transistor when a defined parameter is met to allow current from the power supply to charge the load capacitance. Other example current limiting circuits are also disclosed.

Abstract: A light-emitting device includes a semiconductor substrate, a surface-emitting semiconductor light source on the semiconductor substrate, a monolithic first dielectric, and a second dielectric. The monolithic first dielectric is transparent to light emitted by the light source and includes first and second micro-lenses adjacent an aperture of the light source and having axes parallel to and offset from an axis of a beam of light emitted by the light source, and a saddle-shaped lens over the aperture of the light source. The saddle-shaped lens connects the first and second micro-lenses and reshapes the beam of light emitted by the light source to have a high aspect ratio. The second dielectric is transparent to light emitted by the light source and encapsulates a light emission surface of the saddle-shaped lens. The second dielectric has a higher refractive index than the monolithic first dielectric.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

Abstract: A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: A bumper for a vehicle armrest assembly includes a base that extends from a first end to a second end. The base includes a front surface. The bumper includes a stop that extends from the front surface of the base. The bumper also includes a cushion that extends from the front surface of the base. The cushion extends a greater distance from the base than the stop.

Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

Abstract: The disclosure discloses an application of an HSM (Heat Self Molding) process in wing molding and a wing molding method. Specific application steps include: cutting a core-type thermal expansion compound, a cladding-type thermal expansion compound and a fiber pre-preg fabric according to the shape and dimensions of a wing; cladding the core-type thermal expansion compound with the cladding-type thermal expansion compound, then cladding the fiber pre-preg fabric on the cladding-type thermal expansion compound; placing a pre-formed product in a wing die, closing a die cover, and heating the die, wherein a thermal expansion HSM compound is molded by the effect of a heating program while the fiber pre-preg fabric is cured at a high temperature, and then wing molding is completed; cooling the die, opening the die, and taking out the wing. A light and smooth wing product with high strength and a streamlined shape is obtained.

Abstract: The disclosure discloses a thermal expansion compound for handles, a preparation method, and applications thereof. The thermal expansion compound for handles is prepared by 20-80 wt of thermosetting resin, 5-50 wt of foaming agent, 5-50 wt of stuffing, and 0-60 wt of diluent. The thermal expansion compound for handles applies to the preparation of various sports instruments such as tennis rackets, badminton rackets, squash rackets, PK rackets, beach rackets, flexible rackets, ball bats and clubs. Handles prepared from the thermal expansion compound have an elegant appearance and a good hand feel, avoid secondary expansion during 100-160° C. post-heating treatment, and have a hardness of SHORE D 60-95.