Abstract: A sensor arrangement for measuring a displacement of a proof mass using a tunneling current includes a proof mass body suspended by micro-mechanical beams to permit a mass body movement, at least one integrated electrode tip arranged to be integrated with the proof mass body, and at least one external electrode tip arranged externally to the proof mass body and suspended by micro-mechanical beams to permit an external electrode movement, the at least one external electrode tip further arranged to be in a close proximity to the at least one integrated electrode tip to permit a flow of the tunneling current between the at least one external electrode tip and the at least one integrated electrode tip, in which the displacement of the proof mass causes a change in the tunneling current.

Abstract: A device for levitating a disk including three bottom electrodes situated below the disk and equidistantly around a top circle and three top electrodes situated above the disk, opposite the three bottom electrodes, and situated equidistantly around a bottom circle. Two bottom reference electrodes are situated below the disk, a first bottom reference electrode forming a bottom inner circle on a bottom inner perimeter of the set of three bottom electrodes, a second bottom reference electrode forming a bottom outer circle on a bottom outer perimeter of the set of three bottom electrodes. Two top reference electrodes are situated above the disk, a first top reference electrode forming a top inner circle on a top inner perimeter of the set of three top electrodes, a second top reference electrode forming a top outer circle on a top outer perimeter of the set of three top electrodes.

Abstract: A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one mechanical functional element, which is characterized by a surface barrier layer, with which the functional layer begins on the sacrificial layer, and which has a different state from the remaining functional layer, is also removed at least to a considerable part, or, on the functional layer, one layer or a plurality of layers having at least approximately the same properties with respect to stress in the layer or layers such as the surface barrier layer is (are) applied. Additionally, a micromechanical structure having a functional layer in which the functional layer is constructed in such a way that the stresses are neutralized or no stress gradient appears.

Abstract: A process for manufacturing a membrane sensor over a silicon substrate, preferably a thermal membrane sensor. A thin layer of silicon carbide or silicon nitride is deposited over an area of porous silicon formed in the surface of the substrate, and then openings that extend as far as the layer of porous silicon are formed in the silicon carbide or silicon nitride layer via a dry etching process. Next, semiconductor structures and conductor path structures are implanted into the upper surface of the membrane layer via lithographic steps, and then the sacrificial layer of porous silicon is removed using a suitable solvent such as ammonia. Thus an empty space that thermally isolates the sensor membrane from the substrate is created beneath the membrane layer.

Abstract: A method for manufacturing a micromechanical part, having a plurality of components that move with respect to one another, from a substrate, with a conductive coating being applied to at least one facing surface of the plurality of components that move with respect to one another.

Abstract: A method for manufacturing a semiconductor device includes the steps of providing a substrate, depositing a monocrystalline sacrificial layer onto the substrate, depositing a monocrystalline function layer onto the sacrificial layer, and removing at least part of the sacrificial layer after the function layer depositing step.

Abstract: Methods of fabricating micromachined devices are disclosed, as are micromachined (MEMS) devices fabricated using such methods. According to one embodiment, the method includes forming a composite thin film layer stack on a substrate such that composite thin film layer stack comprises a plurality of etch-resistant layers, directionally etching a first portion of the composite thin film layer stack selectively masked by a first etch-resistant layer thereof, and directionally etching a first portion of the substrate selectively masked by the first etch-resistant layer. These steps may result in the formation of a composite thin film microstructure.

Abstract: A device for levitating a disk including three bottom electrodes situated below the disk and equidistantly around a top circle and three top electrodes situated above the disk, opposite the three bottom electrodes, and situated equidistantly around a bottom circle. Two bottom reference electrodes are situated below the disk, a first bottom reference electrode forming a bottom inner circle on a bottom inner perimeter of the set of three bottom electrodes, a second bottom reference electrode forming a bottom outer circle on a bottom outer perimeter of the set of three bottom electrodes. Two top reference electrodes are situated above the disk, a first top reference electrode forming a top inner circle on a top inner perimeter of the set of three top electrodes, a second top reference electrode forming a top outer circle on a top outer perimeter of the set of three top electrodes.

Abstract: A method for producing a microsystem that has, situated on a substrate, a first functional layer that includes a conductive area and a sublayer. Situated on the first functional layer is a second mechanical functional layer, which is first initially applied onto a sacrificial layer situated and structured on the first functional layer. In addition, a layer is situated on the side of the sublayer facing away from the conductive area. The layer constitutes a protective layer on the first functional layer that acts in areas during a sacrificial layer etching process so that during removal of the sacrificial layer no etching of the areas of the first functional layer covered by the protective layer occurs, and that in the region of the areas of the first functional layer implemented without the protective layer the sublayer is removed essentially selectively to the conductive area at the same time as the sacrificial layer.

Abstract: An arrangement for a micro-mechanical beam includes a support structure to provide an increase in bending stiffness of the micro-mechanical beam without significantly influencing torsional stiffness, where the support structure is configured to directly attach to the micro-mechanical beam.

Abstract: A sensor arrangement for measuring a displacement of a proof mass using a tunneling current includes a proof mass body suspended by micro-mechanical beams to permit a mass body movement, at least one integrated electrode tip arranged to be integrated with the proof mass body, and at least one external electrode tip arranged externally to the proof mass body and suspended by micro-mechanical beams to permit an external electrode movement, the at least one external electrode tip further arranged to be in a close proximity to the at least one integrated electrode tip to permit a flow of the tunneling current between the at least one external electrode tip and the at least one integrated electrode tip, in which the displacement of the proof mass causes a change in the tunneling current.

Abstract: An apparatus is described to reduce a play occurring in a micro-mechanical gear arrangement, the apparatus having a moveable hub coupled to a gear of the micro-mechanical gear arrangement, the moveable hub configured to permit a movement of the gear that reduces the play. A push rod is coupled to the moveable hub and at least one buckling beam is tethered to the push rod so that a force is exerted upon the push rod to cause the movement of the gear, the force being transferable to the gear via the moveable hub.

Abstract: A strong-acid cation exchange resin in acid form is contacted with an alkylcarhamoyl alkylthioester in the presence of water for producing a strong-acid cation exchange resin comprising a plurality of acid groups being partially neutralized with a mercaptoalkylamine. The produced partially neutralized cation exchange resin is useful as a catalyst in a process of producing a bisphienol by reaction of a phenolic compound with a carhonyl compound.

Abstract: A method is described for producing surface micromechanical structures having a high aspect ratio, a sacrificial layer (20) being provided between a substrate (30) and a function layer (10), trenches (60, 61) being provided by a plasma etching process in the function layer (10), at least some of these trenches exposing surface regions (21, 22) of the sacrificial layer (20).

Abstract: The module (10) described is in particular a wafer module, and has two oppositely situated functional elements (11, 12) which are functionally interconnected by a compression-deformable joining agent layer (13) located in between. At least one functional element (11; 12; 11, 12) is surface-structured to form a recess (14), and the functional connection is present exclusively in the region of the recess (14).

Abstract: An electrochemical etching cell (1) is proposed for etching an etching body (15) made at least superficially of an etching material. The etching cell (1) has at least one chamber filled with an electrolyte, and is provided with a first electrode (13), which at least superficially has a first electrode material, and with a second electrode (13′) which at least superficially has a second electrode material. Furthermore, the etching body (15) is in contact, at least region-wise, with the electrolyte. In this context, the first electrode material and the second electrode material are selected such that, after the etching, the etching body (15) is not contaminated and/or is not impaired in its properties by the electrode materials. In particular, the electrode materials are the same materials as the etching material. Also proposed is a method for etching an etching body (15) using this etching cell (1), the first and/or the second electrode (13, 13′) being used as a sacrificial electrode.

Abstract: A method for manufacturing a semiconductor device includes the steps of providing a substrate, depositing a monocrystalline sacrificial layer onto the substrate, depositing a monocrystalline function layer onto the sacrificial layer, and removing at least part of the sacrificial layer after the function layer depositing step.

Abstract: A method for removing layers or layer systems from a substrate and subsequent application onto an alternative substrate. A porous breakaway layer is formed by anodization in hydrofluoric acid. Optionally, a stabilizing layer with lower porosity is previously produced on top of the breakaway layer. The oxide of the porous breakaway layer or the stabilizing layer is removed by brief contact with HF, and an epitaxial layer is applied on the porous breakaway layer or the stabilizing layer. The epitaxial layer or the layer system is then removed from the substrate, and the epitaxial layer or the layer system is applied onto an alternative substrate. Optionally, the stabilizing layer and/or residues of the breakaway layer are removed from the epitaxial layer.

Abstract: A vibrating microdevice, such as a vibrating micromirror, includes a vibrating structure which is connected to a supporting body via at least one spring structure in an at least a largely floating manner, the spring structure including at least one torsion-spring element defining a torsion axis and permitting a torsional vibration about the torsion axis to be induced in the vibrating structure, the spring structure also including at least one converter structure, which at least partially converts forces acting at least largely perpendicularly to the torsion axis on the torsion spring element into forces acting at least partially parallelly to the torsion axis on the torsion-spring element.

Abstract: A sensor, in particular thermal sensor, having a silicon element and a largely self-supporting membrane layer equipped with at least one sensor element, is proposed. The membrane layer is furthermore spaced away from the silicon element by way of at least one contact column and is at least largely supported thereby. The contact column moreover makes electrical contact to the sensor element. Also proposed is a method for manufacturing a largely self-supporting membrane, a polymer layer first being deposited on a base element, patterned, and equipped with at least one cutout. The cutout is subsequently filled with a filler material, and a membrane layer is applied onto the polymer layer. Lastly, the polymer layer is removed again. The proposed method for manufacturing a largely self-supporting membrane layer is suitable in particular for constructing a sensor, in particular a thermal sensor or a thermal sensor array.