Abstract: A flip-flop circuit includes a charge injection module, a sense amp module, and a latch module. The charge injection module is configured to, in response to a clock signal, selectively provide electrical charge from a power supply to a first node. The sense amp module is configured to adjust a voltage of a second node in response to detecting a voltage of the first node crossing a threshold while the charge injection module is providing the electrical charge to the first node. The latch module is configured to in response to the clock signal, store a value based on a voltage of the second node. The latch module is also configured to provide the value as an output of the flip-flop circuit.

Abstract: The present invention provides a method and system for improving memory testing efficiency, raising the speed of memory testing, detecting memory failures occurring at the memory operating frequency, and reducing data reported for redundancy repair analysis. The memory testing system includes a first memory tester extracting failed memory location information from the memory at a higher memory operating frequency, an external memory tester receiving failed memory location information at a lower memory tester frequency, and an interface between the first memory tester and the external memory tester. The memory testing method uses data strobes at the memory tester frequency to clock out failed memory location information obtained at the higher memory operating frequency. In addition, the inventive method reports only enough information to the external memory tester for it to determine row, column and single bit failures repairable with the available redundant resources.

Abstract: In one embodiment, the present disclosure includes a circuit comprising an amplifier having an input and an output, an offset detection circuit to detect an offset of the amplifier at the output of the amplifier, and an offset generation circuit having an input coupled to the offset detection circuit and an output coupled to the input of the amplifier to generate an offset at the input of the amplifier during an operational phase of the amplifier based on the detected offset. The generated offset cancels a least a portion of the offset of the amplifier. In one implementation, the amplifier is a sense amplifier in a memory.

Abstract: A multiport memory architecture, systems including the same and methods for using the same. The architecture generally includes (a) a memory array; (b) a plurality of ports configured to receive and/or transmit data; and (c) a plurality of port buffers, each of which is configured to transmit the data to and/or receive the data from one or more of the ports, and all of which are configured to (i) transmit the data to the memory array on a first common bus and (ii) receive the data from the memory array on a second common bus. The systems generally include those that embody one or more of the inventive concepts disclosed herein. The methods generally relate to writing blocks of data to, reading blocks of data from, and/or transferring blocks of data across a memory.

Abstract: A memory system including a memory array, and a read write/module. The memory includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells, in which each memory cell is formed at a corresponding intersection of a bit line and a word line in the memory array. The read/write module is configured to control activation of at least two memory cells in the memory array during a read operation or a write operation, wherein the at least two memory cells activated by the read/write module are located on a different word line and a different bit line in the memory array, and wherein each memory cell coupled to a same bit line of the plurality of bit lines is configured to be written to or read from based on selection of the bit line.

Abstract: A memory system including a memory array, and a read write/module. The memory includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells, in which each memory cell is formed at a corresponding intersection of a bit line and a word line in the memory array. The read/write module is configured to control activation of at least two memory cells in the memory array during a read operation or a write operation, wherein the at least two memory cells activated by the read/write module are located on a different word line and a different bit line in the memory array, and wherein each memory cell coupled to a same bit line of the plurality of bit lines is configured to be written to or read from based on selection of the bit line.

Abstract: Aspects of the disclosure provide a circuit, such as an integrated circuit. The circuit includes a first circuit and a second circuit. The second circuit includes a delay circuit configured to cause the second circuit to have substantially matched delay characteristics of the first circuit in response to at least one parameter change of manufacturing, environmental and operational parameters, such as process variation, temperature variation, and supply voltage variation.

Abstract: A flip-flop circuit includes a charge injection module, a sense amp module, and a latch module. The charge injection module is configured to, in response to a clock signal, selectively provide electrical charge from a power supply to a first node. The sense amp module is configured to adjust a voltage of a second node in response to detecting a voltage of the first node crossing a threshold while the charge injection module is providing the electrical charge to the first node. The latch module is configured to in response to the clock signal, store a value based on a voltage of the second node. The latch module is also configured to provide the value as an output of the flip-flop circuit.

Abstract: A memory system including a memory array, and a read write/module. The memory includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells, in which each memory cell is formed at a corresponding intersection of a bit line and a word line in the memory array. The read/write module is configured to control activation of at least two memory cells in the memory array during a read operation or a write operation, wherein the at least two memory cells activated by the read/write module are located on a different word line and a different bit line in the memory array, and wherein each memory cell coupled to a same bit line of the plurality of bit lines is configured to be written to or read from based on selection of the bit line.

Abstract: Embodiments of the present invention provide a method that includes providing a substrate including an emitter layer comprising a plurality of emitters, each emitter defining an axis, forming a heater layer above the emitter layer, and forming a phase change memory (PCM) cell layer above the heater layer. The method also includes forming a top contact layer above the PCM cell layer. The top contact layer comprises a plurality of top contacts, where each top contact is located between two axes. Other embodiments are also described.

Abstract: A memory system includes Q memory blocks that each include M memory sub-blocks. The memory system also includes Q word line decoders that each are associated with a different one of the Q memory blocks. The memory system also includes a bit line decoder and Q×M switch modules. Each Q×M switch module selectively controls access to up to J of the M memory sub-blocks of the Q memory blocks. The Q word line decoders and the bit line decoder access less than M memory sub-blocks in at least two of the Q memory blocks during one of a read and write operation. M and Q are integers greater than 1, and J is an integer greater than or equal to 1.

Abstract: Methods for patterning high-density features are described herein. Embodiments of the present invention provide a method comprising patterning a first subset of a pattern, the first subset configured to form a plurality of lines over the substrate, and patterning a second subset of the pattern, the second subset configured to form a plurality of islands over the substrate, wherein said patterning the first subset and said patterning the second subset comprise at least two separate patterning operations.

Abstract: Embodiments of the present invention provide a method that includes providing a wafer including multiple cells, each cell including at least one emitter, and performing a lithographic operation on the wafer. The lithographic operation comprises forming heater trenches adjacent the emitters, each heater trench having a width that extends over at least respective portions of two cells. Other embodiments are also described.

Abstract: In one embodiment, the present disclosure includes a circuit comprising an amplifier having an input and an output, an offset detection circuit to detect an offset of the amplifier at the output of the amplifier, and an offset generation circuit having an input coupled to the offset detection circuit and an output coupled to the input of the amplifier to generate an offset at the input of the amplifier during an operational phase of the amplifier based on the detected offset. The generated offset cancels a least a portion of the offset of the amplifier. In one implementation, the amplifier is a sense amplifier in a memory.

Abstract: The present invention provides a method and system for improving memory testing efficiency, raising the speed of memory testing, detecting memory failures occurring at the memory operating frequency, and reducing data reported for redundancy repair analysis. The memory testing system includes a first memory tester extracting failed memory location information from the memory at a higher memory operating frequency, an external memory tester receiving failed memory location information at a lower memory tester frequency, and an interface between the first memory tester and the external memory tester. The memory testing method uses data strobes at the memory tester frequency to clock out failed memory location information obtained at the higher memory operating frequency. In addition, the inventive method reports only enough information to the external memory tester for it to determine row, column and single bit failures repairable with the available redundant resources.

Abstract: A memory comprising: a plurality of base layers including plurality of switches; a phase-change material layer; a bit line layer arranged between and coupled to the plurality of base layers and the phase-change material layer; a word line layer arranged between and coupled to the plurality of base layers and the phase-change material layer; and a voltage source layer comprising a plurality of independent voltage source segments, wherein the plurality of independent voltage source segments are in communication with the plurality of switches.

Abstract: Methods for forming a bipolar junction transistor device are described herein. A method for forming the bipolar junction transistor device may include doping a first portion of a substrate with a first dopant to form a base pick-up region, and after doping the first portion of the substrate, doping a second portion of the substrate with a second dopant to form at least one emitter region. A bipolar junction transistor device may include a floating collector, in which case the bipolar junction transistor device may be operated as a diode for improved emitter current.

Abstract: Methods and structures for interconnects in semiconductor devices are described. A method of forming a mask pattern for a metal layer in an interconnect can include searching a layout for a metal feature with a predetermined size and an interconnect layer aligned thereto, removing the metal feature from the layout to form a modified layout, and reforming the mask pattern using the modified layout. The metal interconnect may include a first pattern of metal lines, each having a minimum feature size in a layout view in no more than one dimension; a dielectric layer on or over the first pattern of metal lines, having a substantially planar horizontal upper surface; and vias or contacts in the dielectric layer, the vias or contacts contacting a top surface of the first pattern of metal lines and a top surface of silicon structures, vias, or contacts below the first pattern of metal lines.

Abstract: Circuits, architectures, a system and methods for memories with multiple power supplies and/or multiple low power modes. The circuit generally includes peripheral circuitry operating at a first voltage, a memory array operating at a second voltage, and translation circuitry configured to receive an input from the peripheral circuitry at the first voltage and provide an output to the memory array at the second voltage, the translation circuitry further configured to prevent leakage during a standard operating mode of the memory.

Abstract: Embodiments of the present invention provide a method that includes providing wafer including multiple cells, each cell including at least one emitter. The method further includes performing a lithographic operation in a word line direction of the wafer across the cells to form pre-heater element arrangements, performing a lithographic operation in a bit line direction of the wafer across the pre-heater element arrangements to form a pre-heater element adjacent each emitter, and performing a lithographic operation in the word line direction across a portion of the pre-heater elements to form a heater element adjacent each emitter. Other embodiments are also described.