Abstract: A heterojunction semiconductor device having a semiconductor body is provided. The semiconductor body includes a first semiconductor region comprising aluminum gallium nitride, a second semiconductor region comprising gallium nitride and forming a heterojunction with the first semiconductor region, an n-type third semiconductor region, a p-type fourth semiconductor region forming a first rectifying junction with the third semiconductor region, and an n-type seventh semiconductor region adjoining the heterojunction formed between the first semiconductor region and the second semiconductor region. The first rectifying junction forms a rectifying junction of a transistor structure which is in ohmic contact with the seventh semiconductor region. Further, a method for producing such a heterojunction semiconductor device is provided.

Abstract: A method for producing a component is disclosed. The method includes calculating a load line of the component as a result of a load to be absorbed by the component and applying a layer on a core by gas dynamic cold spraying, where the layer has a layer section and where the layer section runs along the calculated load line.

Abstract: A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.

Abstract: Disclosed is a method for repairing a receiving hook for guide vanes, wherein the receiving hook is arranged in a housing of a turbomachine. The method comprises removing first material in a region of the receiving hook, which region extends over the circumference of the housing and thereafter applying second material in or on a region which extends over the circumference of the housing. The application of second material is performed using localized heat.

Abstract: A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and having two side walls, and two second semiconductor regions of a second conductivity type arranged next to the semiconductor mesa. Each of the two second semiconductor regions forms a pn-junction at least with the drift layer. A rectifying junction is formed at least at one of the two side walls of the mesa. Further, a method for producing a heterojunction semiconductor device is provided.

Abstract: A heterojunction semiconductor device having a semiconductor body is provided. The semiconductor body includes a first semiconductor region comprising aluminum gallium nitride, a second semiconductor region comprising gallium nitride and forming a heterojunction with the first semiconductor region, an n-type third semiconductor region, a p-type fourth semiconductor region forming a first rectifying junction with the third semiconductor region, and an n-type seventh semiconductor region adjoining the heterojunction formed between the first semiconductor region and the second semiconductor region. The first rectifying junction forms a rectifying junction of a transistor structure which is in ohmic contact with the seventh semiconductor region. Further, a method for producing such a heterojunction semiconductor device is provided.

Abstract: A method of feeding a stud to a joining head including a stud shank clamp and operable to join the stud to a workpiece, and wherein the method of feeding the stud comprises the steps of providing a stud holding device including a securing sleeve and a plurality of collet arms; feeding the stud into the stud holding device to a first position wherein the flange is arranged above the free end of the plurality of arms and below the securing sleeve; and securing the stud in the first position by engaging the securing sleeve behind the flange.

Abstract: A heterojunction transistor including a semiconductor body is provided. The semiconductor body includes: a base region of a semiconductor material having a first band-gap, the base region being of a first conductivity type; a collector region of a semiconductor material having a second band-gap which is larger than the first band-gap by at least about 1 eV, the collector region being of a second conductivity type and forming a first heterojunction with the base region; and an emitter region of a semiconductor material having a third band-gap which is larger than the first band-gap by at least about 1 eV, the emitter region being of the second conductivity type and forming a second heterojunction with the base region. Further, a method for producing a heterojunction transistor is provided.

Abstract: The invention concerns a method for fastening a retainer of an airbag, in particular of a window bag, to a body of a motor vehicle. The method for fastening including the steps of: arranging the retainer on the body by inserting a hollow pin in a corresponding bodyshell opening; positioning a tool on the retainer; and pressing a pin into an opening of the hollow pin to radially expand the hollow pin, and thereby securing the hollow pin in the corresponding bodyshell opening.

Abstract: A method of manufacturing a semiconductor substrate includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, and forming, when seen in a cross-section perpendicular to the first surface, cavities in the semiconductor wafer at a first distance from the first surface. The cavities are laterally spaced from each other by partition walls formed by semiconductor material of the wafer. The cavities form a separation region. The method further includes forming a semiconductor layer on the first surface of the semiconductor wafer, and breaking at least some of the partition walls by applying mechanical impact to the partition walls to split the semiconductor wafer along the separation region.

Abstract: A method of feeding a stud to a joining head including a stud shank clamp and operable to join the stud to a workpiece, and wherein the method of feeding the stud comprises the steps of providing a stud holding device including a securing sleeve and a plurality of collet arms; feeding the stud into the stud holding device to a first position wherein the flange is arranged above the free end of the plurality of arms and below the securing sleeve; and securing the stud in the first position by engaging the securing sleeve behind the flange.

Abstract: According to an embodiment of a field-effect semiconductor device, the field-effect semiconductor device includes a semiconductor body and a source electrode. The semiconductor body includes a drift region, a gate region and a source region of a first semiconductor material having a first band-gap and an anode region of a second semiconductor material having a second band-gap lower than the first band-gap. The drift region is of a first conductivity type. The gate region forms a pn-junction with the drift region. The source region is of the first conductivity type and in resistive electric connection with the drift region and has a higher maximum doping concentration than the drift region. The anode region is of the second conductivity type, forms a heterojunction with the drift region and is spaced apart from the source region. The source metallization is in resistive electric connection with the source region and the anode region.

Abstract: A semiconductor die includes a substrate, a first device region and a second device region. The first device region includes an epitaxial layer on the substrate and one or more semiconductor devices of a first type formed in the epitaxial layer of the first device region. The second device region is spaced apart from the first device region and includes an epitaxial layer on the substrate and one or more semiconductor devices of a second type formed in the epitaxial layer of the second device region. The epitaxial layer of the first device region is different than the epitaxial layer of the second device region so that the one or more semiconductor devices of the first type are formed in a different epitaxial layer than the one or more semiconductor devices of the second type.

Abstract: In an embodiment, an apparatus includes a source region, a gate region and a drain region supported by a substrate, and a drift region including a plurality of vertically extending n-wells and p-wells to couple the gate region and the drain region of a transistor, wherein the plurality of n-wells and p-wells are formed in alternating longitudinal rows to form a superjunction drift region longitudinally extending between the gate region and the drain region of the transistor.

Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2,—the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.

Abstract: A welding stud including a head and a shank extending from the head. The shank has an end region opposite the head and the end region includes at least two angled surfaces which incline towards an axis of the shank in a direction moving away from the head.

Abstract: A holding device for holding a stud, which includes a radially projecting flange in a securing position, comprises a collet component including a hollow tubular insertion section defining an insertion axis, and a clamping section operable to exert a radially inwardly directed clamping force for clamping the stud. A securing device is arranged on the insertion section and includes a securing sleeve formed of plurality of separate securing-sleeve sections that are radially movable relative to one another. A clearance space is defined between a bottom end of the securing-sleeve sections and a top end of the clamping section, and the clearance space is operable for holding a flange of a stud in the securing position.

Abstract: In order to provide a method for isolating a circuit and a thermal link, wherein the link has a very low resistance and is suitable for high currents, in particular very high short load currents, and also has a high degree of reliability, in particular under difficult conditions, such as thermal and mechanical loading which lasts for a relatively long time, for example, the invention proposes that, during the phase transition of the material of the fusible element (10) from the solid to the liquid state, the volume of the fusible element (10) increases and the pressure increases and, owing to the increase in volume and the increase in pressure, the fusible element (10) is dislodged so as to break the electrical connection.

Abstract: A method for coating a plastic surface and a plastic component is disclosed. The method includes applying a base layer to a plastic surface. A layer of a coating is applied by kinetic cold gas spraying on the base layer. The base layer is applied by a method that is different from the kinetic cold gas spraying. The base layer adheres to the plastic surface and the layer of the coating applied by kinetic cold gas spraying is deposited on the base layer by the kinetic cold gas spraying.

Abstract: The invention relates to a component, which has a layer applied by gas dynamic cold spray, said layer having at, least one layer section or a reinforcing element, the material and orientation of which are selected according to a load line, and to a method for producing such a component by gas dynamic cold spray.