Abstract: A sensor device is provided for detecting thawing on surfaces with interdigital electrodes formed in a resistance layer which is formed on a substrate. In order to develop the sensor device further so that the measuring speed of the sensor device is further increased, the disclosure proposes that the interdigital electrodes and recesses between the interdigital electrodes have a moisture-sensitive hydrophilic surface through condensation cores applied to it.

Abstract: A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.

Abstract: A normally-off JFET is provided. The normally-off JFET includes a channel region of a first conductivity type, a floating semiconductor region of a second conductivity type adjoining the channel region, and a contact region of the first conductivity type adjoining the floating semiconductor region. The floating semiconductor region is arranged between the contact region and the channel region. Further, a normally-off semiconductor switch is provided.

Abstract: A fastening device for the airbag, in particular a window airbag, is provided, having a retainer to which the airbag can be fastened and that has an opening through which a mounting stud can be passed. Fastened to the retainer is a slide element that can be slid from an open position into a fastened position and the stud is captured in the opening by the slide in the fastened position.

Abstract: A sensor device is provided for detecting thawing on surfaces with interdigital electrodes formed in a resistance layer which is formed on a substrate. In order to develop the sensor device further so that the measuring speed of the sensor device is further increased, the disclosure proposes that the interdigital electrodes and recesses between the interdigital electrodes have a moisture-sensitive hydrophilic surface through condensation cores applied to it.

Abstract: A semiconductor die includes a substrate, a first device region and a second device region. The first device region includes an epitaxial layer on the substrate and one or more semiconductor devices of a first type formed in the epitaxial layer of the first device region. The second device region is spaced apart from the first device region and includes an epitaxial layer on the substrate and one or more semiconductor devices of a second type formed in the epitaxial layer of the second device region. The epitaxial layer of the first device region is different than the epitaxial layer of the second device region so that the one or more semiconductor devices of the first type are formed in a different epitaxial layer than the one or more semiconductor devices of the second type.

Abstract: A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency ? of less than 0.7.

Abstract: A normally-off power field-effect transistor semiconductor structure is provided. The structure includes a channel, a source electrode, a gate electrode and trapped charges which arranged between the gate electrode and the channel such that the channel is in an off-state when the source electrode and the gate electrode are on the same electric potential. Further, a method for forming a semiconductor device and a method for programming a power field effect transistor are provided.

Abstract: A fastener with a shank and, arranged at one end of the shank, a head intended for welding to a workpiece, has multiple detent pawls formed on the shank that extend radially outward from the shank toward the head and that are elastically resilient in the radially inward direction. On the outside, each detent pawl has an engagement recess with support surfaces. The shank has a longitudinal hole, in which is located a stud, wherein one end of the stud projects out of the longitudinal hole and forms the head for welding. Also formed on the shank is a flange that is elastically resilient in the axial direction, whose outermost edge region is located opposite the engagement recess of the detent pawls.

Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2, —the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.

Abstract: A semiconductor device is disclosed. One embodiment includes a trench within a semiconductor body and a gate insulating structure at opposing sidewalls within the trench. A gate electrode structure adjoins the gate insulating structure within the trench and a dielectric structure adjoins the gate electrode structure within the trench. The gate electrode structure is in contact with the semiconductor body at a bottom side of the trench and is electrically coupled to a drain zone over an element having a voltage blocking capability.

Abstract: A holding device for holding a stud, which includes a radially projecting flange in a securing position, comprises a collet component including a hollow tubular insertion section defining an insertion axis, and a clamping section operable to exert a radially inwardly directed clamping force for clamping the stud. A securing device is arranged on the insertion section and includes a securing sleeve formed of plurality of separate securing-sleeve sections that are radially movable relative to one another. A clearance space is defined between a bottom end of the securing-sleeve sections and a top end of the clamping section, and the clearance space is operable for holding a flange of a stud in the securing position.

Abstract: A threaded bolt may be produced according to a method including the steps of: forming a cylindrical bolt blank of metal with a root end and a head end, and with a section of the bolt blank adjoining the root end that is reduced in diameter up to a region designed for the formation of lead-in flights. Then, in a first rolling phase, partially form the principal thread flights and the lead-in thread flights using a first pass of flat jaws of a thread rolling machine. Then, in a second rolling phase, fully form the principal flights and the lead-in flights and forming grooves.

Abstract: A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer and the second dielectric layer are arranged between the semiconductor body zone and the first electrically conductive layer. A second electrically conductive layer is applied between the first dielectric layer and the second dielectric layer. A first voltage divider is switched between the first electrically conductive layer and the semiconductor body zone. The second electrically conductive layer is electrically conductively connected only to the voltage divider.

Abstract: Semiconductor component including a drift region and a drift control region. One embodiment provides a drift zone and a drift control zone. A drift control zone dielectric is arranged between the first drift zone and the drift control zone and has at least two sections arranged at a distance from one another in a current flow direction of the component. At least one separating structure is arranged between the drift zone and the drift control zone in the region of an interruption, defined by the at least two sections, of the drift control zone dielectric and has at least one PN junction.

Abstract: A semiconductor device is disclosed. One embodiment includes a trench within a semiconductor body and a gate insulating structure at opposing sidewalls within the trench. A gate electrode structure adjoins the gate insulating structure within the trench and a dielectric structure adjoins the gate electrode structure within the trench. The gate electrode structure is in contact with the semiconductor body at a bottom side of the trench and is electrically coupled to a drain zone over an element having a voltage blocking capability.

Abstract: A fastening device for the airbag, in particular a window airbag, is provided, having a retainer to which the airbag can be fastened and that has an opening through which a mounting stud can be passed. Fastened to the retainer is a slide element that can be slid from an open position into a fastened position and the stud is captured in the opening by the slide in the fastened position.

Abstract: The invention concerns a method for fastening a retainer of an airbag, in particular of a window bag, to a body of a motor vehicle. The method for fastening including the steps of: arranging the retainer on the body by inserting a hollow pin in a corresponding bodyshell opening; positioning a tool on the retainer; and pressing a pin into an opening of the hollow pin to radially expand the hollow pin, and thereby securing the hollow pin in the corresponding bodyshell opening.

Abstract: A method is specified for the operation of an automation device provided for the receiving of telegrams together with such an automation device, which is distinguished by the fact that the automation device manages a resource pool for telegrams which are arriving or received, that the automation device distinguishes between active and new communication relationships with a remote communication participant and that for each new communication relationship a free resource is selected from the resource pool and thereafter is used for this communication relationship, which thereby becomes an active communication relationship.

Abstract: An electronic circuit and a method for controlling a power field effect transistor. The electronic circuit includes a power field effect transistor having a semiconductor body, which has a drain zone, a drift zone, a source zone and a bulk zone. The power field effect transistor further includes a gate and a field plate. The field plate is placed adjacent to the drift zone and is isolated from the drift zone. A switch circuitry is provided for electrically connecting the field plate depending on the drain-source voltage such that the field plate is electrically connected to the drain zone, if |UDS|>UT, where UT is a predetermined voltage, and if |UDS|>UT, the field plate is connected to an electrode having an electrode-source voltage UES.