Abstract: A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.

Abstract: A description is given of a semiconductor component comprising a drift zone of a first conduction type and at least one Schottky metal zone arranged in the drift zone, and of a method for producing a semiconductor component.

Abstract: An electronic circuit and a method for controlling a power field effect transistor. The electronic circuit comprises a power field effect transistor having a semiconductor body, which has a drain zone, a drift zone, a source zone and a bulk zone. The power field effect transistor further comprises a gate and a field plate. The field plate is placed adjacent to the drift zone and is isolated from the drift zone. A switch circuitry is provided for electrically connecting the field plate depending on the drain-source voltage such that the field plate is electrically connected to the drain zone, if |UDS|>UT, where UT is a predetermined voltage, and if |UDS|>UT, the field plate is connected to an electrode having an electrode-source voltage UES.

Abstract: Establishing relationships between one or more entities of a first application and one or more entities of a second application using metadata. At least one entity of the second application is identified for establishing a relationship with at least one entity of the first application. Metadata from the second application is received at the first application. The metadata includes information associated with the identified entity of the second application. An expression is generated, based on the metadata, specifying a relationship between the entity of the first application with the identified entity of the second application.

Abstract: A sensor device is provided for detecting thawing on surfaces with interdigital electrodes formed in a resistance layer which is formed on a substrate. In order to develop the sensor device further so that the measuring speed of the sensor device is further increased, the disclosure proposes that the interdigital electrodes and recesses between the interdigital electrodes have a moisture-sensitive hydrophilic surface through condensation cores applied to it.

Abstract: An airbag installation fastener includes first and second fastener members connected by a hinge member. The first and second fastener members rotate from a fastener open condition to engage each other in a fastener closed position. The fastener closed position provides for an air bag member positioned between the first and second fastener members. The first and second fastener members have an aperture receiving a vehicle connected stud to support both the airbag installation fastener and the air bag member from the stud. An arm extending from the second fastener member rotates with respect to the second fastener member. The arm extends from the second fastener member in the fastener closed condition and both engages the second fastener member and abuts the stud to visually indicate a fastener completed installation condition.

Abstract: A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.

Abstract: A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction.

Abstract: A semiconductor device is disclosed. One embodiment provides a top surface. A first lateral semiconductor region is arranged adjacent to the top surface and includes a transistor structure. The transistor structure includes a drain zone of a first conductivity type. A second lateral semiconductor region is arranged below the first semiconductor region and includes a junction field-effect transistor structure. The junction field-effect transistor structure includes a source zone of the first conductivity type which is electrically connected to the drain zone of the transistor structure.

Abstract: A description is given of a semiconductor component comprising a drift zone of a first conduction type and at least one Schottky metal zone arranged in the drift zone, and of a method for producing a semiconductor component.

Abstract: A welding stud including a head and a shank extending from the head. The shank has an end region opposite the head and the end region includes at least two angled surfaces which incline towards an axis of the shank in a direction moving away from the head.

Abstract: Semiconductor component including a drift region and a drift control region. One embodiment provides a drift zone and a drift control zone. A drift control zone dielectric is arranged between the first drift zone and the drift control zone and has at least two sections arranged at a distance from one another in a current flow direction of the component. At least one separating structure is arranged between the drift zone and the drift control zone in the region of an interruption, defined by the at least two sections, of the drift control zone dielectric and has at least one PN junction.

Abstract: A fastener with a shank and, arranged at one end of the shank, a head intended for welding to a workpiece, has multiple detent pawls formed on the shank that extend radially outward from the shank toward the head and that are elastically resilient in the radially inward direction. On the outside, each detent pawl has an engagement recess with support surfaces. The shank has a longitudinal hole, in which is located a stud, wherein one end of the stud projects out of the longitudinal hole and forms the head for welding. Also formed on the shank is a flange that is elastically resilient in the axial direction, whose outermost edge region is located opposite the engagement recess of the detent pawls.

Abstract: A semiconductor device is disclosed. One embodiment provides a top surface. A first lateral semiconductor region is arranged adjacent to the top surface and includes a transistor structure. The transistor structure includes a drain zone of a first conductivity type. A second lateral semiconductor region is arranged below the first semiconductor region and includes a junction field-effect transistor structure. The junction field-effect transistor structure includes a source zone of the first conductivity type which is electrically connected to the drain zone of the transistor structure.

Abstract: A vertical trench transistor has a first electrode, a second electrode and also a semiconductor body arranged between the first and second electrodes, there being formed in the semiconductor body a plurality of transistor cells comprising source region, body region, drift region and gate electrode and also contact holes for making contact with the source and body regions, contact being made with the source and body regions by means of the first electrode, and at least the bottom of each contact hole adjoining at least one drift region, so that Schottky contacts between the first electrode and corresponding drift regions are formed at the bottoms of the contact holes. The dimensions and configurations of the body regions or of the body contact regions optionally arranged between body regions and contact holes are chosen in such a way as to avoid excessive increases in electric fields at the edges of the contact hole bottoms.

Abstract: A multilumen catheter that maximizes the blood flow into and out of the patient's vasculature while also providing for passive and/or active perfusion of tissue downstream of where the catheter resides in the vasculature. The inventive catheter comprises a proximal end, a first distal and a second distal end with first and second lumens extending from the proximal end to each of these distal ends to provide for blood circulation within one blood vessel or between two different blood vessels. The second lumen, and any additional lumens so desired, may be positioned coaxially with or radially around the first lumen. Redirecting means is provided at a distal end of at least one of said lumens for directing blood in a direction generally opposite of the direction of flow through said lumen.

Abstract: A threaded bolt having a shank of basic cylindrical form and with a root end and a head end is provided with a spiral-shaped external thread, which has at least one principal flight and in the vicinity of the root end has at least one lead-in flight, adjoined by the principal flight, where the lead-in flight has a lead-in surface which differs from the principal flight and is formed in order to come into crossing-free engagement with flights of a complementary internal thread of an element. The lead-in flight and the principal flight are interrupted by at least one groove, which extends in the longitudinal direction of the shank in order to form a free space for the accommodation of lacquer residues. The flights and the grooves are initially formed by rolling.

Abstract: In order to produce a cost-effective fuse (100) in chip design, which is applied to a carrier substrate (10) made of a Al2O3 ceramic having a high thermal conductivity, and which is provided with a fusible metallic conductor (13) and a cover layer (14), in which the melting point of the metallic conductor (13) may be defined reliably, it is suggested that an intermediate layer (11) having low thermal conductivity be positioned between the carrier substrate (10) and the metallic conductor (13), the intermediate layer (11) being formed by a low-melting-point inorganic glass paste applied in the screen-printing method or an organic intermediate layer (11) applied in island printing. Furthermore, a method for manufacturing the fuse (100) is specified.

Abstract: An extracardiac pumping for supplementing the circulation of blood, including the cardiac output, in a patient without any component thereof being connected to the patient's heart, and methods of using same. One embodiment of the intravascular extracardiac system comprises a pump with inflow and outflow conduits that are sized and configured to be implantable intravascularly through a non-primary vessel, whereby it may positioned where desired within the patient's vasculature. The system comprises a subcardiac pump that may be driven directly or electromagnetically from within or without the patient. The pump is configured to be operated continuously or in a pulsatile fashion, synchronous with the patient's heart, thereby potentially reducing the afterload of the heart.