Abstract: An electronic device includes a first electrode and a second electrode. The device also includes a resistive material between the first and second electrodes. An active material is between the first electrode and the resistive material. The active material is in electrical communication with the first electrode and the active material is in electrical communication with the second electrode through the resistive layer.

Abstract: A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.

Abstract: Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.

Abstract: A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area. Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode.

Abstract: A method of programming an electrical variable resistance memory device. When applied to variable resistance memory devices that incorporate a phase-change material as the active material, the method utilizes a plurality of crystalline programming states. The crystalline programming states are distinguishable on the basis of resistance, where the resistance values of the different states are stable with time and exhibit little or no drift. As a result, the programming scheme is particularly suited to multilevel memory applications. The crystalline programming states may be achieved by stabilizing crystalline phases that adopt different crystallographic structures or by stabilizing crystalline phases that include mixtures of two or more distinct crystallographic structures that vary in the relative proportions of the different crystallographic structures.

Abstract: An electronic device including a breakdown layer having variable thickness. The device includes a variable resistance material positioned between two electrodes. A breakdown layer is interposed between the variable resistance material and one of the electrodes. The breakdown layer has a non-uniform thickness, which serves to bias the breakdown event toward the thinner portions of the breakdown layer. As a result, the placement, size, and number of ruptures in the breakdown layer are more consistent over a series or array of devices. The variable resistance material may be a phase-change material. The variable-thickness breakdown layer may be formed through a diffusion process by introducing a gas containing a resistivity-enhancing species to the environment of segmented variable resistance devices during fabrication. The resistivity-enhancing element penetrates the outer perimeter of the variable resistance material and diffuses toward the interior of the device.

Abstract: An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first electrode and second electrode. A nonlinear electrode material is disposed between the first electrode and the second electrode. The nonlinear electrode material is electrically in series with the first electrode, the first active material, the second active material, and the second electrode. The first electrode and the first active material undergo no chemical or electrochemical reaction when current passes between the first electrode and the second electrode.

Abstract: A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.

Abstract: A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.

Abstract: A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.

Abstract: A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal states. Because these states are more stable, they are less prone to drift than the amorphous state conventionally utilized in phase change memories.

Abstract: A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area. Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode.

Abstract: A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.

Abstract: A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.

Abstract: A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.

Abstract: A method of programming a phase-change material. The method includes providing a transformation pulse to the phase-change material, where the transformation pulse includes a programming waveform and a conditioning waveform. The programming waveform provides sufficient energy to alter the structural state of the phase-change material. In one embodiment, the programming waveform alters the volume fractions of crystalline and amorphous phase regions within the phase-change material. The conditioning waveform provides sufficient energy to heat the phase-change material to a temperature above the ambient temperature but below the crystallization temperature of the phase-change material. The method programs the phase-change material to a state that exhibits a reduced time variation of resistance.

Abstract: A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal states. Because these states are more stable, they are less prone to drift than the amorphous state conventionally utilized in phase change memories.

Abstract: A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.

Abstract: An electrical device includes a composite switching material. The composite switching material includes an electrically switchable component and a non-switchable component. In one embodiment, the composite switching material includes a heterogeneous mixture of at least one chalcogenide material and at least one dielectric material. The composite switching material is disposed between two electrodes and the switchable component is transformable from a resistive state to a conductive state upon application of a voltage between the two electrodes, without changing phase.

Abstract: Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.