Abstract: An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.

Abstract: A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.

Abstract: An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be set to a specific starting or erased resistance value. The memory element includes resistive layers for controlling the distribution of electrical energy within the memory material, heating layers for transferring heat energy into the memory material, and thermal insulation layers for reducing the loss of heat energy from the memory material.

Abstract: A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.

Abstract: An acute matrix liquid crystal display panel including 1) a plurality of liquid crystal display elements distributed in a matrix of rows and columns; 2) means for supplying video signals and display element selection signals, including row and column conductors; and 3) a plurality of paired Ovonic threshold switches and resistive elements each serially coupled between the corresponding row or column conductor and the liquid crystal display element, the Ovonic threshold switches acting as display element selection devices and current isolation devices in which the Ovonic threshold switches having an off state resistance of at least 1.times.10.sup.9 ohms.

Abstract: An active matrix liquid crystal display panel including a plurality of Ovonic threshold switches each serially coupled between the corresponding row or column conductor and the liquid crystal display element. The Ovonic threshold switches act as display element selection devices and current isolation devices. The Ovonic switches have an off-state resistance of at least 1.times.10.sup.10 ohms.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory or control array based upon the novel switching characteristics provided by said unique class of semiconductor materials characterized by a large dynamic range of reversible Fermi level positions. The memory or control elements from which the array is fabricated exhibit orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory elements of the instant invention are in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic and/or electrode order, which configurations can be selectively and repeatably accessed by electric input signals of yawing energy level.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the single cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and increased write/erase cycle life. The structurally modified memory element includes an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon layer. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory elements of the instant invention are further characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energies.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.

Abstract: A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.

Abstract: An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.

Abstract: A semiconductor body includes ordered clusters of less then 100 angstroms in size and preferably, no more than 12 to 30 angstroms in size. The material is characterized by a decoupling of physical properties of the material from the morphology of the material.

Abstract: Disclosed is a method of testing ultra large area integrated circuits. The circuit has a plurality of individually addressable elements. The method comprises providing a dispersed chargeable powder with the integrated circuit in proximity to and above the powder. At least one device of the integrated circuit is electrically selected. An electrical potential is applied between the integrated circuit and the dispersed powder. The potential causes the chargeable particles to adhere to substantially only functional selected devices of the integrated circuit, thereby differentiating between functional and non-functional devices.

Abstract: Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of each may be substantially intrinsic or lightly doped. One or more control electrodes or gates located adjacent to each current path project a variable electric field over the ambipolar path, which modulates current by controlling the amount of charge carriers of both polarities injected into the semiconductor body. In most of the single gate embodiments, the electrodes extend across a portion, preferably a major portion such as 75% or 90%, or the length of the current path, but not the entire length of the current path. The embodiments having a plurality of gates typically have two insulated gates, one extending from the anode electrode and the other extending from the cathode electrode. The gates in a single device may overlap.

Abstract: Fully integrated thin film electronic arrays including thin film line driver circuits and address decoding circuits are disclosed. Each line driver employs a two terminal thin film threshold switching device of the type exhibiting a negative resistance characteristic for very high speed, high current operation. The line drivers are particularly useful when driving address lines or other switched conductors in arrays having large capacitive loads or current requirements. The address decoding circuits are constructed from an array of thin film diodes configured as a plurality of AND logic gates, with the output of each AND gate providing the trigger signal to turn on a line driver circuit associated with a particular address line. Thin film structures used to implement the fully integrated arrays include diodes and threshold switches arranged as high density vertical devices in the form of multilayer mesa structures.

Abstract: There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies.The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light.