Abstract: A layer jamming driving device is proposed, which includes an enclosure made of a variable material; and layer stacked structures having a plurality of layers stacked inside the enclosure, wherein the layer stacked structures can be coupled so as to be slidable and rotatable with respect to each other.

Abstract: Use of a NAND array architecture to realize a binary neural network (BNN) allows for matrix multiplication and accumulation to be performed within the memory array. A unit synapse for storing a weight of a BNN is stored in a pair of series connected memory cells. A binary input is applied as a pattern of voltage values on a pair of word lines connected to the unit synapse to perform the multiplication of the input with the weight by determining whether or not the unit synapse conducts. The results of such multiplications are determined by a sense amplifier, with the results accumulated by a counter. The arrangement can be extended to ternary inputs to realize a ternary-binary network (TBN) by adding a circuit to detect 0 input values and adjust the accumulated count accordingly.

Abstract: An innovative low-bit-width device may include a first digital-to-analog converter (DAC), a second DAC, a plurality of non-volatile memory (NVM) weight arrays, one or more analog-to-digital converters (ADCs), and a neural circuit. The first DAC is configured to convert a digital input signal into an analog input signal. The second DAC is configured to convert a digital previous hidden state (PHS) signal into an analog PHS signal. NVM weight arrays are configured to compute vector matrix multiplication (VMM) arrays based on the analog input signal and the analog PHS signal. The NVM weight arrays are coupled to the first DAC and the second DAC. The one or more ADCs are coupled to the plurality of NVM weight arrays and are configured to convert the VMM arrays into digital VMM values. The neural circuit is configured to process the digital VMM values into a new hidden state.

Abstract: Technology for reconfigurable input precision in-memory computing is disclosed herein. Reconfigurable input precision allows the bit resolution of input data to be changed to meet the requirements of in-memory computing operations. Voltage sources (that may include DACs) provide voltages that represent input data to memory cell nodes. The resolution of the voltage sources may be reconfigured to change the precision of the input data. In one parallel mode, the number of DACs in a DAC node is used to configure the resolution. In one serial mode, the number of cycles over which a DAC provides voltages is used to configure the resolution. The memory system may include relatively low resolution voltage sources, which avoids the need to have complex high resolution voltage sources (e.g., high resolution DACs). Lower resolution voltage sources can take up less area and/or use less power than higher resolution voltage sources.

Abstract: Certain aspects of the present disclosure provide a method for performing multimode inferencing, comprising: receiving machine learning model input data from a requestor; processing the machine learning model input data with a machine learning model using processing hardware at a first power level to generate first output data; selecting a second power level for the processing hardware based on comparing the first output data to a threshold value; processing the machine learning model input data with the machine learning model using the processing hardware at the second power level to generate second output data; and sending second output data to the requestor.

Abstract: Ternary content addressable memory (TCAM) circuits are provided herein. In one example implementation, a TCAM circuit can include a first spin-orbit torque (SOT) magnetic tunnel junction (MTJ) element having a pinned layer coupled to a first read transistor controlled by a first search line, and having a spin hall effect (SHE) layer coupled in a first configuration across complemented write inputs. The TCAM circuit can include a second SOT MTJ element having a pinned layer coupled to a second read transistor controlled by a second search line, and having a SHE layer coupled in a second configuration across the complemented write inputs. The TCAM circuit can include a bias transistor configured to provide a bias voltage to drain terminals of the first read transistor and the second read transistor, and a voltage keeper element that couples the drain terminals to a match indicator line.

Abstract: An apparatus is provided that includes a memory device including a plurality of sub-arrays, and a memory controller. The memory controller is configured to determine a value of a parameter of a corresponding write pulse for each bit of a word based on a relative importance of each bit, and write each bit of the word to a corresponding one of the plurality of sub-arrays using the corresponding write pulses.

Abstract: Apparatuses and techniques are described for reading crosspoint arrays of memory cells with high bandwidth and a relatively small page buffer. Multiple crosspoint arrays (XPAs) are read in parallel, with one memory cell per XPA being read, in a bank of XPAs. To reduce the read time, a row can be selected for the XPAs, after which memory cells in different columns are read, one column at a time, while the same row is selected. This avoids the need to transmit commands and a row address for re-selecting the row in each successive read operation. The XPAs may be ungrouped, or one XPA may be accessible at a time in a group. In one option, the XPAs are arranged in sets, either individually or in groups, and one set is accessible at a time.

Abstract: An illustrative embodiment disclosed herein is an apparatus including a non-volatile memory cell and multi-bit input circuitry that simultaneously receives a plurality of bits, receives a supply voltage, converts the plurality of bits and the supply voltage into a multiply voltage, and applies the multiply voltage to the non-volatile memory cell. The non-volatile memory cell may pass a memory cell current in response to the multiply voltage. A magnitude of the multiply voltage may represent a multiplier. The memory cell current may represent a product of the multiplier and a multiplicand stored in the non-volatile memory cell.

Abstract: Systems and methods for performing in-storage logic operations using one or more memory cell transistors and a programmable sense amplifier are described. The logic operations may comprise basic Boolean logic operations (e.g., OR and AND operations) or secondary Boolean logic operations (e.g., XOR and IMP operations). The one or more memory cell transistors may be used for storing user data during a first time period and then used for performing a logic operation during a second time period subsequent to the first time period. During the logic operation, a first memory cell transistor of the one or more memory cell transistors may be programmed with a threshold voltage that corresponds with a first input operand value and then a gate voltage bias may be applied to the first memory cell transistor during the logic operation that corresponds with a second input operand value.

Abstract: An innovative low-bit-width device may include a first digital-to-analog converter (DAC), a second DAC, a plurality of non-volatile memory (NVM) weight arrays, one or more analog-to-digital converters (ADCs), and a neural circuit. The first DAC is configured to convert a digital input signal into an analog input signal. The second DAC is configured to convert a digital previous hidden state (PHS) signal into an analog PHS signal. NVM weight arrays are configured to compute vector matrix multiplication (VMM) arrays based on the analog input signal and the analog PHS signal. The NVM weight arrays are coupled to the first DAC and the second DAC. The one or more ADCs are coupled to the plurality of NVM weight arrays and are configured to convert the VMM arrays into digital VMM values. The neural circuit is configured to process the digital VMM values into a new hidden state.

Abstract: Disclosed is system for automatically replacing a high-pressure gas tank, including: a high-pressure gas tank lift installed in a cabinet which is able to be elevated and including a die to load a high-pressure gas tank thereon; a high-pressure gas tank clamp clamping the high-pressure gas tank loaded on the die of the high-pressure gas tank lift to align the position of the high-pressure gas tank; a high-pressure gas tank connection unit removing an end cap from the high-pressure gas tank elevated by the high-pressure gas tank lift to automatically connect a connector holder to a gas injection nozzle and control the flow of gas; and control unit installed in the cabinet to control operation of the high-pressure gas tank connection unit, the high-pressure gas tank lift, and the high-pressure gas tank clamp.

Abstract: There is provided a probe pin for performing an electrical inspection between a contact pad of a test apparatus and a conductive ball of a semiconductor device, the probe pin including a cylinder-type bottom plunger connected to the contact pad and configured to slide vertically, a piston-type top plunger connected to the conductive ball and configured to slide vertically, and an outer spring configured to provide an elastic force between the bottom plunger and the top plunger. According to the configuration of the present invention, it is possible to perform a stable inspection process by using the outer spring despite pin miniaturization.

Abstract: Techniques are presented for performing in-memory matrix multiplication operations for binary input, binary weight valued convolution neural network (CNN) inferencing. The weights of a filter are stored in pairs of memory cells of a storage class memory device, such as a ReRAM or phase change memory based devices. To reduce current consumption, the binary valued filters are transformed into ternary valued filters by taking sums and differences of binary valued filter pairs. The zero valued weights of the transformed filters are stored as a pair of high resistance state memory cells, reducing current consumption during convolution. The results of the in-memory multiplications are pair-wise combined to compensate for the filter transformations. To compensate for zero valued weights, a zero weight register stores the number of zero weights along each bit line and is used to initialize counter values for accumulating the multiplication operations.

Abstract: Disclosed is a method for automatically replacing high-pressure gas barrels, in which when loading a high-pressure gas barrel is loaded on the lift of a cabinet so as to supply gas to the wafer production line in the semiconductor fabrication FAB process facility, at the time point of replacement of the high-pressure gas barrel, a used high-pressure gas barrel is separated from a connector holder and then a new high-pressure gas barrel is connected to the connector holder.

Abstract: Disclosed is an automatic alignment method of a high-pressure gas container in which a high-pressure gas container is loaded on a lift of a cabinet so as to supply a gas from a fabrication (FAB) process facility of a semiconductor to a wafer production line, and then, the high-pressure gas container loaded on the lift is raised, and an end cap of the high-pressure gas container and the center of a connector holder of a gas pipe are automatically aligned.

Abstract: Apparatuses and techniques are described for reading crosspoint arrays of memory cells with high bandwidth and a relatively small page buffer. Multiple crosspoint arrays (XPAs) are read in parallel, with one memory cell per XPA being read, in a bank of XPAs. To reduce the read time, a row can be selected for the XPAs, after which memory cells in different columns are read, one column at a time, while the same row is selected. This avoids the need to transmit commands and a row address for re-selecting the row in each successive read operation. The XPAs may be ungrouped, or one XPA may be accessible at a time in a group. In one option, the XPAs are arranged in sets, either individually or in groups, and one set is accessible at a time.

Abstract: Methods and apparatus are disclosed for implementing principal component analysis (PCA) within a non-volatile memory (NVM) die of solid state drive (SSD) to reduce the dimensionality of machine learning data before the data is transferred to other components of the SSD, such as to a data storage controller equipped with a machine learning engine. The machine learning data may include, for example, training images for training an image recognition system in which the SSD is installed. In some examples, the on-chip PCA components of the NVM die are configured as under-the-array or next-to-the-array components. In other examples, one or more arrays of the NVM die are configured as multiplication cores for performing PCA matrix multiplication. In still other aspects, multiple NVM dies are arranged in parallel, each with on-chip PCA components to permit parallel concurrent on-chip processing of machine learning data.

Abstract: A system and method include determining, by a memory controller associated with a memory device, a value of a parameter of a write pulse for a plurality of bits of a B-bit word to be stored in the memory device. The value of the parameter is based upon a relative importance of a bit position of the plurality of bits in the B-bit word to a performance of a machine learning or signal processing task involving the B-bit word, a fidelity metric, and a resource metric. The system and method also include writing each of the plurality of bits of the B-bit word in a different sub-array of the memory device using the write pulse generated based on the value of the parameter determined for a particular one of the plurality of bits.

Abstract: Disclosed is a device for automatically opening or closing a gas barrel valve. The device includes: a main plate installed so as to move up and down and to align the position of a gas barrel loaded in a cabinet; a gas barrel connecting portion installed on the lower portion of the main plate, separating an end cap from the gas barrel and storing the end cap, and then automatically screw-coupling a connector holder to a gas spray nozzle; a valve handle unit installed on the main plate so as to rotate around a first shaft and rotating a valve handle of the gas barrel such that the valve handle is locked or unlocked, while encompassing the valve handle of the gas barrel; and a valve handle opening or closing unit installed on the upper portion of the main plate so as to operate the valve handle unit in a direction, in which a valve of the gas barrel is opened.