Abstract: Disclosed is a micro electro mechanical system (MEMS) microphone including: a substrate; an acoustic chamber formed by processing the substrate; a lower electrode formed on the acoustic chamber and fixed to the substrate; a diaphragm formed over the lower electrode so as to be spaced apart from the lower electrode by a predetermined interval; and a diaphragm discharge hole formed at a central portion of the diaphragm. According to an exemplary embodiment of the present disclosure, attenuation generated by an air layer between the diaphragm and the lower electrode in a MEMS microphone may be effectively reduced, thereby making it possible to obtain high sensitivity characteristics and reduce a time and a cost required for removing a sacrificial layer between the diaphragm and the lower electrode.

Abstract: Disclosed is a security monitoring method determining whether a trespasser is detected and a position of the trespasser in a set security space and monitoring sound generated at the position of the trespasser by using an acoustic image generated from acoustic signals generated by an acoustic generating device and an acoustic measuring device in an array type. An exemplary embodiment of the present disclosure provides a security monitoring system including: an acoustic generating device that generates acoustic signals; a plurality of acoustic measuring devices that receive the acoustic signals; and an acoustic image processing device that generates an acoustic image using a beamforming algorithm from the acoustic signals received in the plurality of acoustic measuring devices and determines a position of a trespasser by comparing the acoustic image after the trespasser is detected with the acoustic image before the trespasser is detected.

Abstract: Provided is an acoustic sensor. The acoustic sensor includes: a substrate including sidewall portions and a bottom portion extending from a bottom of the sidewall portions; a lower electrode fixed at the substrate and including a concave portion and a convex portion, the concave portion including a first hole on a middle region of the bottom, the convex portion including a second hole on an edge region of the bottom; diaphragms facing the concave portion of the lower electrode, with a vibration space therebetween; diaphragm supporters provided on the lower electrode at a side of the diaphragm and having a top surface having the same height as the diaphragm; and an acoustic chamber provided in a space between the bottom portion and the sidewall portions below the lower electrode.

Abstract: A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

Abstract: A nonlinear optical device is provided. More specifically, a wavelength conversion device package with less optical loss stabilizes optical alignment under an external environmental change, for example, in a temperature variation by providing a temperature regulating block and a temperature sensor to an optical oscillator and a wavelength modulator and fixing a flexible optical transmitter to the optical oscillator and the wavelength modulator. The wavelength conversion device package includes an optical oscillator comprising a light source for emitting a light; a flexible optical transmitter for transferring the light emitted from the optical oscillator to a wavelength modulator; and the wavelength modulator for receiving the light from the optical transmitter and radiating a wavelength-modulated light.

Abstract: An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.

Abstract: Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.

Abstract: In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.

Abstract: A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

Abstract: In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.

Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

Abstract: The present invention relates to a fabrication method for a quasi-phase-matched waveguide. The method includes the steps of forming a metal etch mask on a ferroelectric single crystal substrate, etching the substrate by using the etch mask, removing the etch mask, forming conductive layers on the etched substrate, forming polarization regions by applying an electric field to the conductive layers, and flattening the substrate after removing the conductive layers. Accordingly, the present invention is advantageous in that it can be applied to various fields employing a ferroelectric substrate, such as LiNbO3, LiTaO3, Mg:LiNbO3 or Zn:LiNbO3, it can obtain more accurate and uniform periodic domain inversion devices with a high quality and can fabricate devices that are cheaper and have a better performance.

Abstract: An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.

Abstract: Provided are a bolometer structure, an infrared detection pixel employing the bolometer structure, and a method of fabricating the infrared detection pixel.

Abstract: Provided is a micro-mechanical structure and method for manufacturing the same, including a hydrophilic surface on at least a part of a surface of the micro-mechanical structure, so as to prevent generation of an adhesion phenomenon in the process of removing a sacrificial layer to release the micro-mechanical, wherein the sacrificial layer comes into contact with the surface of the micro-mechanical structure.

Abstract: Provided are resistive materials for a microbolometer, a method for preparation of resistive materials and a microbolometer containing the resistive materials. The resistive materials for the microbolometer include an alloy of silicon and antimony or an alloy of silicon, antimony and germanium, which has a high TCR and a low resistance.

Abstract: A nonlinear optical device is provided. More specifically, a wavelength conversion device package with less optical loss stabilizes optical alignment under an external environmental change, for example, in a temperature variation by providing a temperature regulating block and a temperature sensor to an optical oscillator and a wavelength modulator and fixing a flexible optical transmitter to the optical oscillator and the wavelength modulator. The wavelength conversion device package includes an optical oscillator comprising a light source for emitting a light; a flexible optical transmitter for transferring the light emitted from the optical oscillator to a wavelength modulator; and the wavelength modulator for receiving the light from the optical transmitter and radiating a wavelength-modulated light.

Abstract: Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.

Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

Abstract: Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.