Abstract: Methods and systems for in situ process control, monitoring, optimization and fabrication of devices and components on semiconductor and related material substrates includes a light illumination system and electrical probe circuitry. The light illumination system may include a light source and detectors to measure optical properties of the in situ substrate while the electrical probe circuitry causes one or more process steps due to applied levels of voltage or current signals. The electrical probe circuitry may measure changes in electrical properties of the substrate due to the light illumination, the applied voltages and/or currents or other processes. The in situ process may be controlled on the basis of the optical and electrical measurements.

Abstract: Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a peak power, a pulse width and is modulated to a selected duty cycle to provide a selected energy per pulse and average power to the sample surface. The focused laser beam is scanned over the sample surface to provide controlled process effects limited to the area of the beam diameter and along the scanning path. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the focused beam diameter. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Systems and techniques for improved spectroscopy. In some embodiments, mechanical and/or optical zoom mechanisms may be provided for monochromator systems. For example, movable detector systems allow a detector to be positioned with respect to a dispersive element in order to obtain a first resolution. The detector systems may then allow the detector to be positioned with respect to a dispersive element to obtain a second different resolution. In some embodiments, spectroscopy of a first sample region may be performed using a plurality of excitation wavelengths. Multiple detectors may be positioned to receive light associated with different ones of the plurality of excitation wavelengths.

Abstract: A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 ?m, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, grain growth in the copper is enhanced.

Abstract: A system for processing semiconductor wafers, includes a plurality of front opening unified pods (FOUPs), loadlocks for receiving the plurality of wafers, a plurality of process chambers configured to perform processing steps and or measurement steps on the wafers, loadlock cooling stations for receiving the wafers from the processing chambers and a transport chamber interconnecting the loadlocks, cooling chambers and process chambers. A first multi-axis robot transfers wafers between the FOUPs, loadlocks and loadlock cooling stations, at an ambient pressure. A second multi-axis robot tranfers wafers between the loadlocks, process chambers and the loadlock cooling stations, and is adapted to operate in a transport chamber at a pressure that is different from the ambient pressure.

Abstract: Systems and techniques for characterizing samples using optical techniques. Coherent light may be incident on a sample, and a diffraction pattern detected. Information indicative of diffraction pattern intensity may be used to determine one or more sample characteristics and/or one or more pattern characteristics. For example, sample characteristics such as stress, warpage, curvature, and contamination may be determined. The coherent light may be light of a single wavelength, or may be light of multiple wavelengths.

Abstract: Methods and systems for improving heteroepitaxial crystal quality of semiconductor materials include forming a pattern on the semiconductor substrate over which the hetero-epitaxial layer is grown. The pattern provides predetermined sites for dislocation initiation and termination of dislocation propagation. The layer may be treated with a focused laser beam during or subsequent to the layer growth process. Laser light may be focused at a selected depth, where the light intensity is sufficient to cause structural and/or electronic changes localized at that depth. The laser beam may be selectively scanned to provide the desired change only at preferred spatial locations on the substrate. The laser wavelength and power may be selected to be appropriate for the materials being treated.

Abstract: Methods and systems for in situ process control, monitoring, optimization and fabrication of devices and components on semiconductor and related material substrates includes a light illumination system and electrical probe circuitry. The light illumination system may include a light source and detectors to measure optical properties of the in situ substrate while the electrical probe circuitry causes one or more process steps due to applied levels of voltage or current signals. The electrical probe circuitry may measure changes in electrical properties of the substrate due to the light illumination, the applied voltages and/or currents or other processes. The in situ process may be controlled on the basis of the optical and electrical measurements.

Abstract: A thermoelectric power generator includes a thermoelectric pile in a chamber. A window admits light and/or heat radiation such as solar radiation into the chamber, which is absorbed in a radiation absorbing body in thermal contact with a first side of the thermoelectric pile, whereby the temperature of the first side is raised. A second side of the thermoelectric pile is in thermal contact with the wall of the chamber, which is a heat sink to maintain the second side at a lower temperature. The temperature difference produces a voltage difference at electrical contacts to the thermoelectric pile, which is capable of powering electrical devices.

Abstract: Methods for processing semiconductor materials and substrates with a focused or collimated light beam. Light may be directed on a sample to alter material properties at a depth below the surface. The focused light beam has a peak power density positioned at a selected depth, and absorption of light energy, resulting from selection of wavelength and optical characteristics of the substrate as a function of depth, results in process effects taking place over a preferred limited range of depth. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the light beam density in the vicinity of the focused beam spot. The wavelength may be selected to be appropriate for the process effect chosen. The beam may be scanned over the substrate to selectively provide processing effects.

Abstract: Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a peak power, a pulse width and is modulated to a selected duty cycle to provide a selected energy per pulse and average power to the sample surface. The focused laser beam is scanned over the sample surface to provide controlled process effects limited to the area of the beam diameter and along the scanning path. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the focused beam diameter. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Systems and techniques for improved spectroscopy. In some embodiments, mechanical and/or optical zoom mechanisms may be provided for monochromator systems. For example, movable detector systems allow a detector to be positioned with respect to a dispersive element in order to obtain a first resolution. The detector systems may then allow the detector to be positioned with respect to a dispersive element to obtain a second different resolution. In some embodiments, spectroscopy of a first sample region may be performed using a plurality of excitation wavelengths. Multiple detectors may be positioned to receive light associated with different ones of the plurality of excitation wavelengths.

Abstract: A system and method for mapping a wafer includes scanning the wafer with a laser beam using a continuous spiraling pattern on the wafer surface, where the spiraling can be inward or outward. A microprocessor analyzes characteristics of the reflected, diffracted, and/or scattered beams and synchronizes each beam with a location on the wafer to generate a map of the wafer.

Abstract: A metallic, semiconductor, dielectric or oxide layer, such as a thin gate oxide, is formed by supplying a wafer in a processing chamber with thermal energy to heat the wafer and light energy, such as laser light at a selected wavelength, to improve the quality of the resulting layer. The laser light may be focused and/or scanned to control the depth and spatial extent of laser processing.

Abstract: Systems and techniques for contemporaneous Raman and photoluminescence spectroscopy. Light that has interacted with a sample is dispersed to separate wavelength components, including Raman and photoluminescence components. A first array detector is positioned to receive Raman components, and a second array detector is positioned to receive Raman components. The first array detector and the second array detector may comprise the same detector material, or different detector materials.

Abstract: A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Abstract: Systems and techniques for contemporaneous Raman and photoluminescence spectroscopy. Light that has interacted with a sample is dispersed to separate wavelength components, including Raman and photoluminescence components. A first array detector is positioned to receive Raman components, and a second array detector is positioned to receive Raman components. The first array detector and the second array detector may comprise the same detector material, or different detector materials.

Abstract: A copper film is annealed at high pressure to enhance grain growth and remove voids. Other films, such as dielectrics, may also be suitable. High pressure can be used in conjunction with temperatures lower than room temperature for annealing or higher temperatures may be used to further enhance grain growth.