Abstract: A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.

Abstract: A rapid thermal processor, having a process chamber, including a stable heat source in the form of a heatable mass. Heat is provided to the heatable mass using a series of heating devices. The temperature of the heatable mass establishes the temperature of a semiconductor wafer placed in contact or in close proximity to the heatable mass. To reduce thermal gradients, the heatable mass can be included in an insulative compartment made of an insulating material, such as opaque quartz and the like. The top of the insulative compartment can include an access portion to allow the semiconductor wafer to be placed on the heatable mass disposed therein. During processing, the wafer may be further exposed to a high intensity radiation energy source for a short duration of time.

Abstract: A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a resistive heating element positioned to heat air or other gases allowed to enter the process tube. The wafer carrier and heating assembly are vertically raised into a position within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively raise the temperature of the wafers.

Abstract: A wafer mapping system uses a camera to acquire an image of a carrier containing wafers. In one embodiment, the acquired image is stored as rows and columns of pixels. The presence and location of a wafer in the carrier are determined by looking for pixel intensity variations in a column of the image.

Abstract: A processing system is provided including a process chamber defining a process chamber opening, and an apparatus for isolating the process chamber. The apparatus includes a gate member, which defines a first opening, mounted to the process chamber such that the first opening and the process chamber opening are substantially concentric. The apparatus also includes a door having a first door portion defining a second opening. The door is configured to be moveable into a first position, where the first door portion is moved over the process chamber opening until the second opening is substantially concentric with the first opening and the process chamber. The door is also configured to be moveable into a second position, where the second door portion is moved over the first opening and the process chamber opening to provide a closure for the first opening and the process chamber opening.

Abstract: A system and method are provided for semiconductor wafer processing. A wafer processing system includes a transfer chamber, a loadlock module connected to the transfer chamber, a plurality of processing modules vertically mounted in-line with the loadlock module, and a wafer transfer apparatus. The wafer transfer apparatus moves a wafer from the loadlock module to at least one of the plurality of processing modules where processing of the wafer takes place. The system and method of the present invention minimize the required clean room space while heightening process control.

Abstract: A benchtop processing system utilizing a wafer receptacle for wafer processing is provided. The wafer receptacle has a plurality of sloped projections capable of receiving a plurality of wafers having different diameter sizes. The wafer receptacle is transported to a processing chamber from a wafer reception module which can also be used as a cooling module. Advantageously, the benchtop processing system and method of the present invention allows for efficient and compact wafer processing.

Abstract: An apparatus and process for processing a substrate using components and particles formed in a remote plasma generation section of a processing chamber. The processing chamber includes a processing section and a plasma generation section. A plasma field is generated in the plasma generation section, such that the plasma field is generated remotely from the processing section. Components and particles from the plasma field can diffuse and/or drift from the plasma generation section through a passageway to the processing section. The processing chamber may include a plurality of plasma generation sections for generating additional plasma fields. In each instance, the additional plasma fields are generated remotely from the processing section.

Abstract: A method and system are provided for delivering a source gas to a processing chamber. A source gas delivery method includes providing a precursor chamber configured to hold precursor vapor, providing a saturated precursor vapor at a selected pressure within the precursor chamber, and flowing or diffusing saturated precursor vapor from the precursor chamber to the processing chamber until a selected pressure is provided in the processing chamber. A source gas delivery system includes a precursor chamber configured to hold precursor vapor, a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber, and a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a selected pressure is provided in the processing chamber. Advantageously, the present invention allows for improved precursor vapor delivery and enhanced control over thin film deposition with less waste of precursor material.

Abstract: An improved system and method for obtaining data related to the operation of a processing system which converts from analog measurement data, usually obtained from meters and gages, to digital data. Visual images of various types of measuring instruments are collected and used for measuring a process functionality. An image sensor provides an image of a first feature of the measuring instrument. The image data is processed by an image processor, which is operable to detect a first feature and determine its position relative to a second feature of the measuring instrument. The difference in the relative positions (measured distance) can then be compared to a predetermined or expected value. If the measured and expected values are not substantially the same, a signal can be generated which instructs a controller to adjust the process functionality until the measured value reaches the expected value.

Abstract: A steam oxidation process which provides uniform coverage of oxygen radicals across a surface of a substrate to enhance the oxidation rate and form a uniform layer of SiO2. The steam oxidation process provides the heat and oxygen radicals for SiO2 formation through the combustion of a process flame. The process flame can be fueled by a combination of H2 and O2 process gases. The process flame can include a plurality of process flames directed substantially perpendicular to the target substrate to provide uniform heating of the substrate and a uniform deposition of oxygen radicals across the surface of the substrate to enhance the formation of an oxidation layer.

Abstract: A wafer processing system occupies minimal floor space by using vertically mounted modules such as reactors, load locks, and cooling stations. Further saving in floor space is achieved by using a loading station which employs rotational motion to move a wafer carrier into a load lock. The wafer processing system includes a robot having extension, rotational, and vertical motion for accessing vertically mounted modules. The robot is internally cooled and has a heat resistant end-effector, making the robot compatible with high temperature semiconductor processing.

Abstract: A robot wafer alignment tool uses a reflector mounted on a multi-axis robot to determine the position of the robot or other objects within a chamber. The reflector reflects images to at least one camera from an area or object of interest in the chamber.

Abstract: A processing system including a chamber defining an interior cavity having a processing tube assembly arranged within the interior cavity. A heating assembly moveable relative to the processing tube assembly from a first position where said processing tube assembly is disposed within the heating assembly and a second position where the processing tube assembly is exposed to an internal environment within the interior cavity of the chamber.

Abstract: A wafer processing system occupies minimal floor space by using vertically mounted modules such as reactors, load locks, and cooling stations. Further saving in floor space is achieved by using a loading station which employs rotational motion to move a wafer carrier into a load lock. The wafer processing system includes a robot having extension, rotational, and vertical motion for accessing vertically mounted modules. The robot is internally cooled and has a heat resistant end-effector, making the robot compatible with high temperature semiconductor processing.

Abstract: A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Abstract: A valve assembly including a main body defining a central axis and a gate. The gate includes a curved surface relative to the central axis and the gate is disposed within the main body. The gate is rotatable about an axis of rotation running along the length of the gate. The valve assembly also includes an actuation assembly for rotating the gate about the axis of rotation between a first position where said valve is open and a second position where said valve is closed.

Abstract: An apparatus and method for depositing a thin film on a semiconductor substrate. The apparatus includes a chamber or housing suited for holding a plurality of wafer platforms. The wafer platforms are arranged stacked in the chamber equidistant and electrically isolated from each other wafer platform. At least two of the plurality of wafer platforms are electrically coupled to a power source to form a first electrode and a second electrode. The remainder of the plurality of wafer platforms are disposed therebetween. In this manner, the first electrode and the second electrode form a single series capacitor. At least one reactant gas is provided in the chamber and reacted with sufficiently supplied energy to form a plasma. Radicals or ions from the plasma react on the surface of the wafers to cause a thin film layer to be distributed on the equally dispersed wafers positioned on a surface of the wafer platforms.

Abstract: A system and associated method for aligning semiconductor wafers and wafer-like objects relative to a transport mechanism. An image of, for example, a wafer is acquired, digitized, and stored in a computer as an array of pixels, each pixel representing a point on the image. Data points along the edge of the wafer are extracted and used to geometrically estimate the center of the wafer object. The estimated wafer center is then compared to the position of a predetermined reference position to determine an offset. Using this information, the wafer transport mechanism can then be re-adjusted to pick up the wafer on the corrected center.

Abstract: A processing system and associated method for vacuum evaporation of material onto a substrate. The processing system includes a loading chamber, a transfer chamber, and a thermal processing chamber arranged together to form a cluster tool. The cluster tool arrangement provides the system a continuous processing capability. The system also includes an evacuation system arrangement for evacuating the processing system to adequate processing pressure levels. The evacuation system arrangement includes a series of pumps, which are capable of maintaining the selected processing pressure levels for continuous thermal evaporation processing without the need for lowering the pressure to deep vacuum pressure levels.