Abstract: The present invention discloses a dual-sided integrated sherpa fabric and its manufacturing process, the dual-sided integrated sherpa fabric comprises a single jersey part and a sherpa part, wherein raw materials of the single jersey part are a combination of 100% polyester, 100% cotton, polyester-cotton blended yarn, viscose, viscose-polyester blended yarn and chinlon, while the raw material of the sherpa part is 100% polyester; the present invention utilizes a new process for manufacturing, which eliminates the need of glue during the production of fabrics by personnel, reduces environmental pollution, and improve health of consumers; moreover, because the fabric is integrally formed, the softness of the fabric is prevented from being decreased due to excessive addition of glue, so that the softness of the fabric can be improved by 50% and the elasticity of the fabric can be improved by 70%, the service life of the fabric is prolonged, and the manufacturing process is simple, which reduces the labor cost of

Abstract: A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Abstract: A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Abstract: A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Abstract: A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R1aR1bR1cCS)s(R22N)n(Si—Si)XxHh (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R1a, R1b, R1c, R22, and X are as described herein.

Abstract: A method of producing a halosiloxane, the method comprising: combining water, a halosilane, and a first solvent, where the first solvent has a water solubility of >1.5 grams in 100 ml of solvent, to form a reaction mixture having a temperature above the melting point temperature of the solvent, partially hydrolyzing and condensing the halosilane to form a reaction product mixture comprising the halosiloxane, the solvent, a hydrogen halide and unreacted halosilane, and, optionally, adding a second solvent with a boiling point?the boiling point of the halosiloxane to the reaction mixture or the reaction product mixture.

Abstract: A hydrocarbyloxydisilane according to formula (1) Si2(OR)xH6-x??(I) wherein x is 1-5 and R is hydrocarbyl having from 1 to 10 carbon atoms, with the proviso that when x is 1, R is not methyl and when x is 3, formula (1) does not represent 1,1,2-trimethoxydisilane, and a method of making an hydrocarbyloxydisilane, the method comprising: causing the reaction of i) an hydrocarbylaminodisilane, and ii) an alcohol according to formula (II) R2OH;??(II) where R2 is hydrocarbyl having from 1 to 10 carbon atoms, to form a product mixture comprising the hydrocarbyloxydisilane.

Abstract: Thio(di)silanes comprising a thiosilane of formula (A): (R1aR1bR1cCS)s(Si)XxHh (A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (R1aR1bR1cCS)s(R22N)(Si—Si)XxHh (I) wherein subscript s is from 1 to 6, and wherein R1a, R1b, R1c, R2, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

Abstract: A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.

Abstract: A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.

Abstract: Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

Abstract: The present disclosure includes a composition for forming a silicon-containing film on a substrate, comprising: a silicon precursor and a nitrogen precursor. The silicon-containing film is an elemental silicon film, a silicon carbon film, a silicon nitrogen film, or a silicon oxygen film. The substrate is a semiconductor material. The silicon precursor comprises trichlorodisilane. The trichlorodisilane is 1,1,1-trichlorodisilane.

Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Abstract: A method of making neopentasilane, the method comprising: contacting perchloroneopentasilane with a reductive effective amount of an alkali metal aluminum hydride in an alkylaluminum compound of formula RxAlCl3-x, where R is alkyl having from at least 5 carbon atoms, x is an integer from 1 to 3, and the alkylaluminum compound has a boiling point of at least 250° C., at conditions sufficient to reduce the perchloroneopentasilane, to form a reaction product mixture comprising neopentasilane, and separating the neopentasilane from the product mixture to form a neopentasilane isolate.

Abstract: A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) R1 N(R2)a(SiH3)2?a (I), where R1 is an organic polymer, a C-1-20 hydrocarbyl group or —SiR331, where R3 is C1-6 hydrocarbyl, R2 is a C-1-20 hydrocarbyl group, H, or —SiR331, where R3 is as defined above, subscript a is 0 or 1, provided that R1 and R2 may be the same or different except if R1 is phenyl, R2 is not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.

Abstract: A method of producing a halosiloxane, the method comprising: i) combining water, a halosilane, and a first solvent to form a reaction mixture, ii) partially hydrolyzing and condensing the halosilane to form a reaction product mixture comprising the halosiloxane, the solvent, unreacted halosilane, and hydrogen halide, iii) adding a second solvent, where the second solvent has a boiling point the boiling point of the halosiloxane, to the reaction mixture in i) or to the reaction product mixture in ii), and iv) recovering the halosiloxane from the reaction product mixture.

Abstract: A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.

Abstract: A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

Abstract: A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Abstract: The disclosure provides an MAX phase material, a preparation method therefor, and application thereof. The molecular formula of the MAX phase material is represented as Mn+1(AzA?1?z)hXn, wherein M is selected from group IIIB, IVB, VB or VIB elements, A is selected from element Zn, Cu, Ni, Co, Fe or Mn, A? is selected from group IB, IIB, VIII, IVA, VA or VIA elements, X is selected from elements C and/or N, n is 1, 2, 3 or 4, 0<z?1, a unit cell of the MAX phase material is formed by alternately stacking Mn+1Xn units and (AzAzA?1?z)h layers of atoms, and h is the number of layers of the (AzAzA?1?z) layers of atoms located between the Mn+1Xn unit layers, and h is 1, 2 or 3.