Patents by Inventor Xiaobing Zhou

Xiaobing Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8658284
    Abstract: A polysilane-polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each R1 and each R2 are each independently selected from H, Si, and N atoms, R3 is selected from H, Si, or C atoms, a?1, b?1, and a quantity (a+b)?2. The polysilane-polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane-polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: February 25, 2014
    Assignee: Dow Corning Corporation
    Inventors: Wei Chen, Eric Scott Moyer, Binh Thanh Nguyen, Sheng Wang, Mark A. Wanous, Xiaobing Zhou
  • Publication number: 20140051804
    Abstract: Polysilanesiloxane copolymers or resins and method of making are provided. The present disclosure further provides a method of applying the polysilanesiloxane copolymers onto a substrate to form a polysilanesiloxane film for use in photolithography (193 nm).
    Type: Application
    Filed: March 8, 2012
    Publication date: February 20, 2014
    Inventors: Xiaobing Zhou, Eric S. Moyer
  • Publication number: 20140004357
    Abstract: Inorganic polysilanesiloxane (PSSX) copolymers and method of making and applying the same to the surface of a substrate is provided. These PSSX copolymers are beneficial in forming a dense silicon dioxide layer on a substrate under mild oxidative conditions. The PSSX copolymers comprise SixOy(OH)z units, wherein y and z are defined by the relationship (2y+z)?(2x+2) and x is either 4 or 5. More specifically, the PSSX copolymers do not contain Si—C covalent bonds.
    Type: Application
    Filed: March 9, 2012
    Publication date: January 2, 2014
    Applicant: DOW CORNING CORPORATION
    Inventor: Xiaobing Zhou
  • Patent number: 8580886
    Abstract: A method for preparing a bis(alkoxysilylorgano)dicarboxylate includes reacting a haloorganoalkoxysilane, a dimetal salt of a dicarboxyl functional compound, and a phase transfer catalyst. A quaternary iminium compound of a polyaza, polycycloalkene is useful as the phase transfer catalyst. The product may be a bis(alkoxysilylalkyl)fumarate, which is useful as a coupling agent in rubber compositions for tire applications.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: November 12, 2013
    Assignee: Dow Corning Corporation
    Inventors: Michael Backer, John Gohndrone, Don Kleyer, Xiaobing Zhou
  • Publication number: 20130184482
    Abstract: A process for preparing an acryloyloxysilane, the process comprising reacting a metal salt of a carboxylic acid having the formula [CR22?CR1COO?]aMa+ (I), with a haloorganoalkoxysilane having the formula XR3Si(OR4)nR53—n (II) in the presence of mineral spirits and a phase transfer catalyst at a temperature of from 50 to 160° C. to form a mixture comprising an acryloyloxysilane and a metal halide having the formula Ma+X?a (III), wherein R1 is H or C1-C6 hydrocarbyl, each R2 is independently R1 or [COO?]aMa+, Ma+ is an alkali metal cation or alkaline earth metal cation, a is 1 or 2, X is halo, R3 is C1-C6 hydrocarbylene, each R4 is independently C1-C10 Q hydrocarbyl, each R5 is independently R1 and n is an integer from 1 to 3.
    Type: Application
    Filed: September 20, 2011
    Publication date: July 18, 2013
    Applicant: Dow Corning Corporation
    Inventors: Peter Cheshire Hupfield, Xiaobing Zhou
  • Publication number: 20130072625
    Abstract: A method for preparing a bis(alkoxysilylorgano)dicarboxylate includes reacting a haloorganoalkoxysilane, a dimetal salt of a dicarboxyl functional compound, and a phase transfer catalyst. A quaternary iminium compound of a polyaza, polycycloalkene is useful as the phase transfer catalyst. The product may be a bis(alkoxysilylalkyl)fumarate, which is useful as a coupling agent in rubber compositions for tire applications.
    Type: Application
    Filed: December 2, 2011
    Publication date: March 21, 2013
    Applicant: Dow Corning Corporation
    Inventors: Michael Backer, John Gohndrone, Don Kleyer, Xiaobing Zhou
  • Publication number: 20130022807
    Abstract: A method of preparing a polymeric methylene diphenyl diisocyanate-polydialkylsiloxane resin by mixing at a temperature between 25° C. and 100° C.: (i) a polymeric methylene diphenyl diisocyanate with (ii) a polydialkylsiloxane selected from hydroxyalkyl dialkyl terminated polydialkylsiloxane having a viscosity of from 5 to 500 000 cSt at 25° C. or (hydroxyalkoxy)alkyl dialkyl terminated polydialkylsiloxane having a viscosity of from 5 to 500 000 cSt at 25° C. in an amount such that from 1 to 99% by weight of the total weight of (i) and (ii) is component (ii), optionally in the presence of a solvent; and subsequently extracting the solvent, if present.
    Type: Application
    Filed: March 25, 2011
    Publication date: January 24, 2013
    Inventors: Igor Chorvath, Xiaobing Zhou
  • Publication number: 20120214006
    Abstract: A polysilane?polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each R1 and each R2 are each independently selected from H, Si, and N atoms, R3 is selected from H, Si, or C atoms, a?1, b?1, and a quantity (a+b)?2. The polysilane?polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane?polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine.
    Type: Application
    Filed: October 25, 2010
    Publication date: August 23, 2012
    Inventors: Wei Chen, Eric Scott Moyer, Binh Thanh Nguyen, Sheng Wang, Mark A. Wanous, Xiaobing Zhou
  • Patent number: 8147789
    Abstract: A composition comprising at least 93% (w/w) neopentasilane; and a method of preparing neopentasilane, the method comprising treating a tetrakis-(trihalosilyl)silane with diisobutylaluminum hydride.
    Type: Grant
    Filed: August 29, 2007
    Date of Patent: April 3, 2012
    Assignee: Dow Corning Corporation
    Inventors: John Patrick Cannady, Xiaobing Zhou
  • Publication number: 20110195582
    Abstract: A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.
    Type: Application
    Filed: August 11, 2009
    Publication date: August 11, 2011
    Inventor: Xiaobing Zhou
  • Publication number: 20100176338
    Abstract: A composition comprising at lest 93% (w/w) neopentasilane; and a method of preparing neopentasilane, the method comprising treating a tetrakis-(trihalosilyl)silane with diisobutylaluminum hydride.
    Type: Application
    Filed: August 29, 2007
    Publication date: July 15, 2010
    Inventors: John Patrick Cannady, Xiaobing Zhou
  • Publication number: 20030148019
    Abstract: A colloid composition can be used to form a thin film on a substrate. The colloid can be colloidal silica. The thin film can be a dielectric layer. The substrate can be a semiconductor substrate having gaps thereon.
    Type: Application
    Filed: November 19, 2001
    Publication date: August 7, 2003
    Inventors: Byung Keun Hwang, Kermit Shannon Kwan, Zhongtao Li, Eric Scott Moyer, Sheng Wang, David Lee Wyman, Xiaobing Zhou