Abstract: A method of making an organoaminosilane compound, comprising i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH4), and C) a catalyst, where the catalyst comprises magnesium or boron, where A), B) and C) are combined under sufficient conditions to form the organoaminosilane compound and hydrogen. A method of making a silylamine, the method comprising: i) forming an organoaminosilane compound by i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH4), and C) a catalyst, where the catalyst comprises magnesium or boron, and ii) combining ammonia and the organoaminosilane compound produced in i) under sufficient conditions to form a silylamine product and a byproduct, where the byproduct is a primary or secondary amine.

Abstract: The present invention provides processes for preparing silanylamines, such as disilanylamines and polysilanylamines, and compositions comprising the silanylamines. In one embodiment, the present invention provides processes for preparing a silanylamine compound, the processes comprising reacting a starting compound of general formula RR1N—(SixH2x+1) with an amine compound of general formula R2R3NH to produce the silanylamine compound of general formula R2mR3n—N(SixH2+1)3-m-n.

Abstract: A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.

Abstract: A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) R1 N(R2)a(SiH3)2?a (I), where R1 is an organic polymer, a C-1-20 hydrocarbyl group or —SiR331, where R3 is C1-6 hydrocarbyl, R2 is a C-1-20 hydrocarbyl group, H, or -SiR331 , where R3 is as defined above, subscript a is 0 or 1, provided that R1 and R2 may be the same or different except if R1 is phenyl, R2 is not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.

Abstract: A method of producing a halosiloxane, the method comprising: i) combining water, a halosilane, and a first solvent to form a reaction mixture, ii) partially hydrolyzing and condensing the halosilane to form a reaction product mixture comprising the halosiloxane, the solvent, unreacted halosilane, and hydrogen halide, iii) adding a second solvent, where the second solvent has a boiling point the boiling point of the halosiloxane, to the reaction mixture in i) or to the reaction product mixture in ii), and iv) recovering the halosiloxane from the reaction product mixture.

Abstract: A method of producing a halosiloxane, the method comprising: combining water, a halosilane, and a first solvent, where the first solvent has a water solubility of >1.5 grams in 100 ml of solvent, to form a reaction mixture having a temperature above the melting point temperature of the solvent, partially hydrolyzing and condensing the halosilane to form a reaction product mixture comprising the halosiloxane, the solvent, a hydrogen halide and unreacted halosilane, and, optionally, adding a second solvent with a boiling point a the boiling point of the halosiloxane to the reaction mixture or the reaction product mixture.

Abstract: Thio(di)silanes comprising a thiosilane of formula (A): (R1aR1bR1cCS)s(Si)XxHh (A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (R1aR1bR1cCS)s(R22N)(Si—Si)XxHh (I) wherein subscript s is from 1 to 6, and wherein R1a, R1b, R1c, R2, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

Abstract: A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R1aR1bR1cCS)s(R22N)n(Si—Si)XxHh (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R1a, R1b, R1c, R22, and X are as described herein.

Abstract: A method of making an organoaminosilane compound, comprising i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH4), and C) a catalyst, where the catalyst comprises magnesium or boron, where A), B) and C) are combined under sufficient conditions to form the organoaminosilane compound and hydrogen. A method of making a silylamine, the method comprising: i) forming an organoaminosilane compound by i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH4), and C) a catalyst, where the catalyst comprises magnesium or boron, and ii) combining ammonia and the organoaminosilane compound produced in i) under sufficient conditions to form a silylamine product and a byproduct, where the byproduct is a primary or secondary amine.

Abstract: Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Abstract: A hydrocarbyloxydisilane according to formula (I) Si2(OR)xH6-x; ??(I) where x is 1-5 and R is hydrocarbyl having from 1 to 10 carbon atoms, with the proviso that when x is 1, R is not methyl and when x is 3, (I) does not represent 1,1,2-trimethoxydisilane, and a method of making an hydrocarbyloxydisilane, the method comprising: causing the reaction of i) an hydrocarbylaminodisilane, and ii) an alcohol according to formula (II) R2OH; ??(II) where R2 is hydrocarbyl having from 1 to 10 carbon atoms, to form a product mixture comprising the hydrocarbyloxydisilane.

Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising a compound which is a disilane and which comprises at least one chloro group, at least one dialkylamino group and at least one hydrido group. A composition for film forming is also disclosed, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, a nitrogen precursor, and an oxygen precursor. Further disclosed is a process of synthesizing the Silicon Precursor Compound; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound; the silicon-containing film formed thereby; and a method of forming the Silicon Precursor Compound.

Abstract: A method of making neopentasilane, the method comprising: contacting perchloroneopentasilane with a reductive effective amount of an alkali metal aluminum hydride in an alkylaluminum compound of formula RxAlCl3-x, where R is alkyl having from at least 5 carbon atoms, x is an integer from 1 to 3, and the alkylaluminum compound has a boiling point of at least 250° C., at conditions sufficient to reduce the perchloroneopentasilane, to form a reaction product mixture comprising neopentasilane, and separating the neopentasilane from the product mixture to form a neopentasilane isolate.

Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising pentachlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Abstract: A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

Abstract: The present invention provides processes for preparing silanylamines, such as disilanylamines and polysilanylamines, and compositions comprising the silanylamines. In one embodiment, the present invention provides processes for preparing a silanylamine compound, the processes comprising reacting a starting compound of general formula RR1N—(SixH2x+1) with an amine compound of general formula R2R3NH to produce the silanylamine compound of general formula R2mR3n-N(SixH2+1)3-m-n.

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Abstract: Disclosed is a compound of formula (I): (R1R2N)SinH2n+1 (I), wherein subscript n is an integer from 3 to 9; and each R1 and R2 independently is (C1-C6)alkyl, (C3-C6)cycloalkyl, (C2-C6)alkenyl, (C2-C6)alkynyl, or phenyl; or R1 is H and R2 is (C1-C6)alkyl, (C3-C6)cycloalkyl, (C2-C6)alkenyl, (C2-C6)alkynyl, or phenyl; or R1 and R2 are bonded together to be -R1a R2a wherein -R1a-R2a- is (C2-C6)alkylene. Also disclosed are a method of making, intermediates useful therein, method of using, and composition comprising the compound of formula (I).