Abstract: In some embodiments, the present disclosure relates to a device having a first waveguide and a second waveguide arranged over a substrate. The first waveguide has a first input terminal and a first output terminal, wherein the first input terminal is configured to receive light. The second waveguide is arranged laterally beside the first waveguide and has a second input terminal and a second output terminal. The second input terminal of the second waveguide is configured to receive light. The first waveguide further includes a first portion that has a different structure than surrounding portions of the first waveguide. The second waveguide further includes a second portion that has a different structure than surrounding portions of the second waveguide. The first waveguide is spaced apart at a maximum distance from the second waveguide at the first portion and the second portion.

Abstract: Embodiments include Multiple Gate Field-Effect Transistors (MuGFETs) and methods of forming them. In an embodiment, a structure includes a substrate, a fin, masking dielectric layer portions, and a raised epitaxial lightly doped source/drain (LDD) region. The substrate includes the fin. The masking dielectric layer portions are along sidewalls of the fin. An upper portion of the fin protrudes from the masking dielectric layer portions. A first spacer is along a sidewall of a gate structure over a channel region of the fin. A second spacer is along the first spacer. The raised epitaxial LDD region is on the upper portion of the fin, and the raised epitaxial LDD region adjoins a sidewall of the first spacer and is disposed under the second spacer. The raised epitaxial LDD region extends from the upper portion of the fin in at least two laterally opposed directions and a vertical direction.

Abstract: The present disclosure provides a method for manufacturing a board-to-board connection structure. The method includes defining a first through hole in a first circuit board, disposing a first connector within the first through hole by a first conductive paste, and connecting the first connector to a second circuit board on which a second connector is installed, thereby realizing a connection of the two circuit boards, and reducing a height of the two circuit boards after the connection. That is, the height of the board-to-board connection structure is reduced. Additionally, since the first connector is received within the first through hole, the first connector is not easy to be damaged and oxidized. The present disclosure further provides a board-to-board connection structure manufactured by the above method.

Abstract: At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.

Abstract: A memory device is disclosed. The memory device includes: a first memory cell, including: a first transistor; a second transistor; and a first capacitor; a second memory cell, including: a third transistor; a fourth transistor; and a second capacitor; a third memory cell, including: a fifth transistor; a sixth transistor; and a third capacitor; and a fourth memory cell, including: a seventh transistor; an eighth transistor; and a fourth capacitor; wherein an electrode of the first capacitor, an electrode of the second capacitor, an electrode of the third capacitor, and an electrode of the fourth capacitor are electrically connected to a conductor. An associated manufacturing method is also disclosed.

Abstract: A window wiper is provided. A wiper blade assembly includes a wiper blade and a mounting part. The wiper blade includes a first layer and a second layer which are arranged in a layered manner. The first layer is a scrubbing layer made of a rubber material, silica gel material, soft PVC material or EVA material, and the second layer is a guide layer made of a water-absorbing material. A rear end of the wiper blade is connected with the mounting part, and its front end is a free end. The window wiper includes the wiper blade assembly, a wiper blade mounting frame and a handle, wherein the wiper blade mounting frame is provided with a water receiving port. When the wiper blade assembly is mounted on the handle through the wiper blade mounting frame, the guide layer is located above the water receiving port.

Abstract: A semiconductor device includes a silicon substrate; a semiconductor fin over the silicon substrate; and an isolation structure over the silicon substrate. The semiconductor fin includes a first portion and a second portion over the first portion. The first portion is surrounded by the isolation structure, and the second portion protrudes above the isolation structure. The second portion has a different crystalline lattice constant than the first portion. The first portion includes a first dopant, and the second portion is substantially free of the first dopant. The semiconductor device further includes a gate structure above the isolation structure and engaging multiple surfaces of the second portion.

Abstract: An autonomous mobile device moves through a physical space using simultaneous localization and mapping (SLAM) techniques. SLAM processes images from cameras to determine localization and trajectory of the device based on features that are assumed to be stationary. SLAM performance is improved by removing moving features from consideration. A first position of a feature at a first time and data from an inertial sensor are used to determine a predicted position at a second time. The predicted position is compared to a second position of the feature at the second time. This comparison takes into consideration an assumed Gaussian error distribution of how the positions are determined. If the predicted position differs from the second position by less than a threshold value, the feature may be determined to be stationary. The stationary features are then processed using SLAM to determine the localization and trajectory information.

Abstract: This application discloses a method, apparatus, device and medium for a business function page. The method receives a data element contained in a target business function page which is inputted, receives a function component contained in the target business function page which is inputted, and receives a first operation which is inputted, and in response to the first operation, generates the target business function page corresponding to a target business function according to a business element component association table. The business element component association table is obtained by filling an association template according to an association relationship between data elements contained in a business data table and function components, and the business data table is generated according to the data elements.

Abstract: Provided are an antibody targeting NKG2A, a preparation method therefor and use thereof. Specifically, provided is a new mouse or humanized monoclonal antibody targeting NKG2A, and a method for preparing the monoclonal antibody. The monoclonal antibody can bind to an NKG2A antigen with high specificity, and has high affinity and significant activities such as anti-tumor activity.

Abstract: An organic compound can be applied as a host material for an OLED display device. The compound has a structure represented by Formula (I): a and b, being independently 1, 2 or 3, respectively represent the numbers of electron donor D and electron acceptor A; c and d, independently being 0, 1, or 2, respectively representing the numbers of group L1 and group L2. D, L1 and L2 are each alkyl, cycloalkylene, heterocyclic group, aryl, heteroaryl, fused aryl, or fused heteroaryl; and A is selected from nitrogen-containing heterocyclic substituents, cyano-containing substituents, triaryl-boron-derived substituents, and phosphoxy-containing substituents. The compound has a D-(?)-?-(?)-A structure with bipolarity, and the ? bond can interrupt an intramolecular charge transfer between D and A, so that the excited state is limited to a local excited state in moiety of D or A, and the compound has a small excited-state dipole moment.

Abstract: A circuit board, with inbuilt protection against incoming and outgoing electromagnetic interference (EMI), includes an insulating adhesive portion, a first signal line, and a second signal line. The first signal line and the second signal line are surrounded and separated by an electromagnetic shielding film against EMI. The insulating adhesive portion fills a gap between the first signal line and the electromagnetic shielding film and a gap between the second signal line and the electromagnetic shielding film. External interference with signals in the circuit board is reduced, mutual interference between the first signal line and the second signal line is reduced, and electromagnetic radiation of the circuit board is also reduced. A method for manufacturing the circuit board is also disclosed.

Abstract: The present disclosure provides an aromatic heterocyclic compound having property of thermally activated delayed fluorescence (TADF). The aromatic heterocyclic compound has a structure represented by Formula (I), in which X1 and X2 each is S, O, Se, or C; D is an electron donor, A is an electron acceptor; m is a number of the electron donor D, and the m electron donors D are the same or different; n is a number of the electron acceptor, and the n electron acceptors are the same or different; and m and n are 1 or 2. The aromatic heterocyclic compound provides a high luminescence efficiency. Organic light-emitting display devices including such aromatic heterocyclic compound have improved luminescence efficiency, lower cost and longer service life by using the aromatic heterocyclic compound as a light-emitting material, a host material, or a guest material.

Abstract: At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.

Abstract: A memory device is disclosed. The memory device includes: a first memory cell, including: a first transistor; a second transistor; and a first capacitor; a second memory cell, including: a third transistor; a fourth transistor; and a second capacitor; a third memory cell, including: a fifth transistor; a sixth transistor; and a third capacitor; and a fourth memory cell, including: a seventh transistor; an eighth transistor; and a fourth capacitor; wherein an electrode of the first capacitor, an electrode of the second capacitor, an electrode of the third capacitor, and an electrode of the fourth capacitor are electrically connected to a conductor. An associated manufacturing method is also disclosed.

Abstract: A method for manufacturing a circuit board comprises: a first single-sided board and an insulating structure are provided. The first single-sided board is pressed to the insulating structure and covers opposite side surfaces of the insulating structure to form a first laminated board. A second single-sided board and a third single-sided board are provided. The second single-sided board is pressed to the third single-sided board and covers opposite side walls of the third single-sided board to form a second laminated board. An inner wiring layer is formed by the second laminated board. The second laminated board with the inner wiring layer and the first laminated board are pressed to form an intermediate structure. Outer wiring layers are formed by the intermediate structure. Covering films are formed on surfaces of the outer wiring layers. Electromagnetic interference shielding layers are formed on the covering films.

Abstract: The present disclosure provides a compound used as the CPL material. The compound has a structure as shown in chemical formula I, in which L1 is selected from the group consisting of a substituted or unsubstituted C6-C30 arylene, C3-C30 heteroarylene, a substituted or unsubstituted C10-C60 fused arylene, and a substituted or unsubstituted C10-C60 fused heteroarylene; Ar1 is selected from the group consisting of a substituted or unsubstituted C6-C30 arylene, C3-C30 heteroarylene, a substituted or unsubstituted C10-C60 fused arylene, and a substituted or unsubstituted C10-C60 fused heteroarylene; n is 1 or 2, and when n is 2, the two Ar1 are identical or different; R1, R2, R3 and R4 are each independently selected from the group consisting of hydrogen, and a substituted or unsubstituted aryl or fused aryl, R1 and R2 are optionally bonded to form a ring, and R3 and R4 are optionally bonded to form a ring.

Abstract: A method for generating a steering command for controlling a vehicle is provided.

Abstract: In various embodiments, methods, systems, and vehicle apparatuses are provided. A method for implementing a lane-keeping assist unit of a vehicle by receiving information of a plurality of road geometries, and driving scenarios wherein at least one driving scenario is combined with a target path that is parallel and biased from a lane center by a desired path offset, and a reference path for guiding the vehicle to merge with the target path; adapting the reference path with control based on a selected road geometry and driving scenario; adjusting the desired path offset by considering lane markings during an intervention for an inner curve, an outer curve and a straight road; controlling the vehicle trajectory for enabling the vehicle to track the reference path; exiting the intervention once a trajectory tracking performance by the vehicle is confirmed; and aborting once an instability of the trajectory tracking performance is confirmed.

Abstract: An autonomous vehicle and a system and method of operating the autonomous vehicle. The system includes a processor. A driver-applied steering torque is received at the autonomous vehicle while the autonomous vehicle is following an initial target path via a path tracking program. The processor receives the driver-applied steering torque and allows a driver to adjust a path of the autonomous vehicle from the initial target path to a final target path determined through the driver-applied steering torque.