Abstract: A storage processing unit configured to store, in a storage unit, first data output by a device or any one of multiple devices in association with first context information related to the first data, and a determining unit configured to obtain second context information related to second data in a case where the second data is received from the device or any one of the multiple devices, and determine whether an analysis of the received second data is necessary based on the received second data and the obtained second context information and based on the first data and the first context information stored in the storage unit, are provided.

Abstract: A load transmission mechanism unit for training device includes, in a housing portion: a grip shaft portion that rotates with a grip portion, which is gripped by a user, connected to a first end portion thereof; an intermediate shaft portion that rotates in conjunction with the rotation of the grip shaft portion; a transmission portion that is suspended between the grip shaft portion and the intermediate shaft portion and transmits the mutual rotation of the grip shaft portion and the intermediate shaft portion; a rotation conversion portion that is provided on a crank shaft portion orthogonal to the intermediate shaft portion and transmits the rotation of the intermediate shaft portion; and the crank shaft portion that converts the rotation of the crank shaft portion into a vertical movement of a sliding shaft portion disposed at a position parallel to the intermediate shaft portion.

Abstract: An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

Abstract: An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

Abstract: An antenna device includes an antenna array in which a plurality of antennas each including a negative differential resistance element and a resonance circuit are arranged, a voltage bias circuit which applies a voltage to the antenna array, a first shunt element which is connected between the antenna array and the voltage bias circuit in parallel relation to each of the negative differential resistance element and the voltage bias circuit, and in which a first resistor and a first capacitor of the first shunt element are connected in series, and a second shunt element which is connected between the first shunt element and the voltage bias circuit in parallel relation to each of the negative differential resistance element and the voltage bias circuit, and in which a second resistor and a second capacitor of the second shunt element are connected in series.

Abstract: An imaging system comprising: a first lighting device that emits terahertz waves at a first quantity of light emission in a first operation mode, and emits terahertz waves at a second quantity of light emission, which is larger than the first quantity of light emission, in a second operation mode; a first detection device that detects reflected terahertz waves by a target and a control device that switches from the first operation mode to the second operation mode in a case where the first detection device detects the target in the first operation mode.

Abstract: An antenna apparatus that comprises an active antenna including an antenna, a semiconductor structure configured to operate as an oscillator, and at least two power lines configured to give a potential difference to the semiconductor structure, and configured to generate or detect an electromagnetic wave, and a control line electrically connected to one of the at least two power lines and configured to be injected with a signal for controlling a phase of the oscillator in the active antenna is provided.

Abstract: An antenna apparatus that comprises an antenna array in which a plurality of active antennas each including an antenna and a semiconductor structure configured to generate or detect an electromagnetic wave are arranged in an array, a coupling line configured to mutually couple two antennas respectively included in at least two active antennas among the plurality of active antennas, and an impedance variable device configured to make an impedance of the coupling line variable is provided.

Abstract: In an antenna array including first through fifth antennas, the second, first, and third antennas are arranged in this order in a first direction, and the fourth, first, and fifth antennas are arranged in this order in a second direction. A conductor layer of the second antenna is connected to a conductor layer of the first antenna via a first coupling line extending in the first direction, the conductor layer of the first antenna is connected to a conductor layer of the third antenna via a second coupling line extending in the first direction, a conductor layer of the fourth antenna is connected to the conductor layer of the first antenna via a third coupling line extending in the second direction, and the conductor layer of the first antenna is connected to a conductor layer of the fifth antenna via a fourth coupling line extending in the second direction.

Abstract: A movable body includes an imaging system which acquires an image formed by a terahertz wave, wherein the image is an image obtained by capturing an inspection object inside the movable body.

Abstract: A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Abstract: A high-frequency circuit device includes: a chip which includes a high-frequency element, a high-frequency circuit, a signal conductor, and a chip ground; a package substrate on which the chip is disposed, a shunt path which is constituted by a package signal conductor which is disposed on an upper surface of the package substrate and is electrically connected to the signal conductor, a package first ground which is electrically connected to the chip ground, and a shunt element which is electrically connected to the package signal conductor and the package first ground; and a package second ground which is disposed at least inside the base of the package substrate or on a back surface of the package substrate, wherein a part of the base, a part of the shunt path, and the package second ground constitute a capacitive structure.

Abstract: A device includes a first antenna arranged on a substrate, with the first antenna comprising a first semiconductor layer having terahertz-wave gain and a first conductor layer, a second antenna arranged on the substrate, with the second antenna comprising a second semiconductor layer having terahertz-wave gain and a second conductor layer, and a third conductor layer arranged on the substrate and electrically connecting the first antenna and the second antenna. A shunt device is arranged on the substrate and electrically connected to the third conductor layer. In planar view, the shunt device does not overlap with at least the first conductor layer.

Abstract: A semiconductor element comprising: an antenna array that is provided with a plurality of antennas each including a semiconductor layer having an electromagnetic wave gain or carrier nonlinearity with respect to a terahertz wave; and a coupling line that synchronizes adjacent antennas in the antenna array with each other at a frequency of the terahertz wave, wherein the coupling line includes a plurality of first regions connected to the adjacent antennas respectively and a second region provided between the plurality of first regions, wherein the second region has impedance different from impedance of each of the first regions, and wherein the second region has a loss larger than a loss of the individual first region at a frequency other than a resonance frequency of the antenna array.

Abstract: A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

Abstract: A system includes a transmission unit, a reception unit, and a lens unit and is placed in a passage, wherein in a case where a first plane that intersects a forward direction of the passage and is a surface of an object, and a second plane that intersects the forward direction of the passage, includes the lens unit, and is at a position different from a position of the first plane are set, a first area to which a terahertz wave from the transmission unit reflected from the first plane is emitted and the lens unit are disposed at positions different from each other on the second plane.

Abstract: An oscillator oscillating a tera hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

Abstract: An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

Abstract: An oscillator oscillating a tern hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

Abstract: Provided is an element that can reduce a parasitic oscillation.