Abstract: An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency fLC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.

Abstract: An element, including: a first conductor layer extending in a first direction; a second conductor layer extending in the first direction; and a semiconductor disposed between the first and second conductor layers, the semiconductor including: a first semiconductor layer in contact with the first conductor layer; a second semiconductor layer in contact with the second conductor layer; and an active layer disposed between the first and second semiconductor layers, in which: the semiconductor has a width of 0.5 ?m or more and 5 ?m or less in a direction intersecting the first and second directions, and has a thickness of 0.1 ?m or more and 1.0 ?m or less in the second direction; the active layer includes a double-barrier resonant tunnel diode; and each of the two barrier layers has a thickness of 0.7 nm or more and 2.0 nm or less in the second direction.

Abstract: Provided is a waveguide element, including: a waveguide for guiding an electromagnetic wave; a resonance antenna for radiating or receiving the electromagnetic wave, the resonance antenna being arranged at a part of the waveguide for radiating or receiving the electromagnetic wave; and an impedance matching portion for matching an impedance of the waveguide with an impedance of the resonance antenna so as to couple the waveguide to the resonance antenna. The waveguide includes: a first conductor layer and a second conductor layer each having a negative dielectric constant real part for the electromagnetic wave; and a core layer arranged between the first conductor layer and the second conductor layer. The core layer has one of a gain of the electromagnetic wave and nonlinearity of carriers for the electromagnetic wave.

Abstract: A terahertz wave oscillator that oscillates includes a negative resistance element, a resonator including a first conductor, a second conductor, and a dielectric, and a transmission line configured to supply a bias voltage to the negative resistance element. In this case, the negative resistance element and the dielectric are disposed between the first conductor and the second conductor, and the first conductor and the transmission line are connected at a node of an electric field of terahertz waves having oscillation frequency fOSC and standing in the resonator.

Abstract: A sensor to detect information on a subject by using an electromagnetic wave includes a transmitting unit having a generating element and a first antenna, a polarization converting unit, and a receiving unit having a second antenna and a detecting device. The generating element generates an electromagnetic wave, and the first antenna emits the electromagnetic wave generated by the generating element as first polarization. The polarization converting unit converts the first polarization into second polarization by changing a polarization direction of the first polarization. The second antenna receives the second polarization, and the detecting device detects the electromagnetic wave received by the second antenna. The transmitting unit and the receiving unit are disposed on the same substrate.

Abstract: Provided is a waveguide element, including: a waveguide for guiding an electromagnetic wave; a resonance antenna for radiating or receiving the electromagnetic wave, the resonance antenna being arranged at a part of the waveguide for radiating or receiving the electromagnetic wave; and an impedance matching portion for matching an impedance of the waveguide with an impedance of the resonance antenna so as to couple the waveguide to the resonance antenna. The waveguide includes: a first conductor layer and a second conductor layer each having a negative dielectric constant real part for the electromagnetic wave; and a core layer arranged between the first conductor layer and the second conductor layer. The core layer has one of a gain of the electromagnetic wave and nonlinearity of carriers for the electromagnetic wave.

Abstract: An oscillator oscillates a terahertz wave of a frequency fosc defined by a microstrip resonator configured such that a negative resistance element and a dielectric body are sandwiched between two conductors. The oscillator includes a resistance element disposed in parallel to the negative resistance element. The resistance element is disposed in a position corresponding to a node of an electric field stably existing in the resonator in the frequency fosc of the oscillated terahertz wave.

Abstract: An oscillation device comprises a substrate and a plurality of resonance structures arranged on the substrate to resonate electromagnetic waves. Each of the plurality of resonance structures has a negative differential resistance device for generating electromagnetic waves, a first conductor arranged electrically in contact with the negative differential resistance device and a second conductor arranged electrically in contact with the negative differential resistance device and disposed on the opposite side to the first conductor with respect to the negative differential resistance device. Adjacently located resonance structures of the plurality of resonance structures are interconnected by means of a metal part adapted for capacitive coupling with the first conductors thereof. The plurality of resonance structures are arranged so as to be separated from each other at least by a distance not greater than a wavelength of electromagnetic waves to be oscillated by them.

Abstract: Provided is a waveguide for guiding an electromagnetic wave between a first conductor layer and a second conductor layer each having a negative dielectric constant real part for the electromagnetic wave, the waveguide including a tapered structure in a part of the waveguide at which the electromagnetic wave exits or enters, in which a spatial profile of the tapered structure perpendicular to an optical axis extends to both sides with respect to the optical axis at least in one direction orthogonal to the optical axis as being closer to an opening plane at an outermost part of the tapered structure.

Abstract: A terahertz wave oscillator that oscillates includes a negative resistance element, a resonator including a first conductor, a second conductor, and a dielectric, and a transmission line configured to supply a bias voltage to the negative resistance element. In this case, the negative resistance element and the dielectric are disposed between the first conductor and the second conductor, and the first conductor and the transmission line are connected at a node of an electric field of terahertz waves having oscillation frequency fOSC and standing in the resonator.

Abstract: Provided is a semiconductor device including: a semiconductor element arranged on a substrate and having two electrodes; a conductive strip in contact with one of the two electrodes; and a dielectric arranged between another one of the two electrodes and the conductive strip, in which the conductive strip has an opening formed therein, the dielectric has a void formed therein, and the opening and the void are connected to each other.

Abstract: Provided are a waveguide capable of suppressing strain and defect caused in a semiconductor in an initial stage or during operation due to a manufacturing process or the like to realize improvement and stabilization of characteristics such as oscillation characteristics, and a method of manufacturing the waveguide. A waveguide includes a first conductor layer and a second conductor layer that are composed of a negative dielectric constant medium having a negative real part of dielectric constant with respect to an electromagnetic wave in a waveguide mode, and a core layer that is in contact with and placed between the first conductor layer and the second conductor layer, and includes a semiconductor portion. At least the first conductor layer has a particular depressed and projected structure extending in an in-plane direction.

Abstract: An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.

Abstract: The present disclosure relates to an oscillation circuit including a differential negative resistance element, a resonance circuit connected to the differential negative resistance element, and a stabilization circuit connected in parallel with the negative resistance element to suppress parasitic oscillation. The stabilization circuit includes a variable shunt resistor and an adjusting device for adjusting the shunt resistor.

Abstract: An oscillator oscillates a terahertz wave of a frequency fosc defined by a microstrip resonator configured such that a negative resistance element and a dielectric body are sandwiched between two conductors. The oscillator includes a resistance element disposed in parallel to the negative resistance element. The resistance element is disposed in a position corresponding to a node of an electric field stably existing in the resonator in the frequency fosc of the oscillated terahertz wave.

Abstract: An oscillation device comprises a substrate and a plurality of resonance structures arranged on the substrate to resonate electromagnetic waves. Each of the plurality of resonance structures has a negative differential resistance device for generating electromagnetic waves, a first conductor arranged electrically in contact with the negative differential resistance device and a second conductor arranged electrically in contact with the negative differential resistance device and disposed on the opposite side to the first conductor with respect to the negative differential resistance device. Adjacently located resonance structures of the plurality of resonance structures are interconnected by means of a metal part adapted for capacitive coupling with the first conductors thereof. The plurality of resonance structures are arranged so as to be separated from each other at least by a distance not greater than a wavelength of electromagnetic waves to be oscillated by them.

Abstract: Provided are a waveguide with which strain and defect caused by a manufacturing process or the like or caused in a semiconductor in an initial stage or during operation are suppressed so that improvement and stabilization of characteristics are expected, and a method of manufacturing the waveguide. A waveguide includes a first conductor layer and a second conductor layer that are composed of a negative dielectric constant medium having a negative real part of dielectric constant with respect to an electromagnetic wave in a waveguide mode, and a core layer that is in contact with and placed between the first conductor layer and the second conductor layer, and includes a semiconductor portion. The core layer including the semiconductor portion has a particular depressed and projected structure extending in an in-plane direction.

Abstract: The present invention relates to an oscillator. The oscillator includes a resonator unit configured to resonate terahertz waves generated by an active layer using intersubband transitions of a carrier. The oscillator further includes a strain generating unit configured to generate strain of the active layer. Still furthermore, the oscillator includes a control unit configured to control the strain generating unit in accordance with the oscillation characteristic (the frequency or the output) of the terahertz waves resonated by the resonator unit.

Abstract: Provided is a semiconductor device including: a semiconductor element arranged on a substrate and having two electrodes; a conductive strip in contact with one of the two electrodes; and a dielectric arranged between another one of the two electrodes and the conductive strip, in which the conductive strip has an opening formed therein, the dielectric has a void formed therein, and the opening and the void are connected to each other.

Abstract: A Schottky barrier diode includes a first semiconductor layer, a LOCOS layer arranged in contact with the first semiconductor layer, a Schottky junction region provided on a contact surface between the first semiconductor layer and a first electrode, a second semiconductor layer connected to the first semiconductor layer and having a higher carrier concentration than that of the first semiconductor layer, and a second electrode forming an ohmic contact with the second semiconductor layer. In this case, the Schottky junction region and the LOCOS layer are in contact.