Abstract: An imaging system comprising: a first lighting device that emits terahertz waves at a first quantity of light emission in a first operation mode, and emits terahertz waves at a second quantity of light emission, which is larger than the first quantity of light emission, in a second operation mode; a first detection device that detects reflected terahertz waves by a target and a control device that switches from the first operation mode to the second operation mode in a case where the first detection device detects the target in the first operation mode.

Abstract: A system includes a transmission unit, a reception unit, and a lens unit and is placed in a passage, wherein in a case where a first plane that intersects a forward direction of the passage and is a surface of an object, and a second plane that intersects the forward direction of the passage, includes the lens unit, and is at a position different from a position of the first plane are set, a first area to which a terahertz wave from the transmission unit reflected from the first plane is emitted and the lens unit are disposed at positions different from each other on the second plane.

Abstract: A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Abstract: A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

Abstract: A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

Abstract: Provided is an element that can reduce a parasitic oscillation.

Abstract: Provided is an element that can reduce a parasitic oscillation.

Abstract: A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Abstract: A movable body includes an imaging system which acquires an image formed by a terahertz wave, wherein the image is an image obtained by capturing an inspection object inside the movable body.

Abstract: A camera system is provided. The camera system is arranged to form a part of a monitoring system arranged in a place of a facility where an inspection object lines up. The camera system comprises an imaging system configured to acquire an image formed by a terahertz wave reflected by the inspection object.

Abstract: A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Abstract: An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency fLC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.

Abstract: Provided is an element that can reduce a parasitic oscillation.

Abstract: An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency fLC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.

Abstract: An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency fLC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.

Abstract: A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

Abstract: A sensor to detect information on a subject by using an electromagnetic wave includes a transmitting unit having a generating element and a first antenna, a polarization converting unit, and a receiving unit having a second antenna and a detecting device. The generating element generates an electromagnetic wave, and the first antenna emits the electromagnetic wave generated by the generating element as first polarization. The polarization converting unit converts the first polarization into second polarization by changing a polarization direction of the first polarization. The second antenna receives the second polarization, and the detecting device detects the electromagnetic wave received by the second antenna. The transmitting unit and the receiving unit are disposed on the same substrate.

Abstract: An element, including: a first conductor layer extending in a first direction; a second conductor layer extending in the first direction; and a semiconductor disposed between the first and second conductor layers, the semiconductor including: a first semiconductor layer in contact with the first conductor layer; a second semiconductor layer in contact with the second conductor layer; and an active layer disposed between the first and second semiconductor layers, in which: the semiconductor has a width of 0.5 ?m or more and 5 ?m or less in a direction intersecting the first and second directions, and has a thickness of 0.1 ?m or more and 1.0 ?m or less in the second direction; the active layer includes a double-barrier resonant tunnel diode; and each of the two barrier layers has a thickness of 0.7 nm or more and 2.0 nm or less in the second direction.

Abstract: A Schottky barrier diode includes a first semiconductor layer, a LOCOS layer arranged in contact with the first semiconductor layer, a Schottky junction region provided on a contact surface between the first semiconductor layer and a first electrode, a second semiconductor layer connected to the first semiconductor layer and having a higher carrier concentration than that of the first semiconductor layer, and a second electrode forming an ohmic contact with the second semiconductor layer. In this case, the Schottky junction region and the LOCOS layer are in contact.

Abstract: A Schottky barrier diode includes a first semiconductor layer, a LOCOS layer arranged in contact with the first semiconductor layer, a Schottky junction region provided on a contact surface between the first semiconductor layer and a first electrode, a second semiconductor layer connected to the first semiconductor layer and having a higher carrier concentration than that of the first semiconductor layer, and a second electrode forming an ohmic contact with the second semiconductor layer. In this case, the Schottky junction region and the LOCOS layer are in contact.