Abstract: A semiconductor device including a gate located over a semiconductor substrate and a source/drain region located adjacent the gate. The source/drain region is bounded by an isolation structure that includes a constricted current passage between the gate and the source/drain region.

Abstract: A semiconductor device including a gate located over a semiconductor substrate and a source/drain region located adjacent the gate. The source/drain region is bounded by an isolation structure that includes a constricted current passage between the gate and the source/drain region.

Abstract: A circuit for defining a voltage potential of a floating well in which is formed at least one metal-oxide-semiconductor device includes a sense circuit operative to detect a voltage at a node to which the floating well is connected and to generate a control signal indicative of whether the voltage at the node is substantially within a voltage range. A lower value of the voltage range is substantially equal to a threshold voltage below a first supply voltage of the circuit. An upper value of the voltage range is substantially equal to a threshold voltage above the first supply voltage. The circuit for defining the voltage potential of the floating well further includes a voltage generator circuit operative to receive the control signal and to generate a bias signal for setting a voltage potential of the well in response to the control signal, the bias signal being controlled throughout the voltage range.

Abstract: A circuit for defining a voltage potential of a floating well in which is formed at least one metal-oxide-semiconductor device includes a sense circuit operative to detect a voltage at a node to which the floating well is connected and to generate a control signal indicative of whether the voltage at the node is substantially within a voltage range. A lower value of the voltage range is substantially equal to a threshold voltage below a first supply voltage of the circuit. An upper value of the voltage range is substantially equal to a threshold voltage above the first supply voltage. The circuit for defining the voltage potential of the floating well further includes a voltage generator circuit operative to receive the control signal and to generate a bias signal for setting a voltage potential of the well in response to the control signal, the bias signal being controlled throughout the voltage range.

Abstract: A buffer circuit operative at multiple power supply voltage levels includes first and second buffers, the first buffer being configured for operation with a first voltage source and the second buffer being operative with a second voltage source. The buffer circuit further includes a controllable isolation circuit. An output of the first buffer connects to an external pad of the buffer circuit, and an output of the second buffer connects to the pad via the isolation circuit. The buffer circuit is selectively operative in at least a first mode or a second mode in response to at least a first control signal. The isolation circuit is operative in the first mode to substantially isolate the second buffer from the external pad and is operative in the second mode to connect the output of the second buffer to the external pad.

Abstract: A voltage level translator circuit is selectively operable in one of at least two modes in response to a control signal. In a first mode, the voltage level translator circuit is operative to translate an input signal referenced to a first source providing a first voltage to an output signal referenced to a second source providing a second voltage. In a second mode, the voltage level translator circuit is operative to provide a signal path from an input of the voltage translator circuit to an output thereof without translating the input signal. The control signal is indicative of a difference between the first voltage and the second voltage.

Abstract: An ESD clamp circuit for use between separate power rails. An ESD clamp is based on a wide nMOSFET. A symmetrical circuit is designed vis-à-vis the two power rails, with respect to ground, allowing discharge of an ESD surge in both polarities of stress. An nMOSFET device drives the gate of a large nMOSFET (e.g., having a device width between 1000 and 10,000 microns). The large power rail-to-power rail nMOSFET has its gate controlled by the output inverter stage of either ESD detection circuit connected to a respective power supply rail. The gate is switched to a common ground during normal operation of the integrated circuit.

Abstract: A voltage level translator circuit is selectively operable in one of at least two modes in response to a control signal. In a first mode, the voltage level translator circuit is operative to translate an input signal referenced to a first source providing a first voltage to an output signal referenced to a second source providing a second voltage. In a second mode, the voltage level translator circuit is operative to provide a signal path from an input of the voltage translator circuit to an output thereof without translating the input signal. The control signal is indicative of a difference between the first voltage and the second voltage.

Abstract: An ESD protection circuit for protecting a circuit from an ESD event occurring between a first voltage supply node and a second voltage supply node associated with the circuit to be protected includes an MOS device having a gate terminal, a first source/drain terminal and a second source/drain terminal. The first source/drain terminal is connected to the first voltage supply node and the second source/drain terminal is connected to the second voltage supply node. The ESD protection circuit further includes a trigger circuit coupled to the gate terminal of the MOS device. The trigger circuit is configured to generate a control signal at the gate terminal of the MOS device for activating the MOS device during the ESD event.

Abstract: A semiconductor resistor comprises a resistor body formed on a semiconductor substrate and first and second conductive terminals electrically connected to the resistor body at opposite ends thereof. The semiconductor resistor further includes at least first and second conductive paths between at least one of the first and second conductive terminals and the resistor body. The at least one conductive terminal is configured such that a resistance of the at least one conductive terminal between the at least first and second conductive paths is substantially matched to a resistance of the resistor body between the at least first and second conductive paths. In this manner, a current distribution between the at least first and second conductive paths is substantially matched.

Abstract: A low voltage, 5V tolerant open drain output buffer having moderate current tolerance capabilities is formed with 3.3V technology using a nominal power supply of 2.5V or less. The buffer includes an inverter, a series connection of the current paths of three n-channel FET transistors, and a backgate bias generator. One terminal of the series connection of three transistors is connected to a PAD, and the other terminal of the lower transistor of the series is connected to ground. The bias generator is formed using two p-channel field effect transistors (FETs) that are cross-connected between VDD and the PAD. A gate of a central one of the three transistors is connected to the power supply. An output of the bias generator is connected to a gate of the upper transistor. The inventive buffer may be manufactured using standard 3.3V processes, but functions with a power supply of, e.g., 2.5V or 1.8V.

Abstract: Using at best a 2.5V nominal power supply, 3.3V technology can be used to implement a 5V tolerant open drain output buffer. High voltage and/or current tolerance is achieved with only the 2.5V power supply. A p-channel FET transistor is connected between a power supply and a node, which in turn is connected to a node between two series output FET transistors. The first transistor is connected between the PAD and node, and the second transistor is connected between the node and ground. The gate of the second transistor is driven from another node formed between a series string of a p-channel FET transistor and an n-channel FET transistor. The other side of the first transistor is connected to the power supply, and the other side of the second transistor is connected to ground. The gates of the transistors of the inverter are tied together and driven by an applied signal.

Abstract: Protection is provided against electrical surges resulting from Electrical Over Stress conditions, e.g., when interfacing circuits with powered connections. An EOS shunt is activated for as long as the EOS condition exists. EOS protection using an EOS shunt in accordance with the principles of the present invention remains activated by a voltage threshold trigger as long as necessary. In a disclosed embodiment, an EOS shunt includes a voltage threshold detector that detects a voltage on a power bus with respect to a ground rail exceeding a predetermined amount, e.g., 5 volts in a device powered at 3.3 volts. During the EOS event, a path between power and ground comprising a transistor is turned on.

Abstract: A semiconductor resistor comprises a resistor body formed on a semiconductor substrate and first and second conductive terminals electrically connected to the resistor body at opposite ends thereof. The semiconductor resistor further includes at least first and second conductive paths between at least one of the first and second conductive terminals and the resistor body. The at least one conductive terminal is configured such that a resistance of the at least one conductive terminal between the at least first and second conductive paths is substantially matched to a resistance of the resistor body between the at least first and second conductive paths. In this manner, a current distribution between the at least first and second conductive paths is substantially matched.

Abstract: Using at best a 2.5V nominal power supply, 3.3V technology can be used to implement a 5V tolerant open drain output buffer. High voltage and/or current tolerance is achieved with only the 2.5V power supply. A p-channel FET transistor is connected between a power supply and a node, which in turn is connected to a node between two series output FET transistors. The first transistor is connected between the PAD and node, and the second transistor is connected between the node and ground. The gate of the second transistor is driven from another node formed between a series string of a p-channel FET transistor and an n-channel FET transistor. The other side of the first transistor is connected to the power supply, and the other side of the second transistor is connected to ground. The gates of the transistors the inverter are tied together and driven by an applied signal.

Abstract: A low voltage, 5V tolerant open drain output buffer having moderate current tolerance capabilities is formed with 3.3V technology using a nominal power supply of 2.5V or less. The buffer includes an inverter, a series connection of the current paths of three n-channel FET transistors, and a backgate bias generator. One terminal of the series connection of three transistors is connected to a PAD, and the other terminal of the lower transistor of the series is connected to ground. The bias generator is formed using two p-channel field effect transistors (FETs) that are cross-connected between VDD and the PAD. A gate of a central one of the three transistors is connected to the power supply. An output of the bias generator is connected to a gate of the upper transistor. The inventive buffer may be manufactured using standard 3.3V processes, but functions with a power supply of, e.g., 2.5V or 1.8V.

Abstract: An integrated circuit device comprising a die having a top surface with a peripheral region and an interior region surrounded by the peripheral region. Bond pads are disposed in the peripheral region of the die. One or more internal buses are disposed in the interior region of the die. The one or more internal buses distribute power to internal node points of the die. One or more bond wires connect one or more peripheral bond pads with one or more internal buses.

Abstract: A bond pad is located over active circuitry formed within an integrated circuit device. A barrier film forms the bottom surface of the upper portion of a bond pad opening which also includes vias extending through the bottom surface to form a dual damascene structure. The bond pad is resistant to stress effects such as cracking, which can be produced when bonding an external wire to the bond pad, and therefore prevents leakage currents between the bond pads and the underlying circuitry.

Abstract: A semiconductor device including a gate located over a semiconductor substrate and a source/drain region located adjacent the gate. The source/drain region is bounded by an isolation structure that includes a constricted current passage between the gate and the source/drain region.

Abstract: An integrated circuit that includes I/O circuitry that may or may not be protected from ESD damage. The protection from ESD damage may be selectively deactivated or activated or may not be present at all in one or more of the I/O circuits. In use, the integrated circuit may be coupled to another integrated circuit to form a multi-chip module where the ESD protection for the I/O circuitry between the modules is deactivated or not present. This is advantageous because the likelihood of ESD damage to this I/O circuitry is reduced once the multi-chip module is formed. It is to be understood that both the foregoing general description and the following detailed description are exemplary, but are not restrictive, of the invention.