Abstract: A method for repairing phase defects for an extreme ultraviolet (EUV) mask is disclosed. The method includes receiving a patterned EUV mask with at least one phase-defect region, determining location and size of the phase-defect region, depositing an absorber material to cover the phase-defect region and removing a portion of the patterned absorption layer near the phase-defect region in the patterned EUV mask to form an absorber-absent region.

Abstract: A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle ? is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.

Abstract: A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.

Abstract: A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence ? less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

Abstract: A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence ? less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

Abstract: A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence ? less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

Abstract: A method for forming a localized surface plasmon resonance (LSPR) sensor is disclosed, including providing a substrate, forming a metal thin film on the substrate and irradiating the metal thin film with a laser to form a plurality of metal nanoparticles, wherein the metal nanoparticles have a fixed orientation.

Abstract: A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm.

Abstract: The invention provides a light-emitting device, comprising a light-emitting element and a surface plasmon coupling element connected to the light-emitting element. In an embodiment of the invention, the surface plasmon coupling element comprises a dielectric layer connected to the light-emitting element and a metal layer on the dielectric layer. In another embodiment of the invention, the light-emitting device is a light-emitting diode, comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer, and a surface plasmon coupling element adjacent to the n-type semiconductor layer. In a further embodiment of the invention, a current spreading layer on a second type semiconductor layer of the light-emitting device includes a plurality of strip-shaped structures, and the surface plasmon coupling element is disposed on the current spreading layer and filled into the gap between the strip-shaped structures of the current spreading layer.

Abstract: A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.

Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.