Abstract: A method for manufacturing a radiation detection apparatus is provided. The method comprising: forming a set of columnar crystals capable of converting radiation into visible light on a base; forming a supporting layer that supports the set of columnar crystals; separating the set of columnar crystals supported by the supporting layer from the base; preparing a sensor panel having a photoelectric conversion unit; and adhering a surface of the set of columnar crystals, that surface having been in contact with the base, to the sensor panel using an adhesive material, such that the set of columnar crystals covers the photoelectric conversion unit.

Abstract: A liquid crystal apparatus includes a display region in which electrodes are disposed in a matrix pattern, a non-display region provided at a periphery of the display region, and a liquid crystal disposed in the display region and non-display region. The liquid crystal disposed in the display region is splay-aligned when a voltage is not applied and bend-aligned when the voltage is applied. The liquid crystal disposed in the non-display region is bend-aligned. The apparatus also includes an alignment film including an inorganic material provided in at least one of a pair of substrates. The thickness of the alignment film provided in the display region is smaller than the thickness of the alignment film provided in the non-display region.

Abstract: A radiation detection apparatus comprising: a sensor panel including a photoelectric conversion region and an electrically conductive pattern that is electrically connected to the photoelectric conversion region; a scintillator layer disposed over the photoelectric conversion region of the sensor panel; a wiring member including a portion overlapping with the electrically conductive pattern and electrically connected to the electrically conductive pattern and; and a protective film covering the scintillator layer and the portion of the wiring member that overlaps with the electrically conductive pattern is provided. A region of the protective film that covers the wiring member includes a portion that is press-bonded to the sensor panel.

Abstract: A radiation detection apparatus including: a sensor panel having a first face on which a pixel region is formed and a second face that is opposite the first face and including a connecting portion at one or more sides; a scintillator layer formed over the pixel region; and a protective film covering the scintillator layer and a portion of the sensor panel is provided. The protective film has a hot-pressed part. At the side of the sensor panel where the connecting portion is formed, the hot-pressed part is formed in a portion of the protective film covering the first face. At other sides of the sensor panel, the hot-pressed part is formed in at least one of a portion of the protective film covering a lateral face of the sensor panel and the second face.

Abstract: A radiation detector includes a sensor panel including a photodetector and peripheral circuitry, the photodetector includes a two-dimensional array of photoelectric conversion elements arranged on a substrate, the peripheral circuitry is electrically connected to the photoelectric conversion elements and is disposed on the periphery of the photodetector; a scintillator layer is disposed on the photodetector of the sensor panel, the scintillator layer converts radiation into light that is detectable by the photoelectric conversion elements; a scintillator protection member covers the scintillator layer; and a sealing resin seals the scintillator layer, the sealing resin is disposed between the sensor panel and the scintillator protection member on the periphery of the scintillator layer; the sealing resin is disposed on top of the peripheral circuitry; and particles containing a radiation-absorbing material are dispersed in the sealing resin.

Abstract: A scintillator panel includes a substrate and a scintillator layer. The substrate includes a first plate having a surface provided with irregularities, and a flat second plate fixed to the first plate in a confronting relation to the irregularities of the first plate. The scintillator layer is disposed on a surface of the second plate on the side oppositely away from the first plate.

Abstract: A radiographic imaging apparatus includes a sensor panel having an effective pixel region and a peripheral region surrounding the effective pixel region; a scintillator layer disposed on the effective pixel region and the peripheral region of the sensor panel; and a scintillator protecting layer disposed on the scintillator layer. The scintillator layer includes a plurality of columnar crystals disposed on the effective pixel region, a plurality of columnar crystals disposed on the peripheral region, and a resin disposed between the plurality of the columnar crystals on the peripheral region and surrounding the plurality of the columnar crystals on the effective pixel region. The plurality of the columnar crystals on the effective pixel region is enclosed by the sensor panel, the scintillator layer, and the resin.

Abstract: An image pickup apparatus includes an insulating substrate, and a plurality of pixels each including a conversion element configured to convert incident light or radiation into a charge and also including a switch element configured to transfer an electric signal corresponding to the charge generated by the conversion element. Gate wiring is configured to drive the switch element to transfer the electric signal through signal wiring. The plurality of pixels, the signal wiring, and the gate wiring are disposed on one surface of the insulating substrate. The insulating substrate has vias that provide electrical connections between the one surface and an opposite surface of the insulating substrate.

Abstract: The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.

Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

Abstract: A film forming method is constituted by forming a silicon oxide film on a substrate by causing silicon generated by sputtering with silicon as a target to be incident on the substrate from an oblique direction while supplying oxygen gas onto the substrate.

Abstract: A method of forming a film on a substrate is constituted by a step of depositing a material vaporized from an evaporation source onto a surface of a substrate while inclining the surface of the substrate with respect to a direction from the evaporation source to the substrate, and a step of providing the surface of the substrate with an energy depending on a deposition angle.

Abstract: A sensor comprising a semiconductor film having a plurality of mesopores and containing an oxide, and electrodes electrically connected to the semiconductor film, wherein at least part of surfaces in the mesopores is coated with an organic material.

Abstract: A sensor comprising a semiconductor film having a plurality of mesopores and containing an oxide, and electrodes electrically connected to the semiconductor film, wherein at least part of surfaces in the mesopores is coated with an organic material.

Abstract: The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.

Abstract: A sensor comprising a semiconductor film having a plurality of mesopores and containing an oxide, and electrodes electrically connected to the semiconductor film, wherein at least part of surfaces in the mesopores is coated with an organic material.

Abstract: Provided is a liquid crystal apparatus that includes a display region in which electrodes are disposed in a matrix pattern and a non-display region provided at a periphery of the display region and has a liquid crystal disposed in the display region and non-display region, wherein the liquid crystal disposed in the display region is splay-aligned when a voltage is not applied and bend-aligned when the voltage is applied, the liquid crystal disposed in the non-display region is bend-aligned, an alignment film including an inorganic material is provided in at least one of a pair of substrates, and a thickness of the alignment film provided in the display region is smaller than a thickness of the alignment film provided in the non-display region.

Abstract: A method for producing an orientation film that causes orientation of a liquid crystal includes a process of vapor depositing an inorganic oxide from an oblique direction on a substrate and forming an obliquely vapor-deposited film composed of a plurality of columnar structural bodies tilted at an angle equal to or greater than 20° from a substrate normal and a process of performing ion beam irradiation onto the plurality of columnar structural bodies constituting the obliquely vapor-deposited film. An ion beam irradiation direction in the ion beam irradiation process is in a plane including a vapor deposition direction of the inorganic oxide and the substrate normal and an angle of the ion beam irradiation direction ?IB measured from the direction of the columnar structural bodies is within a range of +50°??IB?+100° (?IB is taken to be positive on a side where the ion beam irradiation direction approaches the substrate normal from the direction of the columnar structural bodies).

Abstract: A liquid crystal device has a pair of substrates, an alignment film formed at least on one of the pair of substrates and liquid crystal showing an orientation defined by the alignment film. The alignment film is a carbon film having a cross-sectional structure inclined relative to the direction of the film thickness by a constant angle.

Abstract: In a method of forming on a substrate a film of a substance by depositing the substance vaporized from an evaporation source on the substrate in an oblique direction, a deposition rate of the substance is changed depending on a position on the substrate so that the deposition rate of the substance is higher at the position in which the deposition angle is larger.