Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

Abstract: Embodiments described herein relate to flat optical devices with a coating layer including monolayers selected from the group consisting of molybdenum disulfide (MoS2), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), titanium disulfide (TlS2), zirconium disulfide (ZrS2), zirconium diselenide (ZrSe2), hafnium disulfide (HfS2), platinum disulfide (PtS2), tin disulfide (SnS2), or combinations thereof. The coating layer is disposed over a plurality of optical device structures of the optical device. The monolayers may alternate between the materials to form the coating layer or may be a uniform coating layer of a single material. The coating layer is disposed over each optical device structure of the plurality of optical device structures.

Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: A system, software application, and method for optical device metrology of optical device patterns formed from lithography stitching are provided. In one example, the method includes creating a stitched design file comprising images of a plurality of masks; defining target coordinates for each of the plurality of masks in the stitched design file; defining an alignment mark for the stitched design file; capturing images of an optical device pattern at each of the target coordinates; comparing the captured images of the optical device pattern at each of the target coordinates to virtual images of the stitched design file at each of the target coordinates; and determining whether the optical device pattern at each of the target coordinates meets a threshold value.

Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

Abstract: A method for aligning a substrate for fabrication of an optical device is disclosed that includes receiving a substrate having a first side and a second side opposite the first side, the first side of the substrate being oriented towards a scanner, the substrate having an alignment mark formed on the first side of the substrate, scanning the alignment mark with the scanner, and fabricating a first pattern for a first optical device on the first side of the substrate. The method includes positioning the substrate such that the second side is oriented toward the scanner, scanning the alignment mark on the first side with the scanner, through the second side, and fabricating a second pattern for a fourth optical device on the second side of the substrate.

Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

Abstract: A method of forming patterned features on a substrate is provided. The method includes: positioning a first mask over a first portion of a substrate; directing radiation through the patterned area of the first mask at the first portion of the substrate to form a first patterned region on the substrate; positioning a second mask over a second portion of the substrate, the second mask including a first patterned area and a second patterned area, the first patterned area spaced apart from the second patterned area by an unpatterned area; directing radiation through the first patterned area of the second mask at a first part of the second portion of the substrate to form a second patterned region on the substrate; and directing radiation through the second patterned area of the second mask at a second part of the second portion of the substrate to form a third patterned region.

Abstract: A semiconductor device includes a stack structure having at least first, second and third interconnect levels. Each interconnect level has a patterned metal conductor including a first metallic material. A via spans the second and third interconnect levels and electrically couples with the patterned metal conductor of the first interconnect level. At least a segment of the super via includes a second metallic material different from the first metallic material.

Abstract: Embodiments of the present disclosure relate to optical device fabrication using methods of discrete grating assembly and optical interconnection. Discrete gratings corresponding to one of an input coupling grating, an intermediate grating, or an output coupling grating of an optical device are formed on separated donor substrates. The donor substrates are diced into individual gratings and adhered to an optical device substrate. An inkjet material is disposed between the gratings to optically interconnect the portions of the optical device.

Abstract: Methods of forming a resist model for angled gratings on optical devices. In one example, a method includes designing a model with a model area and a verification area with initial mask patterns having a first grating pattern with a first angle and a first critical dimension and fabricating test masks with the model area having a first model angle and a first model critical dimension and the verification area having a first verification angle and a first verification critical dimension. The method also includes patterning a substrate with the test masks, measuring the first model angle, the first model critical dimension, the first verification angle and the first verification critical dimension, and fabricating a new device mask if the first verification angle is within the threshold range of the first desired angle and the first verification critical dimension is within the threshold range of the first desired critical dimension.

Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

Abstract: Embodiments of the present disclosure generally relate to methods for forming features having small and large line widths on the same substrate or device. In some embodiments, the methods described and discussed herein can be used to produce optical and photonic devices. These devices, including augmented reality (AR) devices and/or virtual reality (VR) devices, have desired pattern areas with different features and/or line widths to achieve the desired optical performance.

Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

Abstract: An imaging system and a method of creating composite images are provided. The imaging system includes one or more lens assemblies coupled to a sensor. When reflected light from an object enters the imaging system, incident light on the metalens filter systems creates filtered light, which is turned into composite images by the corresponding sensors. Each metalens filter system focuses the light into a specific wavelength, creating the metalens images. The metalens images are sent to the processor, wherein the processor combines the metalens images into one or more composite images. The metalens images are combined into a composite image, and the composite image has reduced chromatic aberrations.

Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

Abstract: Embodiments described herein provide method a method of forming optical devices using nanoimprint lithography that maintains the critical dimension of the optical device structures. The method described herein accounts for lateral shrinkage of the solvent based resist during the cure process to maintain the critical dimension. The method includes disposing a stamp coating on a stamp having an inverse optical device pattern of inverse structures. The coating is disposed on sidewalls, inverse structure bottom, and inverse structure top of the inverse structures. The method includes etching the inverse structures such that the stamp coating remains on the sidewalls and is removed from the inverse structure top and bottom. The method further includes imprinting the stamp into an optical device material disposed and subjecting the imprintable optical device material to a cure process which transfers the optical device critical dimension to the optical device structures of the optical device pattern.

Abstract: In one embodiment, a method of fabricating a device having at least two features of differing heights comprises: depositing a resist over a substrate; determining a topography pattern for the at least two features of the device; determining an exposure pattern for the at least two features of the device; exposing a first area of the resist with a first dose of light, the first area corresponding to a first feature of the at least two features; exposing a second area of the resist with a second dose of light that is different from the first dose of light, the second area corresponding to a second feature of the at least two features; and developing the resist.