Abstract: In order to prevent cracking of a window material in manufacturing an optical measurement cell that satisfies various performances required for airtightness, heat resistance, and the like by atomic diffusion bonding, an optical measurement cell into which a sample is introduced includes a light transmission window through which light is transmitted, and includes a window material forming the light transmission window, and a flange member to which the window material is bonded via a metal thin film, and a ratio of a thermal expansion coefficient of the flange member to a thermal expansion coefficient of the window material is 0.5 times or more and 1.5 times or less.

Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.

Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.

Abstract: Linear ribs are formed radially with a center at a through-hole on one face of an X-ray transmissive film (radiolucent film) in an X-ray transmissive window (radiolucent window) to be used for an X-ray detector (radiation detector). The X-ray transmissive window faces a sample. A beam for irradiation to the sample passes through the through-hole, and X-rays (radiation) are radially emitted on a line extending through the through-hole and enter the X-ray transmissive window. Since the linear ribs are formed radially with the center at the through-hole, even X-rays entering at shallow angles with respect to the X-ray transmissive window are transmitted through the X-ray transmissive window at a probability equivalent to X-rays entering at deep angles. More X-rays are transmitted through the X-ray transmissive window, and thus the X-ray detector can detect X-rays with high efficiency.

Abstract: Linear ribs are formed radially with a center at a through-hole on one face of an X-ray transmissive film (radiolucent film) in an X-ray transmissive window (radiolucent window) to be used for an X-ray detector (radiation detector). The X-ray transmissive window faces a sample. A beam for irradiation to the sample passes through the through-hole, and X-rays (radiation) are radially emitted on a line extending through the through-hole and enter the X-ray transmissive window. Since the linear ribs are formed radially with the center at the through-hole, even X-rays entering at shallow angles with respect to the X-ray transmissive window are transmitted through the X-ray transmissive window at a probability equivalent to X-rays entering at deep angles. More X-rays are transmitted through the X-ray transmissive window, and thus the X-ray detector can detect X-rays with high efficiency.

Abstract: Linear ribs are formed radially with a center at a through-hole on one face of an X-ray transmissive film (radiolucent film) in an X-ray transmissive window (radiolucent window) to be used for an X-ray detector (radiation detector). The X-ray transmissive window faces a sample. A beam for irradiation to the sample passes through the through-hole, and X-rays (radiation) are radially emitted on a line extending through the through-hole and enter the X-ray transmissive window. Since the linear ribs are formed radially with the center at the through-hole, even X-rays entering at shallow angles with respect to the X-ray transmissive window are transmitted through the X-ray transmissive window at a probability equivalent to X-rays entering at deep angles. More X-rays are transmitted through the X-ray transmissive window, and thus the X-ray detector can detect X-rays with high efficiency.

Abstract: A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer.

Abstract: A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blende type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity.

Abstract: A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blend type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity.

Abstract: Linear ribs are formed radially with a center at a through-hole on one face of an X-ray transmissive film (radiolucent film) in an X-ray transmissive window (radiolucent window) to be used for an X-ray detector (radiation detector). The X-ray transmissive window faces a sample. A beam for irradiation to the sample passes through the through-hole, and X-rays (radiation) are radially emitted on a line extending through the through-hole and enter the X-ray transmissive window. Since the linear ribs are formed radially with the center at the through-hole, even X-rays entering at shallow angles with respect to the X-ray transmissive window are transmitted through the X-ray transmissive window at a probability equivalent to X-rays entering at deep angles. More X-rays are transmitted through the X-ray transmissive window, and thus the X-ray detector can detect X-rays with high efficiency.

Abstract: A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer.

Abstract: A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blende type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity.

Abstract: A semiconductor laser includes a semiconductor nanowire of a first conductivity type provided over a substrate, a light emitting layer provided around the semiconductor nanowire and insulated at an upper end and a lower end thereof, a cladding layer of a second conductivity type different from the first conductivity type, the cladding layer being provided at an outer periphery of the light emitting layer, a first electrode electrically coupled to an end portion of the semiconductor nanowire, a second electrode electrically coupled to an outer periphery of the cladding layer, a first reflection mirror provided at a one-end portion side of the semiconductor nanowire, and a second reflection mirror provided at the other end portion side of the semiconductor nanowire.

Abstract: A semiconductor laser includes a semiconductor nanowire of a first conductivity type provided over a substrate, a light emitting layer provided around the semiconductor nanowire and insulated at an upper end and a lower end thereof, a cladding layer of a second conductivity type different from the first conductivity type, the cladding layer being provided at an outer periphery of the light emitting layer, a first electrode electrically coupled to an end portion of the semiconductor nanowire, a second electrode electrically coupled to an outer periphery of the cladding layer, a first reflection mirror provided at a one-end portion side of the semiconductor nanowire, and a second reflection mirror provided at the other end portion side of the semiconductor nanowire.

Abstract: An optical recording medium includes: a substrate; an information recording layer formed on the substrate for recording and reproducing an information signal by irradiation with light; and a light transmission layer formed on the information recording layer and transmitting the light, the storage elastic modulus of the light transmission layer at ?5° C. being within a range of 1500 MPa or less.

Abstract: In a resin granulating apparatus of the present invention, a bracket extending in the outward radial direction over an outer peripheral surface of a sleeve is provided for the sleeve for rotatably supporting a cutter shaft of a cutter for shearing a material extruded from a die. Stopper means cooperating with the bracket to regulate movement of the sleeve toward the die and moving a regulation position in the axial direction is provided on the radially outer side over an outer diameter of the sleeve. With such a configuration, installation space is compactified so as to additionally provide the stopper means in the existing facilities, and a position of the cutter relative to a die surface is precisely adjusted so as to stably produce a pellet of a best shape.

Abstract: The purpose of the present invention is to provide a screen unit which allows for eliminating rigorous dimension control for preventing the short path phenomenon of material and which has cost advantages, and a screen changer equipped with the same. In the screen unit, a cartridge body (30) includes a hole-formed portion (15) having a plurality of through holes (12) through which the material filtered by a screen pack (14) is allowed to pass; and a contacted outer surface (21) which is provided closer to a base end side than to the hole-formed portion (15) and inclined so as to expand radially outwardly with decreasing distance to the base end. The screen pack (14) has a contacting inner surface (22) which can closely contact with the contacted outer surface (21) of a cartridge (13) when being pressed from a tip end side toward the base end with the hole-formed portion (15) covered from outside.

Abstract: Provided is a knife holder (10) for use with an underwater cutting pelletizing device which includes a die plate (40) and the knife holder (10). The die plate (40) includes an annular projected portion (52) and a plurality of die holes (51) having an opening on the projected portion (52). The knife holder (10) holds a plurality of knives (30) which slide on the surface of the projected portion (52) to thereby cut melt resin, which has been pushed through each of the die holes (51), into resin pellets in cooling water. The knife holder (10) can reduce the deflection of the knife (30) and thereby the gap that appears between the sliding plane thereof and the die plate projected portion (52). The knife holder (10) includes a knife holder body (11) and a plurality of rib portions (12). The knife holder body (11) has an outer circumference end (11a) which is located inside the inner circumference end of the projected portion (52) of the die plate (40) in the radial direction.

Abstract: This invention provides a semiconductor type gas sensor that can considerably increase the detection sensitivity to low-concentration gases, and can increase the response-recovery speed to achieve a conspicuous improvement in the overall performance, as well as a manufacturing method thereof. This invention is a semiconductor type gas sensor including a semiconductor substrate having a hollow portion in a central part, an insulating film of a diaphragm structure disposed on this substrate to form to cover the hollow portion, a heater formed on this insulating film, a resistance-measuring electrode, and a gas-sensitive film formed on the resistance-measuring electrode, characterized in that the gas-sensitive film is made of monoclinic tungsten oxide containing a hexagonal tungsten oxide crystal.

Abstract: This invention is to obtain a highly reliable measurement result by correcting a hydrogen concentration by the use of a concentration of oxygen contained in a measurement gas, and the hydrogen concentration measuring instrument comprises a hydrogen concentration measuring part 2 that measures the concentration of hydrogen contained in the measurement gas flowing in a flow channel, an oxygen concentration measuring unit 3 that measures a concentration of oxygen contained in the measurement gas, and a concentration correcting unit 73 that corrects the concentration of hydrogen obtained by the hydrogen concentration measuring part 2 by the use of the concentration of oxygen obtained by the oxygen concentration measuring unit 3.