Abstract: An optical recording medium includes: a substrate; an information recording layer formed on the substrate for recording and reproducing an information signal by irradiation with light; and a light transmission layer formed on the information recording layer and transmitting the light, the storage elastic modulus of the light transmission layer at ?5° C. being within a range of 1500 MPa or less.

Abstract: In a resin granulating apparatus of the present invention, a bracket extending in the outward radial direction over an outer peripheral surface of a sleeve is provided for the sleeve for rotatably supporting a cutter shaft of a cutter for shearing a material extruded from a die. Stopper means cooperating with the bracket to regulate movement of the sleeve toward the die and moving a regulation position in the axial direction is provided on the radially outer side over an outer diameter of the sleeve. With such a configuration, installation space is compactified so as to additionally provide the stopper means in the existing facilities, and a position of the cutter relative to a die surface is precisely adjusted so as to stably produce a pellet of a best shape.

Abstract: The present invention provides a combustible gas sensor that can realize a considerable improvement in the measurement sensitivity and the measurement precision by increasing the contact area between the measurement object gas and the oxidation catalyst particles, increasing the amount of heat generation of oxidation reaction in accordance therewith, and improving the transference of the oxidation reaction heat, while reducing the scale of the whole.

Abstract: The light emitting device comprises a substrate 10 of a p-type semiconductor; an active layer 20 formed of a plurality of quantum dot layers 18 stacked, the quantum dot layers 18 having three-dimensional grown islands self-formed by S-K mode, respectively; and an n-type semiconductor layer 22 formed over the active layer. Because of the p-type semiconductor, over which the active layer 20 is formed on, and the n-type semiconductor, which is formed over the active layer 20, lower layer regions of the active layer 20, where good quantum dots 19 are formed are nearer to regions of the active layer 20, which are nearer to the p-type semiconductor. Accordingly, the radiation recombination between the holes and electrons takes place mainly in the regions where those of the quantum dots, which are of good quality. Thus, even when a number of the quantum dot layers 18 are stacked, good device characteristics can be obtained.

Abstract: The optical semiconductor device comprises an active layer including a plurality of quantum dot stacks 18, 22, 26 each of which is formed of a plurality of quantum dot layers 14 and a plurality of first layers 16 alternately stacked, and a plurality of second barrier layers 20, 24 thicker than the first barrier layers 16 stacked alternately with the quantum dot stacks 18, 22, 26. Thus, the quantum dot layers can be stacked with the generation of dislocations due to lattice mismatching between the substrate and the quantum dots suppressed. A number of quantum dot layers can be stacked with a desired light confinement coefficient ensured. The optical semiconductor device can have the characteristics easily improved.

Abstract: A cutter machine has a knife holder 13 mounted onto a cutter shaft 6 at the center portion, wherein a material to be cut is cut with knives 15 mounted onto the outer circumference of the knife holder 13 by rotating the knife holder 13 around the cutter shaft 6. The knife holder 13 is separated into a fixing member 17 mounted onto the cutter shaft 6 and a mounting member 18 onto which the knives 15 are mounted. The mounting member 18 is pivotally supported around two axes with respect to the fixing member 17. In the cutter machine, the knives and a die plate come into contact with each other by a small press force of the knives, thereby enabling a satisfactory cutting to be obtained.

Abstract: A semiconductor light emitting element improving luminous efficiency has: a semiconductor substrate, an N-type cladding layer formed over the substrate; a barrier layer formed over the cladding layer; a quantum dot layer formed over the barrier layer, the quantum dot layer including quantum dots having a band gap smaller than that of the barrier layer and a buried layer having a band gap larger than that of the quantum dots, the buried layer covering a sidewall of the quantum dots; a P-type semiconductor layer formed over the quantum dot layer, the semiconductor layer having a band gap smaller than that of the barrier layer; a barrier layer formed over the P-type semiconductor layer, the barrier layer having a band gap larger than those of the quantum dots and of the semiconductor layer; and a p-type cladding layer formed over the barrier layer. Therefore, holes generated in the P-type semiconductor layer are prevented from flowing into the barrier layer and the buried layer.

Abstract: A novel perfluoropolyether derivative, which has at least one ester bond and is useful as a lubricant with a decomposition temperature of 300° C. or more, is obtained by an esterification reaction between a perfluoropolyether diol having hydroxyl groups at both ends thereof and represented by the formula (1) and a perfluoropolyether dicarboxylic acid having carboxyl groups at both ends thereof and represented by the formula (2): HOCH2—R—CH2OH??(1) HOOC—R?—COOH??(2) wherein each of R and R? is a perfluoroether group.

Abstract: The light emitting device comprises a substrate 10 of a p-type semiconductor; an active layer 20 formed of a plurality of quantum dot layers 18 stacked, the quantum dot layers 18 having three-dimensional grown islands self-formed by S-K mode, respectively; and an n-type semiconductor layer 22 formed over the active layer. Because of the p-type semiconductor, over which the active layer 20 is formed on, and the n-type semiconductor, which is formed over the active layer 20, lower layer regions of the active layer 20, where good quantum dots 19 are formed are nearer to regions of the active layer 20, which are nearer to the p-type semiconductor. Accordingly, the radiation recombination between the holes and electrons takes place mainly in the regions where those of the quantum dots, which are of good quality. Thus, even when a number of the quantum dot layers 18 are stacked, good device characteristics can be obtained.

Abstract: A quantum semiconductor device including quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimizing the in-plane strain and the vertical strain accumulated in a quantum dot.

Abstract: A semiconductor optical device having a substrate having a surface of a first semiconductor having a first lattice constant; and a semiconductor lamination layer formed on the substrate, the semiconductor lamination layer having an active layer which contains quantum dots of a first kind made of a second semiconductor having a second lattice constant in bulk state smaller than the first lattice constant. The active layer may contain quantum dots of a second kind made of a third semiconductor having a third lattice constant in bulk state larger than the first lattice constant. The quantum dots of the first and second kinds are preferably disposed alternately along the thickness direction between the barrier layers having the first lattice constant.

Abstract: A novel perfluoropolyether derivative, which has at least one ester bond and is useful as a lubricant with a decomposition temperature of 300° C. or more, is obtained by an esterification reaction between a perfluoropolyether diol having hydroxyl groups at both ends thereof and represented by the formula (1) and a perfluoropolyether dicarboxylic acid having carboxyl groups at both ends thereof and represented by the formula (2): HOCH2—R—CH2OH??(1) HOOC—R?-COOH??(2) wherein each of R and R? is a perfluoroether group.

Abstract: The optical semiconductor device comprises an active layer including a plurality of quantum dot stacks 18, 22, 26 each of which is formed of a plurality of quantum dot layers 14 and a plurality of first layers 16 alternately stacked, and a plurality of second barrier layers 20, 24 thicker than the first barrier layers 16 stacked alternately with the quantum dot stacks 18, 22, 26. Thus, the quantum dot layers can be stacked with the generation of dislocations due to lattice mismatching between the substrate and the quantum dots suppressed. A number of quantum dot layers can be stacked with a desired light confinement coefficient ensured. The optical semiconductor device can have the characteristics easily improved.

Abstract: The present invention relates to photopolymerizable resin composition inducing substantially no chemical degradation in metals in tight contract with the resin. Further, the present invention relates to optical recording media using the photopolymerizable resins. In one embodiment, a photopolymerizable resin composition includes a photopolymerizable resin based on acrylic ester, and an additive based on at least one selected from the group consisting of benzotriazole and a derivative of benzotriazole, and a photointiator.

Abstract: A quantum semiconductor device includes quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimizing the in-plane strain and the vertical strain accumulated in a quantum dot.

Abstract: A semiconductor optical device has: a substrate having a surface of a first semiconductor having a first lattice constant; and a semiconductor lamination layer formed on the substrate, the semiconductor lamination layer having an active layer which contains quantum dots of a first kind made of a second semiconductor having a second lattice constant in bulk state smaller than the first lattice constant. The active layer may contain quantum dots of a second kind made of a third semiconductor having a third lattice constant in bulk state larger than the first lattice constant. The quantum dots of the first and second kinds are preferably disposed alternately along the thickness direction between the barrier layers having the first lattice constant.

Abstract: A cutter machine having a knife holder 13 mounted onto a cutter shaft 6 at the center portion, wherein a material to be cut is cut with knives 15 mounted onto the outer circumference of the knife holder 13 by rotating the knife holder 13 around the cutter shaft 6, characterized in that the knife holder 13 is separated into a fixing member 17 mounted onto the cutter shaft 6 and a mounting member 18 onto which the knives 15 are mounted, wherein the mounting member 18 is pivotally supported around more than two axes with respect to the fixing member 17. In the cutter machine, the knives and a die plate come into contact with each other by a small press force of the knives without any usage of the resilient effect resulting from a gum bush, a metal plate or the like, thereby enabling a satisfactory cutting to be obtained.

Abstract: A die for manufacturing resin pellets capable of processing a die plate easily, and achieving simplification of a construction of heat channels and enhancement of heating efficiency. A die 1 for manufacturing resin pellets provided with a number of nozzle orifices 7 in the outer surface of the die, there are provided a plurality of rows of heat channels 8 which extend in a direction crossing the resin channels 5 in the vicinity of the outer surface of the die and are arranged along the resin channels 5. At least one of an introducing course and a discharging course for a heat medium in the plurality of heat channels 8.

Abstract: A quantum semiconductor device includes intermediate layers of a first semiconductor crystal having a first lattice constant and stacked repeatedly, and a plurality of quantum dots of a second semiconductor crystal having a second lattice constant different from the first lattice constant. The quantum dots are dispersed in each of the intermediate layers and form a strained heteroepitaxial system with respect to the corresponding intermediate layer. Each of the quantum dots has a height substantially identical with a thickness of the corresponding intermediate layer.

Abstract: The present invention provides photopolymerizable resin compositions inducing no chemical degradation in metals in tight contact therewith and optical recording media using the photopolymerizable resin compositions.