Abstract: A quantum semiconductor memory device includes a quantum structure formed on a substrate, wherein the quantum structure includes a plurality of self-organized quantum dots forming a strained heteroepitaxial system with respect to the substrate and an accumulation layer formed adjacent to the self-organized quantum dots, and wherein the self-organized quantum dots are formed of a semiconductor crystal having a composition set such that quantum levels of the self-organized quantum dots are located higher than a conduction band of the accumulation layer.

Abstract: A die for manufacturing resin pellets capable of processing a die plate easily, and achieving simplification of a construction of heat channels and enhancement of heating efficiency. A die 1 for manufacturing resin pellets provided with a number of nozzle orifices 7 in the outer surface of the die, there are provided a plurality of rows of heat channels 8 which extend in a direction crossing the resin channels 5 in the vicinity of the outer surface of the die and are arranged along the resin channels 5. At least one of an introducing course and a discharging course for a heat medium in the plurality of heat channels 8.

Abstract: A wavelength-domain-multiplication memory comprises a first semiconductor layer including a first conductivity type impurity, a carrier barrier semiconductor layer formed on the first semiconductor layer, and quantum dots formed in the carrier barrier semiconductor layer.

Abstract: A semiconductor integrated circuit device including: an off-substrate having a semiconductor surface with a plurality of steps each having a height of one monolayer and extending in one direction; a wiring layer formed on the semiconductor surface of the off-substrate and made of semiconductor material, the wiring layer including a plurality of conductive stripe regions and high resistance strip regions disposed in a stripe pattern, each stripe region extending in a direction parallel with the steps, and the conductive stripe regions and the high resistance stripe regions both having lattice structures identical to those of underlying surfaces; and semiconductor elements formed on the wiring layer and electrically connected to the conductive stripe regions, the semiconductor elements including semiconductor regions with lattice structures identical to those of the conductive stripe regions.

Abstract: An optical semiconductor device includes a plurality of quantum structures in an active layer thereof, wherein each of the quantum structures is confined in at least two of the three, mutually perpendicular dimensions, and wherein at least two of the quantum structures are separated with a distance that allows tunneling of carriers therebetween.

Abstract: A filter member includes a breaker plate having an increased filtering area without any deterioration in screen back-up capability. This filter member is adapted to filter off impurities of resin melt and is disposed in a resin passage. The filter member includes a screen and a breaker plate for backing up the screen. The breaker plate has resin passageways in the form of elongated slits extending as intersecting the flow direction of resin material.

Abstract: A semiconductor integrated circuit device including: an off-substrate having a semiconductor surface with a plurality of steps each having a height of one monolayer and extending in one direction; a wiring layer formed on the semiconductor surface of the off-substrate and made of semiconductor material, the wiring layer including a plurality of conductive stripe regions and high resistance strip regions disposed in a stripe pattern, each stripe region extending in a direction parallel with the steps, and the conductive stripe regions and the high resistance stripe regions both having lattice structures identical to those of underlying surfaces; and semiconductor elements formed on the wiring layer and electrically connected to the conductive stripe regions, the semiconductor elements including semiconductor regions with lattice structures identical to those of the conductive stripe regions.

Abstract: On a substrate having a surface slightly tilted by an angle .alpha. within the range of from 0.5 to 10 degrees from the (110) plane in the <00-1> direction, a superlattice structure having a periodicity in both <110> and <001> directions is formed. Various band structures are possible by selecting an appropriate constituent material and periodicity for the superlattice structure. When current flows in a direction without periodicity, a very high mobility is obtained as a result of suppressed alloy scattering. If current is caused to flow in a direction with periodicity, and the periodicity is properly selected, optical phonon scattering can also be suppressed.

Abstract: An active layer having a predetermined effective band gap, a predetermined effective refractive index, and a predetermined thickness is sandwiched between a first clad layer and a second clad layer. Each of the clad layers has an effective band gap wider than that of the active layer, an effective refractive index lower than that of the active layer, and a predetermined thickness. On the first clad layer, there is disposed a first stack structure doped to a first conductivity type, which alternately includes a layer of a high refractive index and a layer of a low refractive index, and has a discontinuity of a band of the first conductivity type made quite smaller than that of a band of a second conduction type.

Abstract: A filter member includes a breaker plate having an increased filtering area without any deterioration in screen back-up capability. This filter member is adapted to filter off impurities of resin melt and is disposed in a resin passage. The filter member includes a screen and a breaker plate for backing up the screen. The breaker plate has resin passageways in the form of elongated slits extending as intersecting the flow direction of resin material.