Abstract: A display device includes a display panel and an ion generator for generating positive ions and negative ions. The display device kills microorganisms or decomposes and removes harmful organic substances (e.g., sources of odor or environmental hormones), which exist either on the screen or in the air surrounding the display device, by utilizing the action of the positive and negative ions.

Abstract: An uneven pattern detector has a structure wherein (a) detecting elements, each being provided with a TFT which is a switching element and a detecting electrode, are arranged in a matrix manner, and (b) a CSA connected to each data line detects charged or discharged electric charges at the respective detecting elements on respective rows sequentially selected by a gate line, whereby a capacitance (a coupled capacitance of Cf and Cx) reflecting fingerprint unevenness on a finger as a detection object can be detected. In the uneven pattern detector, each of the detecting elements is provided with an auxiliary capacitor electrode located so as to face the detecting electrode. This forms an auxiliary capacitor Cs between the auxiliary capacitor electrode and the detecting electrode.

Abstract: A wiring substrate is arranged so that a first periphery electric wiring and a second periphery electric wiring are patterned on an active matrix substrate, and a TCP as a electronic component is provided on a portion of the patterned electric wiring. The first periphery electric wiring and the second periphery electric wiring are formed by including a metal thin film and a transferred metal film. Further, in the portion where the TCP is provided, the first periphery electric wiring and the second periphery electric wiring either have a monolayer structure with one of the metal thin film and the transferred metal film, or have a lamination structure with both of the metal thin film and the transferred metal film. On this account, connection failure can be prevented on a low resistance wiring substrate.

Abstract: The image reading device of the present invention includes (i) a sensor substrate which functions as a photoelectric transfer element having a photodetecting TFT and a pixel capacitor and (ii) a driving IC for applying a voltage to a gate electrode of the photodetecting TFT so as to drive the photodetecting TFT into an ON state or an OFF state. The driving IC applies a voltage, whose polarity is opposite to average polarity of a voltage making the photodetecting TFT in the OFF state, to the gate electrode of the photodetecting TFT in an arbitrary period. Thus, it is possible to provide the image reading device which can suppress variation of a photodetecting TFT property (resistance value) which is observed in a short time.

Abstract: A conductive layer and a connection electrode of the image sensor are directly in contact with each other and are electrically connected to each other, so that a conventional conductive connector is unnecessary. The cost is reduced by omitting the conductive connector, and the cost is further reduced by reducing the processes. Since the conductive connector is unnecessary, accuracy is not required upon manufacturing, so that an image sensor of lower cost is provided. An opening portion is provided to form a new pixel capacitor between the conductive layer and a polar plate of the pixel capacitor section, so that the pixel capacitance is increased without largely changing the conventional processes.

Abstract: A detector panel having a bias application electrode and a converter layer formed on a supporting substrate, and a readout panel (active matrix panel), are bonded to each other directly through a single layer of electroconductive resin. That is, a pattern of photosensitive resin is formed before-hand on reading electrodes of the readout panel, and this readout panel and the converter layer are bonded together directly. Since the converter layer has no pixel electrodes formed thereon, the converter layer need not be smoothed, and the two panels need not be positionally adjusted to each other with high precision.

Abstract: A gate insulation film (14) and a semiconductor layer (15) are laminated on a gate electrode (13); and a source electrode (17) and a drain electrode (18) are formed on the semiconductor layer (15) by having a predetermined interval between their end portions. Each of the source electrode (17) and the drain electrode (18) includes a superimposition area (17a and 18a), and at least one portion of the superimposition area (17a and 18a) has translucency. This arrangement realizes improvement of photosensitivity (Ip/Id) without causing complication of wiring layout or manufacturing process.

Abstract: An image reading apparatus (10) includes a photoelectric conversion element formation substrate (4) having a plurality of photoelectric conversion elements (2) on a reverse surface of an information reading surface, and a supporting substrate (1) bonded by an adhesive resin (5) to the photoelectric conversion element formation substrate (4) so that the supporting substrate (1) is integrated with the photoelectric conversion element formation substrate (4) and faces the plurality of photoelectric conversion elements (2) on the photoelectric conversion element formation substrate (4). With this arrangement, provided is a photoelectric conversion apparatus and manufacturing method of same in which (a) a process of bonding a micro glass sheet is not required and (b) a protrusion of an installation portion toward a surface of a document is eliminated.

Abstract: A photographing assisting apparatus of the invention is used when a subject is photographed using a photographing apparatus. The photographing assisting apparatus has a planar light source that, while in a state covering a to-be-photographed area on the subject, shines light on the to-be-photographed area on the subject and that is translucent in the direction pointing from the to-be-photographed area on the subject to the photographing apparatus and a support portion that supports the photographing apparatus such that the distance between the subject and the photographing apparatus is kept fixed. The photographing assisting apparatus permits the subject to be illuminated with more evenly distributed brightness and permits a given illumination condition of the subject to be obtained stably.

Abstract: In the present method for fabricating metal interconnections, a Ni film is deposited on an insulating substrate by electroless plating, and a photoresist film is formed in a specified pattern on the Ni film. An Au film is deposited by electroless plating in a region where the Ni film is exposed and where the resist is not formed. The photoresist film is removed, and the Ni film exposed by the removal of the photoresist film is removed by etching. A Cu film is formed on the Au film by electroplating or electroless plating selectively. This method consists of only wet deposition process, involves less etching process and provides metal interconnections of low resistance.

Abstract: An object such as an automobile part, an image forming apparatus part, a bicycle part, other machine parts, a sport article or its part, a toy or its part, or a rain article or its part has a portion to be in contact with a contact object. The contact portion is made of at least one kind of material selected from a group including polymer material such as resin or rubber as well as glass, and the contact portion has a surface entirely or partially coated with a carbon film (typically, a DLC film) having a wear resistance as well as at least one of a lubricity, a water repellency and a gas barrier property. The carbon film is formed on the object with a good adhesion.

Abstract: An electromagnetic detector includes an insulating substrate, whereon a charge storage capacitor, a charge collection electrode connected to the charge storage capacitor, and a semiconductor film having electromagnetic conductivity are laminated in this order. The charge collection electrode has an uneven section composed of at least a concave or convex part, dedicated for use in reinforcing a bonding strength between the semiconductor film and the charge collection electrode. With this structure, a peeling of the semiconductor film can be prevented.

Abstract: On a transparent electrically insulating substrate, formed are a scanning line, and a gate electrode of a switching element, further formed are a gate insulating film, a semiconductor layer, an n+-Si layer to be formed into a source electrode and a drain electrode. After the patterning of the foregoing structure, the dielectric film is formed, ahn the portion corresponding to the contact hole is removed by etching, and photosensitive resin is applied to form the interlayer insulating film. Then, the transparent electrode is extended from the pixel electrode over the switching element, whereon a conversion layer and a gold layer for use in electrode are vapor-deposited. In this structure, an increase in capacitor between the pixel electrode and the signal line can be suppressed by the interlayer insulating film, and the transparent electrode functions as a top gate and release excessive electric charge.

Abstract: An active matrix substrate includes: electrode wires constituted by gate electrodes 2 and source electrodes 6 that are arranged in a lattice; an insulating protection film provided at least on the electrode wires so as to have openings 11a in predetermined areas on the source electrodes 6; and a metal layer stacked on the source electrodes 6 in the openings 11a. Since there is a metal layer stacked on the source electrodes 6, the source electrodes 6 can be readily increased in thickness and hence sufficiently reduced in resistance, by means of the metal layer. Thus, the electrode wires become thicker and more conducting. This way, it becomes possible to provide active matrix substrates and their methods of manufacturing that are suitably applicable to, for example, display devices and image-capturing devices.

Abstract: On a transparent electrically insulating substrate, formed are a scanning line, and a gate electrode of a switching element, further formed are a gate insulating film, a semiconductor layer, an n+-Si layer to be formed into a source electrode and a drain electrode. After the patterning of the foregoing structure, the dielectric film is formed, and the portion corresponding to the contact hole is removed by etching, and photosensitive resin is applied to form the interlayer insulating film. Then, the transparent electrode is extended from the pixel electrode over the switching element, whereon a conversion layer and a gold layer for use in electrode are vapor-deposited. In this structure, an increase in capacitor between the pixel electrode and the signal line can be suppressed by the interlayer insulating film, and the transparent electrode functions as a top gate and release excessive electric charge.

Abstract: An electromagnetic detector includes an insulating substrate, whereon a charge storage capacitor, a charge collection electrode connected to the charge storage capacitor, and a semiconductor film having electromagnetic conductivity are laminated in this order. The charge collection electrode has an uneven section composed of at least a concave or convex part, dedicated for use in reinforcing a bonding strength between the semiconductor film and the charge collection electrode. With this structure, a peeling of the semiconductor film can be prevented.

Abstract: A multimedia information provision system, including a first server, a second server and a user terminal connected to one another via an information communication network, for providing, to the user terminal, multimedia information associated with page information input to the user terminal. The user terminal includes a reading section for reading page information from a page. The first server includes a first database storing page information addresses associated with page information, and a retrieval section for retrieving, from the first database, a page information address associated with the page information that has been read by the reading section and transmitted from the user terminal.

Abstract: What are formed on an insulating substrate are gate electrodes and data electrodes provided in a grid pattern, a TFT provided in each grid and connected to the gate electrode and the data electrode, an interlayer insulating film formed on the TFT and including a contact hole penetrating the film itself, and a sense electrode provided on the interlayer insulating film and passing through the contact hole. On the interlayer insulating film, an upper layer insulating film is formed so as to cover the sense electrode. A surface of the interlayer insulating film in which surface the sense electrode is formed is flat. On this account, it is possible to provide an uneven pattern sensing device capable of smoothing out a surface thereof without any increase of the manufacturing process and limitation of a choice of materials for a protective film.

Abstract: A self-luminous image display apparatus A includes an output section 10 for displaying an image, a reflection section 20 provided on a rear side of the output section 10 with a reflective surface thereof facing the output section, and a light-emitting section 30 provided on a rear side of the output section 10. The output section 10 includes a linear polarization device 15 provided so as to cover a display surface for transmitting only predetermined linearly-polarized light of ambient light, and a retardation film 14 provided closer to the light-emitting section than the linear polarization device 15 for turning linearly-polarized light coming from a direction normal to the display surface and transmitted through the linear polarization device 15 into circularly-polarized light.

Abstract: A composite active-matrix substrate includes: a plurality of active-matrix substrates which are disposed adjacent to one another; a base substrate which is disposed to oppose a bottom surface of the active-matrix substrates; a sealant which is disposed in the form of a frame between the active-matrix substrate and the base substrate; a first filler which fills a spacing surrounded by the active-matrix substrate, the base substrate, and the sealant; and a second filler which fills a gap between edges of the active-matrix substrates. The sealant prevents the first filler from seeping out. In this way, seeping of an adhesive filler can be prevented in the arrangement where a plurality of active-matrix substrates are fixed on the base substrate using the adhesive filler. An electromagnetic wave capturing device according to the present invention uses such a composite active-matrix substrate.