Abstract: A self-luminous image display apparatus of the present invention includes an output section for displaying an image, a reflection section provided on a rear side of the output section with a reflective surface thereof facing the output section, and a light-emitting section provided on a rear side of the output section. The output section includes a linear polarization device provided so as to cover a display surface for transmitting only predetermined linearly-polarized light of ambient light, and a retardation film provided closer to the light-emitting section than the linear polarization device for turning the linearly-polarized light transmitted through the linear polarization device into circularly-polarized light. The linear polarization device has a degree of polarization greater than 70.0%.

Abstract: There is provided a method for fabricating electrical wirings capable of being manufactured with low cost and easily applied to large-scale substrates. A photosensitive ground resin film is formed on an insulating substrate by coating process. The ground resin film is subjected to exposure and development processes, by which a ground resin film patterned into a wiring pattern is obtained. Then, on the patterned ground resin film, a low-resistance metal film made of Cu is formed by electroless plating.

Abstract: In a two-dimensional image detecting device, an active-matrix substrate and an opposing substrate are bonded to each other via conductive connecting members and space keeping members, that are disposed respectively for pixels, such that pixel electrodes and electrical charge collecting electrodes oppose each other. The pixel electrodes are formed on the active-matrix substrate, and the electrical charge collecting electrodes are formed on the opposing substrate. Further, when a resin material of the space keeping members is soft, reinforcing members, which have electrical insulation and are hardly deformed in a thermocompression bonding, are dispersed into the resin material, so that the space keeping ability is fully exhibited. According to this arrangement, it is possible to improve the responsivity so as to respond to a moving image. Additionally, an even space can be achieved between the substrates, and it is possible to prevent a connecting defect and a defect caused by a leak between the substrates.

Abstract: A SnO2 film having a prescribed pattern feature is formed on a substrate by a wet film-formation technology (e.g., sol-gel method). A Ni film is formed on the SnO2 film by an electroless plating method. The electroless plating method is conducted in the presence of at least one sulfur-containing compound selected from the group consisting of thiosulfates, thiocyanates and sulfur-containing organic compounds.

Abstract: Pixel electrode fabricating processes are remarkably reduced. A pixel electrode 22 is formed without using any vacuum film forming apparatus by employing a sol-gel material and coating an insulating substrate with the sol-gel material by a spin-coating method or a dipping method, and this allows the fabricating processes to be reduced. During this course, by forming the pixel electrode before the formation of a scanning electrode 23, signal wiring lines and a TFT 24, the electrode wiring and the TFT 24 suffer no thermal damage even if they have a heat resistance temperature of about 350° C. Furthermore, by using a sol-gel material having photosensitivity, patterning processes are reduced by the elimination of the photoresist patterning process and the etching process. An investment for the equipment of a fabricating apparatus can thus be reduced to allow the cost reduction of the active matrix substrate itself to be achieved.

Abstract: A signal line and a pixel capacitor wire that doubles as a pixel capacitor electrode are fabricated parallel to each other from the same electrode layer through patterning thereof. Therefore, no additional steps are required to form the pixel capacitor wire. In such an arrangement, the pixel capacitor wire and the signal line are disposed parallel to each other; therefore, delays of signal transmission in the signal line and crosstalk between pixels are prevented from occurring. The active matrix substrate incorporating this arrangement is suitably used in liquid crystal display devices, image sensors, and the like. Similar advantages are available with an arrangement in which the signal line and the pixel capacitor wire are disposed parallel to each other, and the storage capacitor electrode, which will constitute a storage capacitor with the pixel electrode therebetween, and the scanning line are fabricated from the same electrode layer through patterning thereof.

Abstract: A signal line and a pixel capacitor wire that doubles as a pixel capacitor electrode are fabricated parallel to each other from the same electrode layer through patterning thereof. Therefore, no additional steps are required to form the pixel capacitor wire. In such an arrangement, the pixel capacitor wire and the signal line are disposed parallel to each other; therefore, delays of signal transmission in the signal line and crosstalk between pixels are prevented from occurring. The active matrix substrate incorporating this arrangement is suitably used in liquid crystal display devices, image sensors, and the like. Similar advantages are available with an arrangement in which the signal line and the pixel capacitor wire are disposed parallel to each other, and the storage capacitor electrode, which will constitute a storage capacitor with the pixel electrode therebetween, and the scanning line are fabricated from the same electrode layer through patterning thereof.

Abstract: Pixel electrodes on an active-matrix substrate do not overlap signal lines and scanning lines, and satisfy a relation X1>Y1, where X1 is the gap between the pixel electrodes and the signal lines, and Y1 is the gap between the pixel electrodes and the scanning lines. As a result, a large-area and high-resolution electromagnetic wave detector is realized with an improved S/N ratio, even with an active-matrix array providing a large area for the charge collecting electrodes.

Abstract: An active-matrix substrate is provided with electrode wires disposed in a lattice form, a plurality of switching elements disposed respectively at intersections of the electrode wires, and connecting terminals for connecting the electrode wires to the outside, the electrode wires include metal electrodes, and at least parts of the connecting terminals have a property of transmitting light. A two-dimensional image detector includes the active-matrix substrate and the amorphous semiconductor layer, which is formed on the active-matrix substrate and has electromagnetic wave conductivity. The connecting terminals are connected with the outside via an anisotropic conductive adhesive having photo-reactivity. A display device includes the active-matrix substrate and an opposing substrate which is disposed so as to oppose the active-matrix substrate via an electro-optical medium, and the connecting terminals are connected to the outside via an anisotropic conductive adhesive having photo-reactivity.

Abstract: There is provided an active matrix substrate which enables to shorten a fabrication process of a pixel electrode, improve exposure precision by self alignment, and prevent leakage failures between pixel electrodes. The active matrix substrate has TFTs disposed in the shape of a matrix. On a light permeable substrate, there are formed gate signal lines and capacity lines. On a gate insulating film on the lines, there are formed in sequence a semiconductor layer, a source electrode and a drain electrode separated right and left by a channel protection layer. Thus, the TFTs are fabricated. Then, the entire substrate is covered with an interlayer insulating film. On top of the interlayer insulating film, there are formed pixel electrodes, which are connected to the TFTs through contact holes piercing through the interlayer insulating film.

Abstract: There is provided is a metal line structure in which no defect of blistering occurs on a surface of a Cu/Ni film or a Cu/Au/Ni film even if an Ni plating thickness is reduced. According to this metal line 1, in a Cu/Au/Ni film structure in which an Au film 13 and a Cu film 15 are successively laminated by electroless plating on an Ni film 12 formed by electroless plating, the Ni film 12 has a phosphorus content x of 10 wt %≦x≦15 wt %. It was discovered through experiments that the so-called high phosphorus content type Ni film 12 having a phosphorus content x of 10 to 15 percent by weight became a fine smooth film under a condition of a film thickness of 0.1 &mgr;m or greater.

Abstract: A composite active-matrix substrate includes: a plurality of active-matrix substrates which are disposed adjacent to one another; a base substrate which is disposed to oppose a bottom surface of the active-matrix substrates; a sealant which is disposed in the form of a frame between the active-matrix substrate and the base substrate; a first filler which fills a spacing surrounded by the active-matrix substrate, the base substrate, and the sealant; and a second filler which fills a gap between edges of the active-matrix substrates. The sealant prevents the first filler from seeping out. In this way, seeping of an adhesive filler can be prevented in the arrangement where a plurality of active-matrix substrates are fixed on the base substrate using the adhesive filler. An electromagnetic wave capturing device according to the present invention uses such a composite active-matrix substrate.

Abstract: The circuit structure of the present invention has a plurality of conductive path layers and at least one interlayer isolating layer formed between the plurality of conductive path layers. Each of the plurality of conductive path layers has at least one conductive path capable of transmitting light or electricity therethrough. Each of a plurality of input/output (I/O) sections is connected to any one of the plurality of conductive paths. Each of the plurality of conductive path layers has a first laminated structure that includes a plurality of first conductive layers and at least one first isolating layer formed therebetween. The interlayer isolating layer has a second laminated structure that includes a plurality of second isolating layers and at least one second conductive layer formed therebetween.

Abstract: An oxide film is formed on an insulating substrate by means of a wet type film forming technique such as a sol-gel method, a chemical deposition method or a liquid phase deposition method. Next, the oxide film is patterned according to the shape of interconnections. Then, a metal film made of Ni is formed on an oxide film pattern by such a wet type film forming technique as a wet type plating method. Further, a metal film made of Au that has a low resistance is laminated on the metal film made of Ni by electroless plating, and a metal film made of Cu that has a low resistance and is low cost is laminated on the Au film by electroplating. Thus, by the above method for manufacturing electric interconnections, a large-area interconnection substrate for a display device and an image detector is able to be fabricated at low cost without using a vacuum film forming apparatus.

Abstract: In an image reading device of the present invention, the polarity of a driving voltage for a Cs electrode is reversed every reading cycle (frame). For example, the Cs electrode is driven by positively charging the capacitor in odd-numbered cycles (frames) and by negatively charging the capacitor in even-numbered cycles (frames). As a result, an image reading device is provided that does not readily change electrical characteristics of the capacitor or TFT, and therefore are reliable over extended periods of use.

Abstract: An image input/output device 100 includes an image information detection section 130 for detecting image information of an image information object 200 by receiving reflected light L from the image information object 200, and a self-luminous image display section 120 for displaying an image based on the image information detected by the image information detection section 130. The image information detection section 130 and the self-luminous image display section 120 are attached together in a back-to-back arrangement. The self-luminous image display section 120 functions as an image-information-detecting light source for irradiating the image information object 200 with light L through the image information detection section 130.

Abstract: An oxide film is formed on an insulating substrate by means of a wet type film forming technique such as a sol-gel method, a chemical deposition method or a liquid phase deposition method. Next, the oxide film is patterned according to the shape of interconnections. Then, a metal film made of Ni is formed on an oxide film pattern by such a wet type film forming technique as a wet type plating method. Further, a metal film made of Au that has a low resistance is laminated on the metal film made of Ni by electroless plating, and a metal film made of Cu that has a low resistance and is low cost is laminated on the Au film by electroplating. Thus, by the above method for manufacturing electric interconnections, a large-area interconnection substrate for a display device and an image detector is able to be fabricated at low cost without using a vacuum film forming apparatus.

Abstract: An electromagnetic wave detecting device which includes a semiconductor film that generates a charge upon induction by an electromagnetic wave, and an active matrix array for reading out the charge generated in the semiconductor film, detects the electromagnetic wave by a direct converting system. The electromagnetic wave detecting device has a characteristic that the active matrix array is formed by having a resin substrate as its base. Since resin has a less weight and a superior impact resistance than glass, it makes an active matrix substrate difficult to break, while improving portability and mobility.

Abstract: The present two-dimensional image sensor is constituted by: a photoconductive film for converting electromagnetic radiation carrying image information to electric charge; an active matrix substrate including: a pixel accommodating layer for accommodating pixel electrodes connected to the photoconductive film to accumulate the electric charge in the photoconductive film; a wiring layer, located opposite the pixel electrodes across the pixel accommodating layer, for providing gate lines, source lines, etc. to detect the accumulated electric charge; and first and second insulating protection layers interposed between the pixel accommodating layer and the wiring layer; and a common electrode, located opposite the pixel accommodating layer across the photoconductive film, for developing an electric field between itself and the pixel electrodes, wherein: the common electrode is provided in a pixel region in which the pixel electrodes are disposed.

Abstract: In an active matrix substrate, a glass substrate is provided with TFTs having gate electrodes connected to scanning lines also provided on the glass substrate. The glass substrate is further provided with auxiliary capacitance lines, formed on the same layer as the scanning lines. Further, pixel electrodes connected to drain electrodes of the TFTs are formed on the same layer as signal lines connected to source electrodes of the TFTs. An insulating layer is provided between the layer forming the signal lines and pixel electrodes and the layer forming the drain and source electrodes. Since the insulating film is present between the signal lines and the scanning and auxiliary capacitance lines, influence on the auxiliary capacitance value can be reduced, as can a signal line capacitance value. As a result, even when the auxiliary capacitance value is increased, the signal line capacitance value remains small.