Patents by Inventor Yoshihiro Koshido
Yoshihiro Koshido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6826815Abstract: A surface acoustic wave device includes a piezoelectric plate and at least one interdigital electrode provided on the piezoelectric plate. The interdigital electrode includes a first metallic thin film and a second metallic thin film laminated on the first metallic thin film and containing tantalum as a principal component, and at least a portion of the tantalum of the second metallic thin film is &agr;-tantalum.Type: GrantFiled: January 16, 2002Date of Patent: December 7, 2004Assignee: Murata Manufacturing Co., Ltd.Inventors: Masatoshi Nakagawa, Makoto Tose, Yoshihiro Koshido, Michio Kadota, Toshimaro Yoneda, Takeshi Nakao
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Publication number: 20040232802Abstract: A surface acoustic wave device includes a SAW having an IDT disposed on a piezoelectric substrate, a conductive pad connected to the IDT, and a bonding substrate, wherein the SAW is bonded to the bonding substrate such that a protective space of the IDT is provided. The bonding substrate includes a through-hole in which an external terminal connection member connected to the conductive pad and an external terminal are disposed. The SAW is bonded to the bonding substrate by an adhesive layer including a solder layer.Type: ApplicationFiled: January 26, 2004Publication date: November 25, 2004Inventor: Yoshihiro Koshido
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Patent number: 6821712Abstract: Methods of forming a resist pattern, of forming an electrode pattern, and of manufacturing a surface acoustic wave device are provided. The resist-pattern- and the electrode-pattern-forming methods each comprise a step of forming an antireflection film for preventing ultraviolet light from diffusely reflecting to a transparent substrate. The antireflection film is formed with a semiconductor having a band gap energy of 3.4 eV or less. The reflectance is expressed by (n1−n2)2/(n1+n2)2 is 0.15 or less, wherein n1 and n2 is the refractive indexes of the substrate and the antireflection film, respectively. The resist-pattern- and the electrode-pattern-forming methods with simple processes can achieve high-quality, reliable resist patterns and electrode patterns.Type: GrantFiled: January 7, 2002Date of Patent: November 23, 2004Assignee: Murata Manufacturing Co., Ltd.Inventors: Kenji Sakaguchi, Toshiyuki Fuyutsume, Yoshihiro Koshido
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Patent number: 6808641Abstract: A method of wiring formation includes forming a feeder film partially on a substrate, forming on the substrate a plating base film via a physical film making method so that the plate base film partially overlaps the feeder film, forming a plated wiring on the plating base film using an electrolytic plating, and selectively removing at least an area of the feeder film which is exposed from the plated wiring, using a wet etching process.Type: GrantFiled: January 17, 2001Date of Patent: October 26, 2004Assignee: Murata Manufacturing Co., LtdInventors: Yoshiyuki Tonami, Yoshihiro Koshido
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Publication number: 20040207033Abstract: A surface acoustic wave device includes a SAW element having an IDT provided on a piezoelectric substrate and electroconductive pads connected to the IDT, and a bonding substrate having electroconductive pad through holes bonded by an adhesive layer so as to face the IDT. A protective space is provided by an excitation portion protecting hollow structure for protecting a surface acoustic wave excitation portion. External terminals connected to the electroconductive pads via the electroconductive pad through holes are at disposed at positions offset from the electroconductive pad through holes.Type: ApplicationFiled: January 29, 2004Publication date: October 21, 2004Inventor: Yoshihiro Koshido
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Publication number: 20040174090Abstract: The present invention provides a compact piezoelectric component in which degradation in the characteristic thereof is further suppressed, and a method for manufacturing the same. A SAW device 21 includes a SAW element 16 having an IDT 2 and a conductive pad 3 connected to the IDT 2 formed on a piezoelectric substrate 1; and an external terminal 12. The SAW device 21 also includes an insulating layer 7 having an exciting portion protective opening 9 serving as space for protecting a SAW-exciting portion including the IDT 2 and a conductive opening 8.Type: ApplicationFiled: January 21, 2004Publication date: September 9, 2004Inventor: Yoshihiro Koshido
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Patent number: 6762533Abstract: A surface acoustic wave device which utilizes excitation of a shear horizontal wave includes a piezoelectric substrate and an interdigital transducer provided on the piezoelectric substrate. The interdigital transducer includes at least three metal layers containing at least one first layer made of a metal with a density of approximately 15 g/cm3 or more as a major component and at least one second layer made of a metal with a density of about 12 g/cm3 or less. The volume of the first layer being in the range from about 20% to about 95% of the total volume of the interdigital transducer or the reflector.Type: GrantFiled: May 3, 2001Date of Patent: July 13, 2004Assignee: Murata Manufacturing Co., Ltd.Inventors: Takashi Iwamoto, Yoshihiro Koshido
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Patent number: 6725513Abstract: A method for manufacturing a surface acoustic wave apparatus decreases a specific resistance of an electrode film by removing hydrogen occluded in the electrode film that is primarily composed of tantalum, so that the device properties are stabilized. An electrode film primarily composed of tantalum is formed on a piezoelectric substrate. Subsequently, this electrode film is heat-treated in a vacuum at a temperature of about 200° C. to about 700° C. for several hours. Thereafter, the electrode film is patterned so as to produce an interdigital electrode transducer.Type: GrantFiled: June 6, 2001Date of Patent: April 27, 2004Assignee: Murata Manufacturing Co., Ltd.Inventors: Masatoshi Nakagawa, Makoto Tose, Yoshihiro Koshido, Koji Fujimoto, Takeshi Nakao
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Patent number: 6686675Abstract: A method for manufacturing an electronic device includes the steps of: forming a base film comprising a material capable of reactive-ion etching with a fluorine-based gas on a substrate; forming a thin film comprising a material capable of reactive-ion etching with a chlorine-based gas on the base film; etching the thin film by a reactive ion etching with a gas containing the chlorine-based gas; and etching the base film exposed by the etched thin film by a reactive ion etching with a gas containing the fluorine-based gas.Type: GrantFiled: February 8, 2001Date of Patent: February 3, 2004Assignee: Murata Manufacturing Co., Ltd.Inventor: Yoshihiro Koshido
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Patent number: 6581258Abstract: A method of forming an electrode film using a vacuum deposition apparatus, includes the steps of depositing a refractory metal on a substrate after reaching a back pressure in a deposition chamber at a pressure that is within a range of about 1×10−4 Pa to about 5′10−3 Pa, and annealing the substrate on which the metal is deposited to decrease the electrical resistivity of the electrode film.Type: GrantFiled: May 8, 2001Date of Patent: June 24, 2003Assignee: Murata Manufacturing Co., Ltd.Inventors: Masayuki Yoneda, Yoshihiro Koshido, Makoto Tose, Masatoshi Nakagawa
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Publication number: 20020164545Abstract: Methods of forming a resist pattern, of forming an electrode pattern, and of manufacturing a surface acoustic wave device are provided. The resist-pattern- and the electrode-pattern-forming methods each comprise a step of forming an antireflection film for preventing ultraviolet light from diffusely reflecting to a transparent substrate. The antireflection film is formed with a semiconductor having a band gap energy of 3.4 eV or less. The reflectance is expressed by (n1−n2)2/(n1+n2)2 is 0.15 or less, wherein n1 and n2 is the refractive indexes of the substrate and the antireflection film, respectively. The resist-pattern- and the electrode-pattern-forming methods with simple processes can achieve high-quality, reliable resist patterns and electrode patterns.Type: ApplicationFiled: January 7, 2002Publication date: November 7, 2002Applicant: Murata Manufacturing Co., Ltd.Inventors: Kenji Sakaguchi, Toshiyuki Fuyutsume, Yoshihiro Koshido
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Publication number: 20020157224Abstract: A method for manufacturing a surface acoustic wave apparatus decreases a specific resistance of an electrode film by removing hydrogen occluded in the electrode film that is primarily composed of tantalum, so that the device properties are stabilized. An electrode film primarily composed of tantalum is formed on a piezoelectric substrate. Subsequently, this electrode film is heat-treated in a vacuum at a temperature of about 200° C. to about 700° C. for several hours. Thereafter, the electrode film is patterned so as to produce an interdigital electrode transducer.Type: ApplicationFiled: June 6, 2001Publication date: October 31, 2002Applicant: Murata Manufacturing Co., Ltd.Inventors: Masatoshi Nakagawa, Makoto Tose, Yoshihiro Koshido, Koji Fujimoto, Takeshi Nakao
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Publication number: 20020084718Abstract: A surface acoustic wave device includes a piezoelectric plate and at least one interdigital electrode provided on the piezoelectric plate. The interdigital electrode includes a first metallic thin film and a second metallic thin film laminated on the first metallic thin film and containing tantalum as a principal component, and at least a portion of the tantalum of the second metallic thin film is &agr;-tantalum.Type: ApplicationFiled: January 16, 2002Publication date: July 4, 2002Applicant: Murata Manufacturing Co., Ltd.Inventors: Masatoshi Nakagawa, Makoto Tose, Yoshihiro Koshido, Michio Kadota, Toshimaro Yoneda, Takeshi Nakao
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Publication number: 20020076660Abstract: A method of forming a wiring pattern which includes the steps of: forming a resist pattern having a shrinkage-inhibiting effect on a substrate; releasing gas from the resist pattern by baking the resist pattern; film-forming an electrode material on the substrate and the resist pattern while the temperature of the substrate is kept lower than the baking temperature of the resist pattern; and removing the electrode material on the resist pattern by separating the resist pattern from the substrate.Type: ApplicationFiled: November 17, 1999Publication date: June 20, 2002Inventors: YUJI TOYOTA, YOSHIHIRO KOSHIDO, KEI FUJIBAYASHI, RYOICHIRO TAKAHASHI, TADAYUKI OKAWA
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Patent number: 6369491Abstract: A surface acoustic wave device includes a piezoelectric plate and at least one interdigital electrode provided on the piezoelectric plate. The interdigital electrode includes a first metallic thin film and a second metallic thin film laminated on the first metallic thin film and containing tantalum as a principal component, and at least a portion of the tantalum of the second metallic thin film is &agr;-tantalum.Type: GrantFiled: August 31, 2000Date of Patent: April 9, 2002Assignee: Murata Manufacturing Co., Ltd.Inventors: Masatoshi Nakagawa, Makoto Tose, Yoshihiro Koshido, Michio Kadota, Toshimaro Yoneda, Takeshi Nakao
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Patent number: 6358429Abstract: A method for manufacturing an electronic device includes the steps of: forming a base film comprising a material capable of reactive-ion etching with a fluorine-based gas on a substrate; forming a thin film comprising a material capable of reactive-ion etching with a chlorine-based gas on the base film; etching the thin film by a reactive ion etching with a gas containing the chlorine-based gas; and etching the base film exposed by the etched thin film by a reactive ion etching with a gas containing the fluorine-based gas.Type: GrantFiled: July 16, 1999Date of Patent: March 19, 2002Assignee: Murata Manufacturing Co., Ltd.Inventor: Yoshihiro Koshido
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Publication number: 20020011760Abstract: A method for manufacturing an electronic device includes the steps of: forming a base film comprising a material capable of reactive-ion etching with a fluorine-based gas on a substrate; forming a thin film comprising a material capable of reactive-ion etching with a chlorine-based gas on the base film; etching the thin film by a reactive ion etching with a gas containing the chlorine-based gas; and etching the base film exposed by the etched thin film by a reactive ion etching with a gas containing the fluorine-based gas.Type: ApplicationFiled: February 8, 2001Publication date: January 31, 2002Inventor: Yoshihiro Koshido
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Patent number: 6340635Abstract: A process for the formation of a wiring pattern, which includes the steps of: exposing a resist through a photomask, the photomask having a pattern whose line width is equal to or less than a resolution limit; and developing the exposed resist to form a resist pattern having groove depressions on the surface thereof, the depressions not reaching the back of the resist pattern. The resist may be a positive resist in which case the resist pattern is formed on an underplate feed film; a plating metal is precipitated on the feed film in a region not covered by the resist pattern; the resist pattern is stripped after the precipitation; and the feed film is selectively removed in a region not covered by the plating metal. Alternatively, the resist may be a negative resist in which case the resist pattern is formed on a substrate; a metallic material is deposited on the resist pattern and the substrate; and the resist is stripped from the substrate to remove the overlying metallic material.Type: GrantFiled: November 4, 1999Date of Patent: January 22, 2002Assignee: Murata Manufacturing Co., Ltd.Inventors: Yuji Toyota, Yoshihiro Koshido, Masayuki Hasegawa
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Publication number: 20010052736Abstract: A surface acoustic wave device which utilizes excitation of a shear horizontal wave includes a piezoelectric substrate and an interdigital transducer provided on the piezoelectric substrate. The interdigital transducer includes at least three metal layers containing at least one first layer made of a metal with a density of approximately 15 g/cm3 or more as a major component and at least one second layer made of a metal with a density of about 12 g/cm3 or less. The volume of the first layer being in the range from about 20% to about 95% of the total volume of the interdigital transducer or the reflector.Type: ApplicationFiled: May 3, 2001Publication date: December 20, 2001Applicant: Murata Manufacturing Co., Ltd.Inventors: Takashi Iwamoto, Yoshihiro Koshido
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Publication number: 20010042290Abstract: A method of forming an electrode film using a vacuum deposition apparatus, includes the steps of depositing a refractory metal on a substrate after reaching a back pressure in a deposition chamber at a pressure that is within a range of about 1×10−4 Pa to about 5′10−3 Pa, and annealing the substrate on which the metal is deposited to decrease the electrical resistivity of the electrode film.Type: ApplicationFiled: May 8, 2001Publication date: November 22, 2001Applicant: Murata Manufacturing Co., Ltd.Inventors: Masayuki Yoneda, Yoshihiro Koshido, Makoto Tose, Masatoshi Nakagawa