Abstract: An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate that includes a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type different from the first conductivity type; and a first transistor that includes, as a source or a drain, a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region that is an impurity region of the second conductivity type, the charge accumulation region being configured to accumulate the signal charge; and a blocking structure that is located between the charge accumulation region and the first transistor, and the blocking structure includes a second impurity region of the second conductivity type.

Abstract: A problem to be solved by the present invention is to provide an aqueous pigment dispersion for adjustment of ink for ink jet recording in which the optical density OD of plain paper and the gloss value of photographic paper are compatible with each other at a high level. Another object of the present invention is to provide an ink for ink jet recording obtained by using the aqueous pigment dispersion. The present invention relates to an aqueous pigment dispersion including an aqueous medium, a dispersion (A), and a dispersion (B), wherein the dispersion (A) contains a pigment (a) and a pigment dispersant resin, and has a volume average particle diameter of 40 nm or more and less than 70 nm, and wherein the dispersion (B) contains a self-dispersing pigment (b), and has a volume average particle diameter of 70 nm or more and 210 nm or less.

Abstract: An imaging device includes: a semiconductor substrate; pixels arranged thereon; and a signal line through which a signal from a pixel is transferred. the pixel includes a photoelectric converter generating a charge, a region accumulating the charge, an amplification transistor having a gate electrically connected to the region, a first capacitor having a first terminal electrically connected to the region and a second terminal, a second capacitor having a third terminal electrically connected to the second terminal and a fourth terminal supplied with a voltage, a feedback transistor a source or a drain of which is electrically connected to the second terminal, and a feedback circuit forming a path through which an output from the amplification transistor is negatively fed back to the region. A part, which is from the feedback transistor to the first capacitor, of the path is closer to the semiconductor substrate than the signal line is.

Abstract: An abnormal noise detection method of a steering system is configured to detect an abnormal noise from the steering system. The steering system includes a column shaft configured to rotatably support a steering wheel and is configured to steer a wheel in response to rotations of the column shaft. The method includes measuring a sound from an end portion of the column shaft on a steering wheel-side by using a microphone arranged to face the end portion of the column shaft, and generating an abnormal noise detection signal due to the steering system from a sound signal to be output from the microphone.

Abstract: An information terminal is configured to extract a predetermined frequency band from a waveform of a signal of a machine component detected by a vibration sensor, to compare an analyzed frequency component and a damaging frequency resulting from a damage of the machine component, and to diagnose abnormality of the machine component. The information terminal includes a database in which the damaging frequency resulting from the damage of the machine component is preserved as a converted damaging frequency obtained by converting the damaging frequency on a basis of a predetermined rotating speed of the machine component. The damaging frequency is provided by calculating the converted damaging frequency in the database by using an actual rotating speed of the machine component. Accordingly, it is possible to keep specifications of a machine component confidential without preserving the specifications of the machine component.

Abstract: An imaging device according to one aspect of the present disclosure includes: a semiconductor substrate; and pixels. Each of the pixels includes: a photoelectric converter that converts incident light into electric charge; a diffusion region provided in the semiconductor substrate and electrically connected to the photoelectric converter; a first transistor including a gate, and the diffusion region as one of a source and a drain; and a plug that is directly connected to the diffusion region, is electrically connected to the photoelectric converter, and includes a semiconductor. The height of the plug and the height of the gate from the surface of the semiconductor substrate are equal to each other.

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

Abstract: An imaging device according to the present disclosure includes: a photoelectric converter that generates signal charge; a semiconductor substrate including a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type; and a first transistor including a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region of the second conductivity type, for accumulating the signal charge; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of the first conductivity type, a third impurity region of the second conductivity type, and a fourth impurity region of the first conductivity type, which are arranged in that order in a direction from the first impurity region toward the charge accumulation region, at the surface of the first semiconductor layer.

Abstract: An imaging device includes: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, a photoelectric converter configured to convert light into charges, and a first transistor including a source and a drain, the first diffusion region functioning as one of the source and the drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges.

Abstract: An imaging device includes: a semiconductor layer including a first region of a first conductivity, a second region of a second conductivity opposite to the first conductivity, and a third region of the second conductivity; a photoelectric converter electrically connected to the first region and converting light into charge; a first transistor including a first source, a first drain, and a first gate above the second region, the first region corresponding to the first source or drain; and a second transistor including a second source, a second drain, and a second gate of the second conductivity above the third region, the first region corresponding to the second source or drain, and the second gate being electrically connected to the first region. The concentration of an impurity of the second conductivity in the third region is higher than that of an impurity of the second conductivity in the second region.

Abstract: A hydraulic circuit includes a first shift valve and a second shift valve that are provided in series between a source oil path through which oil whose pressure has been regulated flows and a first clutch oil path and a second clutch oil path. The first shift valve is selectively switchable between a first switching state where a first communicating oil path and the first clutch oil path are communicated and a second switching state where a second communicating oil path and the second clutch oil path are communicated, and the second shift valve is selectively switchable between a third switching state where the source oil path and the first communicating oil path are communicated and a fourth switching state where the source oil path and the second communicating oil path are communicated.

Abstract: An imaging device including a semiconductor substrate having a surface, the semiconductor substrate including a first region of a first conductivity type and a pixel. The pixel includes a photoelectric converter; a first transistor including a second region of a second conductivity type different from the first conductivity type as a source or a drain and a first electrode as a gate, the second region being located in the semiconductor substrate and being adjacent to the first region, the first electrode being located above the surface; a contact plug coupled to the second region; and a second electrode located above the surface; wherein when seen in a direction perpendicular to the surface, a contact point between the contact plug and the second region is located between the first electrode and the second electrode.

Abstract: A resistive memory device includes a first electrode, a second electrode spaced from the first electrode along a spacing direction, and a hafnium oxide resistive material portion of a resistive memory cell located between the first electrode and the second electrode and having a compositional modulation in oxygen concentration within directions that are perpendicular to the spacing direction.

Abstract: An imaging device according to the present disclosure includes: a photoelectric converter that generates signal charge; a semiconductor substrate including a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type; and a first transistor including a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region of the second conductivity type, for accumulating the signal charge; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of the first conductivity type, a third impurity region of the second conductivity type, and a fourth impurity region of the first conductivity type, which are arranged in that order in a direction from the first impurity region toward the charge accumulation region, at the surface of the first semiconductor layer.

Abstract: An imaging device according to the present disclosure includes: a photoelectric converter generating signal charge; a semiconductor substrate including a first semiconductor layer on a surface; a charge accumulation region of a first conductivity type in the first semiconductor layer; a first transistor including, as a source or a drain, a first impurity region of the first conductivity type in the first semiconductor layer; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the first semiconductor layer, between the charge accumulation region and the first impurity region, and a first electrode above the first semiconductor layer, overlapping at least part of the second impurity region in plan view, the first electrode being configured to be applied with a constant voltage in a period when the charge accumulation region accumulates the signal charge.

Abstract: An image capture device includes pixels and a signal line that is arranged across two or more of the pixels. Each pixel includes: a semiconductor substrate, a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a first transistor including first and second impurity regions in the substrate; a wiring layer between the substrate and the second electrode; and a capacitor arranged between the wiring layer and the substrate in a normal direction of the substrate and including a third electrode, a fourth electrode between the third electrode and the substrate, and a dielectric layer. The first impurity region is electrically connected to the second electrode, the fourth electrode is electrically connected to one of the first and second impurity regions, and at least either the third or fourth electrodes covers the first impurity region when viewed along the normal direction.

Abstract: A masking method for honeycomb formed body, including bonding a film on at least one bottom face of a honeycomb formed body in a quadrangular prism shape such that an adhesive surface is in contact with the bottom face. The step of bonding the film includes bonding of the film so as to have a bottom face covering portion that covers a whole surface of the bottom face and a pair of outer edge portions along one pair of opposite sides of a quadrangle defining an outer peripheral shape of the bottom face and a pair of protruding portions protruding from another pair of opposite sides of the quadrangle. At least a part of the adhesive surface of each of the pair of protruding portions is bonded so as to be in contact with a pair of opposing lateral faces of the honeycomb formed body.

Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.

Abstract: A bottom face processing method of a pillar-shaped honeycomb structure including steps of: preparing a pillar-shaped honeycomb structure including a plurality of first cells which extend in parallel with each other from a first bottom face to a second bottom face, and each of which is opened in the first bottom face and has a protruding plugged portion in the second bottom face, and a plurality of second cells each of which is adjacent to at least one of the first cells with a partition wall interposed therebetween, which extend in parallel with each other from the first bottom face to the second bottom face, and each of which has a protruding plugged portion in the first bottom face, and is opened in the second bottom face; and removing the protruding portion from the plugged portion of each of the first cells and the second cells of the pillar-shaped honeycomb structure.

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.