Abstract: An imaging device including a semiconductor substrate having a surface, the semiconductor substrate including a first region of a first conductivity type and a pixel. The pixel includes a photoelectric converter; a first transistor including a second region of a second conductivity type different from the first conductivity type as a source or a drain and a first electrode as a gate, the second region being located in the semiconductor substrate and being adjacent to the first region, the first electrode being located above the surface; a contact plug coupled to the second region; and a second electrode located above the surface; wherein when seen in a direction perpendicular to the surface, a contact point between the contact plug and the second region is located between the first electrode and the second electrode.

Abstract: An imaging device includes: a semiconductor substrate; pixels arranged thereon; and a signal line through which a signal from a pixel is transferred. the pixel includes a photoelectric converter generating a charge, a region accumulating the charge, an amplification transistor having a gate electrically connected to the region, a first capacitor having a first terminal electrically connected to the region and a second terminal, a second capacitor having a third terminal electrically connected to the second terminal and a fourth terminal supplied with a voltage, a feedback transistor a source or a drain of which is electrically connected to the second terminal, and a feedback circuit forming a path through which an output from the amplification transistor is negatively fed back to the region. A part, which is from the feedback transistor to the first capacitor, of the path is closer to the semiconductor substrate than the signal line is.

Abstract: A method for manufacturing an aqueous black pigment dispersion, including the steps of subjecting a mixture containing carbon black and an aqueous medium to media-less dispersion and adding a resin having anionic groups and a basic compound after the dispersion, wherein the carbon black has a carboxylic acid group on the surface such that the value produced by dividing the amount of carboxylic acid group present on the surface by BET value is 0.8 to 5.5 (?mol/m2) and the resin having anionic groups is an urethane resin that satisfies (weight average molecular weight/acid value)<1,400 or a styrene acrylic resin that satisfies (weight average molecular weight/acid value)<120.

Abstract: A resistive memory device includes an alternating stack of insulating layers and electrically conductive layers. Sidewalls of the electrically conductive layers are laterally recessed relative to sidewalls of the insulating layers to define laterally recessed regions. Discrete clam-shaped barrier material portions are located within the laterally recessed regions. Middle electrodes include a protrusion portion embedded within a respective one of the discrete clam shaped barrier material portions and a vertically-extending portion located outside the laterally recessed regions and having a greater vertical extent than the embedded portion. A resistive memory material layer contacts the vertically-extending portion of each of the middle electrodes. A vertical conductive line contacts the resistive memory material layer.

Abstract: A breaking strength tester includes: a tubular pressure container having opened both ends to house a part of a pillar-shaped honeycomb structure including a partition walls and a circumferential wall; a tubular pressurization elastic body disposed to surround an entire circumference of a pressurized portion having a length equal to or less than ½ of a length in an axial direction of the circumferential wall; a partial pressurization unit which elastically deforms the pressurization elastic body and applies uniform pressure to the entire circumference of the circumferential wall of the pressurized portion of the honeycomb structure housed in the pressure container up to pressure test strength; and a pressure measurement unit which measures a value of the uniform pressure applied to the circumferential wall by the pressurization elastic body.

Abstract: A circumferential coating material contains colloidal silica, silicon carbide, and titanium oxide different in particle diameters from silicon carbide, coats a circumferential surface of a honeycomb structure monolithically formed by extrusion, including as a main component, cordierite having a porosity of 50 to 75%, and forms a circumferential coating layer. A circumferentially coated honeycomb structure has a honeycomb structure comprising latticed porous partition walls defining and forming a plurality of polygonal cells forming through channels and extending from one end face to the other end face, and a circumferential coating layer formed by coating at least a part of a circumferential surface of the honeycomb structure with the circumferential coating material.

Abstract: An imaging device including a unit pixel cell including a semiconductor substrate having a surface including a first area and a second area surrounded by the first area. The semiconductor substrate including a first region of a first conductivity type exposed to the surface in the first area, and a second region of a second conductivity type directly adjacent to the first region and exposed to the surface in the second area; a photoelectric converter; an amplifier; a contact plug connected to the second region; a first transistor including a first electrode; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When viewed in a direction perpendicular to the surface of the semiconductor substrate, a contact between the second region and the contact plug is located between the first electrode and the second electrode.

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

Abstract: A circumferential coating material which is coated on a circumferential surface of a honeycomb structure monolithically formed by extrusion, to form a circumferential coating layer, the circumferential coating material containing fused silica in a range of 20 to 75 mass %, containing a color developing agent in a range of 5 to 50 mass %, containing colloidal silica in a range of 5 to 30 mass %, and further containing a silicon based water repellent agent in a range of 1 to 10 mass % to a total mass of the fused silica, the color developing agent, and the colloidal silica.

Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.

Abstract: An abnormal noise detection method of a steering system is configured to detect an abnormal noise from the steering system. The steering system includes a column shaft configured to rotatably support a steering wheel and is configured to steer a wheel in response to rotations of the column shaft. The method includes measuring a sound from an end portion of the column shaft on a steering wheel-side by using a microphone arranged to face the end portion of the column shaft, and generating an abnormal noise detection signal due to the steering system from a sound signal to be output from the microphone.

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

Abstract: An imaging device including a unit pixel cell including a semiconductor substrate having a surface including a first area and a second area surrounded by the first area. The semiconductor substrate including a first region of a first conductivity type exposed to the surface in the first area, and a second region of a second conductivity type directly adjacent to the first region and exposed to the surface in the second area; a photoelectric converter; an amplifier; a contact plug connected to the second region; a first transistor including a first electrode; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When viewed in a direction perpendicular to the surface of the semiconductor substrate, a contact between the second region and the contact plug is located between the first electrode and the second electrode.

Abstract: Provided is an adhesive which, in a metal foil-containing laminated composite film used in a high temperature sterilization treatment, is resistant to the effects of moisture in the air during curing, has good workability when used as a solvent-free adhesive, and exhibits excellent adhesive strength and acid resistance. Provided is a method for producing an adhesive composition, the method including: a step of obtaining an alcohol-added isocyanate (E) by reacting a trifunctional or higher isocyanate compound (C2) and a monofunctional alcohol (D) at an equivalence ratio of isocyanate groups in the trifunctional or higher isocyanate compound (C2):monofunctional alcohol (D)=100 mol %:25 to 65 mol %, and a step of mixing a polyisocyanate (A) containing a trifunctional or higher isocyanate compound (C1) and the alcohol-added isocyanate (E), and an alcohol (B) having an acid value of 0.

Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.

Abstract: An imaging device includes: a unit pixel cell comprising: a photoelectric converter generating an electric signal and comprising a first and second electrodes and a photoelectric conversion film located therebetween, the first electrode being located on a light receiving side of the photoelectric conversion film, a signal detection circuit detecting the electric signal and comprising a first transistor and a second transistor that are connected to the second electrode, the first transistor amplifying the electric signal, and a capacitor circuit comprising a first capacitor and a second capacitor having a capacitance value larger than that of the first capacitor that are serially connected to each other, the capacitor circuit being provided between the second electrode and a reference voltage; and a feedback circuit comprising the first transistor and an inverting amplifier and negatively feeding back the electric signal to the second transistor via the first transistor and the inverting amplifier.

Abstract: In a compound type conductive wire structure 1, a plurality of wire-stranded portions 3 are provided to constitute main wire-twisted portions 5 embedded in an insulator matrix 2. Each of the wire-stranded portions 3 has a subsidiary wire-stranded portion 4 to serve as a diameter-reduced wire-twisted portion 8. Such is the structure that it enables to provide a flexibility, pliability and high strength with a diameter-increased wire-twisted portion 10, while securing a friction-resistant, vibration-resistant, impact-resistant and yet excellent bending capability. It is possible to prevent the main wire-twisted portions 5 from coming loose when removing a plastic layer coated over the main wire-twisted portion 5. The core wire 9 has a curved surface 9a which partly engages in surface-to-surface contact with the diameter-reduced wire-twisted portion 8. This makes it possible to evenly disperse stresses applied to the curved surface 9a of the core wire 9.

Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.