Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A method for manufacturing a semiconductor device is provided, including: preparing a first chip forming portion having a first semiconductor substrate, first metal pads provided at the substrate and a first circuit electrically connected to at least a part of the pads, and a second chip forming portion having a second semiconductor substrate, second metal pads provided at substrate and a second circuit electrically connected to at least a part of the pads; bonding the first and the second chip forming portions while joining the first and the second pads to form a bonding substrate having a non-bonded region between the first and the second chip forming portions at an outer peripheral portion thereof; and filling an insulating film into the non-bonded region, at least a part of the insulating film containing at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

Abstract: A semiconductor device according to an embodiment includes: a bonding substrate which includes a first chip forming portion having first metal pads provided at a semiconductor substrate and a first circuit connected to the first metal pads, and a second chip forming portion having second metal pads joined to the first metal pads and a second circuit connected to the second metal pads and being bonded to the first chip forming portion; and an insulating film which is filled into a non-bonded region between the first chip forming portion and the second chip forming portion at an outer peripheral portion of the bonding substrate. At least a part of the insulating film contains at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

Abstract: A semiconductor device according to an embodiment includes: a bonding substrate which includes a first chip forming portion having first metal pads provided at a semiconductor substrate and a first circuit connected to the first metal pads, and a second chip forming portion having second metal pads joined to the first metal pads and a second circuit connected to the second metal pads and being bonded to the first chip forming portion; and an insulating film which is filled into a non-bonded region between the first chip forming portion and the second chip forming portion at an outer peripheral portion of the bonding substrate. At least a part of the insulating film contains at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A semiconductor device according to an embodiment includes: a bonding substrate which includes a first chip forming portion having first metal pads provided at a semiconductor substrate and a first circuit connected to the first metal pads, and a second chip forming portion having second metal pads joined to the first metal pads and a second circuit connected to the second metal pads and being bonded to the first chip forming portion; and an insulating film which is filled into a non-bonded region between the first chip forming portion and the second chip forming portion at an outer peripheral portion of the bonding substrate. At least a part of the insulating film contains at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: An etching method according to an embodiment, includes performing etching on a material having tungsten (W) as a main component by using as an etchant a chemical solution having hydrogen peroxide as a main component. The chemical solution contains 12 ppm or more and 100,000 ppm or less of W.

Abstract: According to certain embodiments, a silicide layer is formed after the fabrication of a functional gate electrode using a gate-last scheme. An initial semiconductor structure has at least one impurity regions formed on a semiconductor substrate, a sacrifice film formed over the impurity region, an isolation layer formed over the sacrifice film and a dielectric layer formed over the isolation film. A via is patterned into the dielectric layer of the initial semiconductor structure and through the thickness of the isolation layer such that a contact opening is formed in the isolation layer. The sacrifice film underlying the isolation layer is then removed leaving a void space underlying the isolation layer. Then, a metal silicide precursor is placed within the void space, and the metal silicide precursor is converted to a silicide layer through an annealing process.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: According to certain embodiments, a silicide layer is formed after the fabrication of a functional gate electrode using a gate-last scheme. An initial semiconductor structure has at least one impurity regions formed on a semiconductor substrate, a sacrifice film formed over the impurity region, an isolation layer formed over the sacrifice film and a dielectric layer formed over the isolation film. A via is patterned into the dielectric layer of the initial semiconductor structure and through the thickness of the isolation layer such that a contact opening is formed in the isolation layer. The sacrifice film underlying the isolation layer is then removed leaving a void space underlying the isolation layer. Then, a metal silicide precursor is placed within the void space, and the metal silicide precursor is converted to a silicide layer through an annealing process.

Abstract: According to certain embodiments, a silicide layer is formed after the fabrication of a functional gate electrode using a gate-last scheme. An initial semiconductor structure has at least one impurity regions formed on a semiconductor substrate, a sacrifice film formed over the impurity region, an isolation layer formed over the sacrifice film and a dielectric layer formed over the isolation film. A via is patterned into the dielectric layer of the initial semiconductor structure and through the thickness of the isolation layer such that a contact opening is formed in the isolation layer. The sacrifice film underlying the isolation layer is then removed leaving a void space underlying the isolation layer. Then, a metal silicide precursor is placed within the void space, and the metal silicide precursor is converted to a silicide layer through an annealing process.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor memory device. The method includes forming a first stopper film forming a lower gate layer, making a recess in the lower gate layer, filling a sacrificial film into the recess, forming a second stopper film, making an opening in the second stopper film, forming a stacked body. The stacked body includes electrode films and insulating films. The method includes, making a slit in the stacked body, making a hole in the stacked body, removing the sacrificial film via the hole, forming a memory film including a charge storage film. The method includes forming a channel body on a side wall of the memory film. An etching rate of the first stopper film and the second stopper film is lower than an etching rate of the electrode films and the insulating films.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a stacked body on a substrate. The stacked body includes a plurality of first conductive layers including a metallic element as a main component and a plurality of second conductive layers including a metallic element as a main component provided respectively between the first conductive layers. The method includes making a hole to pierce the stacked body. The method includes making a slit to divide the stacked body. The method includes making a gap between the first conductive layers by removing the second conductive layers by etching via the slit or the hole. The method includes forming a memory film including a charge storage film at a side wall of the hole. The method includes forming a channel body on an inner side of the memory film inside the hole.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor memory device. The method includes forming a first stopper film forming a lower gate layer, making a recess in the lower gate layer, filling a sacrificial film into the recess, forming a second stopper film, making an opening in the second stopper film, forming a stacked body. The stacked body includes electrode films and insulating films. The method includes, making a slit in the stacked body, making a hole in the stacked body, removing the sacrificial film via the hole, forming a memory film including a charge storage film. The method includes forming a channel body on a side wall of the memory film. An etching rate of the first stopper film and the second stopper film is lower than an etching rate of the electrode films and the insulating films.

Abstract: An etching method according to an embodiment, includes performing etching on a material having tungsten (W) as a main component by using as an etchant a chemical solution having hydrogen peroxide as a main component. The chemical solution contains 12 ppm or more and 100,000 ppm or less of W.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a stacked body on a substrate. The stacked body includes a plurality of first conductive layers including a metallic element as a main component and a plurality of second conductive layers including a metallic element as a main component provided respectively between the first conductive layers. The method includes making a hole to pierce the stacked body. The method includes making a slit to divide the stacked body. The method includes making a gap between the first conductive layers by removing the second conductive layers by etching via the slit or the hole. The method includes forming a memory film including a charge storage film at a side wall of the hole. The method includes forming a channel body on an inner side of the memory film inside the hole.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can rinse a substrate with water, a plurality of protruding patterns being formed on the substrate. The method can dry the substrate by removing water from a recess between the protruding patterns by irradiating microwaves.