Abstract: A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously covering the plurality of lower electrodes, and an upper electrode formed on the surface of the ferroelectric film, wherein each of the capacitors is formed for each of the plurality of lower electrode.

Abstract: A titanium nitride film is selectively etched relative to a tungsten film by using as an etchant a solution containing hydrochloric acid and a hydrogen peroxide solution, the molar ratio of the hydrogen peroxide in the hydrogen peroxide solution to hydrogen chloride in the hydrochloric acid being 1/100 or less.

Abstract: A method of forming a copper oxide film includes forming a copper oxide film including an ammonia complex by causing a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, which has been adjusted to have pH of 8 to 10 or pH of 9 to 10, to contact a surface of a copper film. A method of fabricating a semiconductor device includes burying a copper film to be a wiring or a contact wiring in a wiring groove or a contact hole formed in a surface of an insulating film formed on a semiconductor substrate, or in both the wiring groove and the contact hole, forming a copper oxide film including an ammonia complex on a surface of the copper film by using the copper oxide film forming method, and removing the copper oxide film from the copper film using acid or alkali.

Abstract: A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously covering the plurality of lower electrodes, and an upper electrode formed on the surface of the ferroelectric film, wherein each of the capacitors is formed for each of the plurality of lower electrode.

Abstract: A method of forming a copper oxide film comprises the step of forming a copper oxide film including an ammonia complex by causing a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, which has been adjusted to have pH of 8 to 10 or pH of 9 to 10, to contact a surface of a copper film. A method of etching a copper film comprises the steps of forming a copper oxide film including an ammonia complex on a surface of the copper film by using the copper oxide film forming method as recited in any one of claims 1 to 3, and removing the copper oxide film from the copper film using acid or alkali.

Abstract: A method of forming a copper oxide film on a copper surface, particularly applicable to forming copper wiring interconnects in the semiconductor industry, allows copper surfaces to be etched more evenly than in conventional methods. The step of forming a copper oxide film on a copper surface comprises exposing the copper surface to a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, which has been adjusted to have a pH of 8 to 10. A copper oxide surface can also be exposed to a solution of aqueous ammonia and aqueous hydrogen peroxide, which has been adjusted to have a pH of 10 to 11. When such a copper oxide surface is etched using acid or alkali, the exposed copper surface is smoother than conventional etching, resulting in better copper interconnect structures that can include conductive diffusion barriers.