Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.

Abstract: A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a semiconductor wafer, a trench ferroelectric capacitor formed in the semiconductor wafer in one source/drain of the field effect transistor, wherein one electrode thereof is connected to the source/drain, and a wiring formed in the semiconductor wafer and connected to the other electrode of the trench ferroelectric capacitor.

Abstract: A transistor is formed in a surface region of a semiconductor substrate. A capacitor is formed above the transistor, and has a first electrode, a second electrode, and a dielectric film formed between the first and second electrodes. A first contact is formed on a side surface portion of the capacitor so as to be close to at least a portion of the capacitor, and connected to one of source/drain regions. A side insulating film is formed, in contact with at least the capacitor, on the sidewalls of the first contact.

Abstract: There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

Abstract: A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.

Abstract: There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

Abstract: A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.

Abstract: A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

Abstract: A ferro-electric memory device includes a first ferro-electric capacitor which is selectively formed on a first insulating film and has a first lower electrode, a first ferro-electric film, and a first upper electrode, a first hydrogen barrier film which has first to third portions, the first portion being formed on the first insulating film, the second portion covering the side surfaces of the first lower electrode, first ferro-electric film, and first upper electrode, and the third portion being formed on the upper surface of the first upper electrode, a first interlayer formed on the second portion, and a second hydrogen barrier film which has fourth to sixth portions, the fourth portion having a first contact portion which comes into contact with at least part of the first portion, the fifth portion being formed on the first interlayer, and the sixth portion being formed on the third portion.

Abstract: A ferro-electric memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate, and a first ferro-electric capacitor electrically connected to the first transistor and formed of a first capacitor material layer having a first lower electrode, a first ferro-electric film, and a first upper electrode, the first ferro-electric capacitor being thicker at its central portion than at its ends.

Abstract: A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

Abstract: A ferro-electric memory device includes a first ferro-electric capacitor which is selectively formed on a first insulating film and has a first lower electrode, a first ferro-electric film, and a first upper electrode, a first hydrogen barrier film which has first to third portions, the first portion being formed on the first insulating film, the second portion covering the side surfaces of the first lower electrode, first ferro-electric film, and first upper electrode, and the third portion being formed on the upper surface of the first upper electrode, a first interlayer formed on the second portion, and a second hydrogen barrier film which has fourth to sixth portions, the fourth portion having a first contact portion which comes into contact with at least part of the first portion, the fifth portion being formed on the first interlayer, and the sixth portion being formed on the third portion.

Abstract: A transistor including a source/drain region is formed on a semiconductor substrate. A plug electrode is formed on the source/drain region. A conductive film is formed on the plug electrode. A first insulation film is formed on the conductive film. A lower electrode is formed on the first insulation film, and electrically connected to the conductive film formed on the plug electrode. A ferroelectric film is formed on the lower electrode. An upper electrode is formed on the ferroelectric film.

Abstract: An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

Abstract: A ferro-electric memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate, and a first ferro-electric capacitor electrically connected to the first transistor and formed of a first capacitor material layer having a first lower electrode, a first ferro- electric film, and a first upper electrode, the first ferro-electric capacitor being thicker at its central portion than at its ends.

Abstract: A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.

Abstract: An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

Abstract: The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Additionally, the present invention provides a ferroelectric device having a hardmask relatively thin compared to an underlying barrier layer when compared to prior art devices.

Abstract: A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.