Abstract: A magnetostrictive film includes rich regions having a mesh pattern in a cross section perpendicular to a film thickness direction of the magnetostrictive film. The rich regions are richer in a specific element contributing to ferromagnetism than surroundings of the rich regions.

Abstract: Provided is a permanent magnet including a rare-earth element R (such as Nd), a transition metal element T (such as Fe), B, Zr, and Cu. The permanent magnet contains a plurality of main phase grains including Nd, T, and B, and grain boundary multiple junctions, the one grain boundary multiple junction is a grain boundary surrounded by three or more of the main phase grains, one of the grain boundary multiple junctions contains a ZrB2 crystal and an R—Cu-rich phase including R and Cu, Fe is contained in the ZrB2 crystal, a total concentration of Nd and Pr in the one grain boundary multiple junction containing both the ZrB2 crystal and the R—Cu-rich phase is higher than a total concentration of Nd and Pr in the main phase grain, a concentration of Cu in the one grain boundary multiple junction containing both the ZrB2 crystal and the R—Cu-rich phase is higher than a concentration of Cu in the main phase grain, and a unit of the concentration of each of Nd, Pr, and Cu is atomic %.

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: Provided is a permanent magnet including a rare-earth element R (such as Nd), a transition metal element T (such as Fe), B, Zr, and Cu. The permanent magnet contains a plurality of main phase grains including Nd, T, and B, and grain boundary multiple junctions, the one grain boundary multiple junction is a grain boundary surrounded by three or more of the main phase grains, one of the grain boundary multiple junctions contains a ZrB2 crystal and an R—Cu-rich phase including R and Cu, Fe is contained in the ZrB2 crystal, a total concentration of Nd and Pr in the one grain boundary multiple junction containing both the ZrB2 crystal and the R—Cu-rich phase is higher than a total concentration of Nd and Pr in the main phase grain, a concentration of Cu in the one grain boundary multiple junction containing both the ZrB2 crystal and the R—Cu-rich phase is higher than a concentration of Cu in the main phase grain, and a unit of the concentration of each of Nd, Pr, and Cu is atomic %.

Abstract: A module includes a multilayer body that includes insulating-resin base members laminated together, first and second main surfaces, and first and second regions when viewed in plan view. A first conductor pattern and a protective film that covers the first conductor pattern are provided in the first region of the first main surface. Second conductor patterns and holes that extend to the second conductor patterns are provided in the second region of the multilayer body. The holes are provided with conductive joining materials, and connectors are connected to the second conductor patterns by the conductive joining materials.

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

Abstract: A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: A fabric includes a fabric body and a backing resin layer laminated on a rear surface of the fabric body. The fabric body includes a fluorine-containing organic compound adhered to at least the surface thereof, and the fluorine-containing organic compound has six carbon atoms and at least one fluorine atom. The backing resin layer contains a resin, a flame retardant, and an organic fluorine based oil repellent in which the carbon number is six.

Abstract: A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.

Abstract: A fabric includes a fabric body and a backing resin layer laminated on a rear surface of the fabric body. The fabric body includes a fluorine-containing organic compound adhered to at least the surface thereof, and the fluorine-containing organic compound has six carbon atoms and at least one fluorine atom. The backing resin layer contains a resin, a flame retardant, and an organic fluorine based oil repellent in which the carbon number is six.

Abstract: The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.