Abstract: A module includes a multilayer body that includes insulating-resin base members laminated together, first and second main surfaces, and first and second regions when viewed in plan view. A first conductor pattern and a protective film that covers the first conductor pattern are provided in the first region of the first main surface. Second conductor patterns and holes that extend to the second conductor patterns are provided in the second region of the multilayer body. The holes are provided with conductive joining materials, and connectors are connected to the second conductor patterns by the conductive joining materials.

Abstract: A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: The invention provides a porous stamp material for laser processing that is available for continuous extrusion molding. A material including at least 100 parts by weight of thermoplastic resin, 50-250 parts by weight of hydroxylated compound whose dehydration starting temperature is 100 to 500° C., and water-soluble pore-forming material that has 10-60 ?m average particle diameter is mixed to obtain a mixed material. The obtained mixed material is extruded to obtain an extrusion molded product. The obtained extrusion molded product is processed with an aqueous solvent to elute the water-soluble pore-forming material, thereby yielding a porous stamp material that has continuous pores having 10-60 ?m pore diameter. The obtained porous stamp material is laser-processed to manufacture a stamp.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: A fabric includes a fabric body and a backing resin layer laminated on a rear surface of the fabric body. The fabric body includes a fluorine-containing organic compound adhered to at least the surface thereof, and the fluorine-containing organic compound has six carbon atoms and at least one fluorine atom. The backing resin layer contains a resin, a flame retardant, and an organic fluorine based oil repellent in which the carbon number is six.

Abstract: The invention provides a porous stamp material for laser processing that is available for continuous extrusion molding. A material including at least 100 parts by weight of thermoplastic resin, 50-250 parts by weight of hydroxylated compound whose dehydration starting temperature is 100 to 500° C., and water-soluble pore-forming material that has 10-60 ?m average particle diameter is mixed to obtain a mixed material. The obtained mixed material is extruded to obtain an extrusion molded product. The obtained extrusion molded product is processed with an aqueous solvent to elute the water-soluble pore-forming material, thereby yielding a porous stamp material that has continuous pores having 10-60 ?m pore diameter. The obtained porous stamp material is laser-processed to manufacture a stamp.

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract: The present invention aims to provide a rare earth magnet having sufficiently excellent anticorrosion property. The rare earth magnet 1 according to the present invention to solve the above problems includes a magnet body 10 containing rare earth elements, a substantial amorphous layer 20 formed on a surface of the magnet body 10, and a protecting layer 30 on a surface of the amorphous layer 20, and the amorphous layer 20 contains material identical to main component elements of magnet material contained in the magnet body 10.

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract: An active material with a sufficient cycle characteristic and a process for its production are provided. According to the process for production of an active material of this invention, an aqueous solution containing a metal fluorocomplex is contacted with a metal oxide to form a surface-modified layer on the surface of the metal oxide. The active material of the invention comprises a core section made of a metal oxide and a surface-modified layer covering the core section, wherein the surface-modified layer is an oxide containing a metal present in the core section and a metal not present in the core section.

Abstract: A thin film piezoelectric device according to the present invention includes a potassium sodium niobate-based piezoelectric thin film having an average crystal grain diameter of 60 nm or more and 90 nm or less, and a pair of electrode films configured to hold the piezoelectric thin film therebetween.