Abstract: Disclosed herein is an organic light-emitting diode, comprising an anode, a hole transport layer, a light-emitting layer including a host and a dopant, an electron transport layer, and a cathode in that order, wherein an electron-density-controlling layer including an anthracene derivative represented by the following Chemical Formula A is disposed between the light-emitting layer and the electron transport layer, and wherein an affinity Ah (eV) of the host of the light-emitting layer, an affinity Aed (eV) of the electron-density-controlling layer, and an affinity Ae (eV) of the electron transport layer satisfy an relationship of Ah?Aed?Ae.

Abstract: An embodiment of the present inventive concept provides an ultraviolet light emitting device comprising: a substrate having a concave or convex edge pattern disposed along an edge of an upper surface thereof; a semiconductor laminate disposed on the substrate and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along the side surface of the semiconductor laminate in a stacking direction; and first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively.

Abstract: An electronic apparatus is provided. The electronic apparatus includes a first memory configured to store a first artificial intelligence (AI) model including a plurality of first elements and a processor configured to include a second memory. The second memory is configured to store a second AI model including a plurality of second elements. The processor is configured to acquire output data from input data based on the second AI model. The first AI model is trained through an AI algorithm. Each of the plurality of second elements includes at least one higher bit of a plurality of bits included in a respective one of the plurality of first elements.

Abstract: Provided are a reconfigurable processor and a method of operating the same, the reconfigurable processor including: a configurable memory configured to receive a task execution instruction from a control processor; and a plurality of reconfigurable arrays, each configured to receive configuration information from the configurable memory, wherein each of the plurality of reconfigurable arrays simultaneously executes a task based on the configuration information.

Abstract: A multivision apparatus may include a display panel that includes a display screen including a first region and an adjacent second region. The first region may include first pixels, and the second region may include second pixels. The first pixels and the second pixels have different structures. The display panel may display a single image across the first region and the second region of the display screen. The multivision apparatus may include an array of interconnected display panels configured to collectively display an image, based on each given display panel displaying a separate sub-image in the first and second regions of the given display panel.

Abstract: An ultraviolet light emitting device including a first conductivity-type AlGaN semiconductor layer; an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor; a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region; second conductivity-type nitride patterns disposed on the first region of the second conductivity-type AlGaN semiconductor layer and having an energy band gap that is smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer; a transparent electrode layer covering the second conductivity-type nitride patterns and the second region of the second conductivity-type AlGaN semiconductor layer; a light-transmissive dielectric layer disposed on the transparent electrode layer between the second conductivity-type nitride patterns; and a metal electrode disposed on the transparent electrode layer overlying the second

Abstract: A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

Abstract: An ultraviolet light emitting device including a first conductivity-type AlGaN semiconductor layer; an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor; a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region; second conductivity-type nitride patterns disposed on the first region of the second conductivity-type AlGaN semiconductor layer and having an energy band gap that is smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer; a transparent electrode layer covering the second conductivity-type nitride patterns and the second region of the second conductivity-type AlGaN semiconductor layer; a light-transmissive dielectric layer disposed on the transparent electrode layer between the second conductivity-type nitride patterns; and a metal electrode disposed on the transparent electrode layer overlying the second

Abstract: An embodiment of the present inventive concept provides an ultraviolet light emitting device comprising: a substrate having a concave or convex edge pattern disposed along an edge of an upper surface thereof; a semiconductor laminate disposed on the substrate and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along the side surface of the semiconductor laminate in a stacking direction; and first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively.

Abstract: An ultraviolet semiconductor light emitting device includes a semiconductor stack, a trench, a filling insulator, and first and second electrodes. The semiconductor stack includes first and second conductivity-type semiconductor layers and an active layer therebetween that includes an AlGaN semiconductor material. The trench extends through the second conductivity-type semiconductor layer and the active layer to the first conductivity-type semiconductor layer and has a first width. The filling insulator fills the trench such that the filling insulator extends at least through the active layer in the trench and includes of an insulating material having a particular refractive index. The first electrode is connected to the first conductivity-type semiconductor layer, and the second electrode is connected to the second conductivity-type semiconductor layer.

Abstract: An ultraviolet light emitting device package, comprising: a growth substrate having a first surface, a second surface corresponding thereto, and a light emitting window penetrating through the first surface and the second surface, a reflective layer disposed on an internal wall of the light emitting window, a light transmissive cover disposed on the first surface and covering the light emitting window, a light emitting structure disposed on the second surface to cover the light emitting window and including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and a first electrode and a second electrode, connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively.

Abstract: Provided are a method and apparatus for processing a convolution operation in a neural network. The apparatus may include a memory, and a processor configured to read, from the memory, one of divided blocks of input data stored in a memory; generate an output block by performing the convolution operation on the one of the divided blocks with a kernel; generate a feature map by using the output block, and write the feature map to the memory.

Abstract: A processor for performing deep learning is provided herein. The processor includes a processing element unit including a plurality of processing elements arranged in a matrix form including a first row of processing elements and a second row of processing elements. The processing elements are fed with filter data by a first data input unit which is connected to the first row processing elements. A second data input unit feeds target data to the processing elements. A shifter composed of registers feeds instructions to the processing elements. A controller in the processor controls the processing elements, the first data input unit and second data input unit to process the filter data and target data, thus providing sum of products (convolution) functionality.

Abstract: An electronic apparatus and method thereof are provided for performing deep learning. The electronic apparatus includes a storage configured to store target data and kernel data; and a processor including a plurality of processing elements that are arranged in a matrix shape. The processor is configured to input, to each of the plurality of processing elements, a first non-zero element from among a plurality of first elements included in the target data, and sequentially input, to each of a plurality of first processing elements included in a first row from among the plurality of processing elements, a second non-zero element from among the plurality of elements included in the kernel data. Each of the plurality of first processing elements is configured to perform an operation between the input first non-zero element and the input second non-zero element, based on depth information of the first non-zero element and depth information of the second non-zero element.

Abstract: The present invention relates to a drug delivery system having a double core-shell structure and, specifically, to a double nano-drug delivery system having an inner core-shell containing a poorly soluble camptothecin compound and a water-soluble camptothecin compound inside and an amphiphilic polymer shell, and to a manufacturing method therefor. The double core-shell structured particles manufactured by the present invention form very stable particles and show a mono-distribution of particles before and after freeze-drying. The particles of the present invention show excellent results compared with existing monolayer micelles in animal efficacy tests and pharmacokinetic tests, and do not use a surfactant causing hypersensitivity, and thus the use of the particles of the present invention can provide a pharmaceutical composition or a drug delivery system platform, which are safe for the human body.

Abstract: Disclosed herein are a compound represented by Chemical Formula A or Chemical Formula B and an organic light-emitting diode comprising the same.

Abstract: The present disclosure relates to an organic light-emitting diode: comprising a first electrode; a second electrode facing the first electrode; and a hole transport layer and a light-emitting layer disposed in that order between the first and the second electrode, wherein the light-emitting layer includes a host and a hole assistant material represented by the following Chemical Formula A, the hole assistant material having a highest occupied molecular orbital (HOMO) energy level lower in absolute value than that of the host.

Abstract: The present invention provides a biodegradable medical adhesive or a sealant composition containing an oxidized glycosaminoglycan and a polyamine. The composition of the present invention exhibits improved effects in biodegradation, coating property, gelation time, hemostatic capacity, adhesive force, moisture absorptive capacity and the like, and thus can be applied to various medical uses in which a medical adhesive or sealant can be used, such as biotissue adhesion, filling, coating, adhesion prevention, wound covering, leakage prevention and hemostasis.

Abstract: The present disclosure relates to an organic light-emitting diode which can operate at a low voltage with high efficiency and exhibits the effect of having an alleviated luminance reduction rate in a low dynamic range. More particularly, the organic light-emitting diode comprises: a first electrode; a second electrode facing the first electrode; and a light-emitting layer and a charge balance control layer arranged sequentially between the first and the second electrode, wherein the light-emitting layer includes at least one of amine derivative compounds represented by the following Chemical Formula A and the charge balance control layer includes at least one of anthracene derivative compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A, B, and C are as defined in the specification.