Abstract: An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.

Abstract: Provided is a loop scheduling method including scheduling a first loop using execution units, and scheduling a second loop using execution units available as a result of the scheduling of the first loop. An n-th loop (n>2) may be scheduled using a result of scheduling an (n?1)-th loop, similar to the (n?1)-th loop. The first loop may be a higher priority loop than the second loop.

Abstract: In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

Abstract: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.

Abstract: Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.

Abstract: The present invention relates to an organic light emitting diode and a manufacturing method therefor, and the organic light emitting diode comprises: a lower electrode formed on a light-transmitting substrate; an organic thin film layer which is formed on the lower electrode and includes a light-emitting layer; a light-transmitting upper electrode formed on the organic thin film layer; a functional layer which is formed on the upper electrode and enables mutual reinforcement and interference for the transmitted lights; and a reflective layer formed on the functional layer.

Abstract: An electrolyte for a rechargeable lithium battery includes a lithium salt, an organic solvent and an additive. The organic solvent includes a sulfur-containing compound represented by Chemical Formula 1, and the additive includes a phosphazene compound represented by Chemical Formula 2. A rechargeable lithium battery including the electrolyte may have improved performance and safety. In Chemical Formulae 1 and 2, the substituents are as defined in the detailed description.

Abstract: According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

Abstract: Provided are an apparatus and method for performing a complex number operation using a Single Instruction Multiple Data (SIMD) architecture. A SIMD operation apparatus may perform, in parallel, a real part operation and an imaginary part operation of a plurality of complex numbers. The real part operation and the imaginary part operation may be performed sequentially, or in parallel.

Abstract: According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other.

Abstract: The present invention relates to a silk nanofiber nerve conduit characterized in that fibroin nanofibers having a diameter of 200 to 400 nm, originated from silk fiber, are stacked layer upon layer to form a porous conduit-shape; and a method for producing thereof, more specifically, to a method for producing a silk nanofiber nerve conduit comprising: (Step 1) preparing a fibrous spinning solution; (Step 2) producing a silk nanofiber of conduit-shape by electrospinning the fibrous spinning solution prepared in step 1 into the cylindrical collecting part coated with polyethyleneoxide; and (Step 3) separating a silk nanofiber of conduit-shape produced in step 2 from the collecting part. The silk nanofiber nerve conduit of the present invention has excellent biocompatibility; allows the body fluid to be exchanged inter in and out of conduit through pores of the conduit, as well; has a proper elasticity, tensile strength, and tear strength.

Abstract: Dishwashers and methods of control for operation of dishwashers are disclosed. The dishwasher may include an upper rack in an upper portion of a washing compartment for placing dishes, such as wine glasses, which are susceptible to damage. The dishwasher may also include an upper spraying arm in the upper portion of the washing compartment. During a wash cycle, the upper spraying arm can spray washing water toward the upper rack and steam may be supplied to the washing compartment at various intervals to reduce the risk of damage to the dishes and improve foreign matter removal. During a rinse cycle, water which may be heated in multiple stages by a sump heater may be sprayed toward the upper rack.

Abstract: An apparatus and a method for performing a single instruction multiple data (SIMD) operation using pairing of registers are provided. An example SIMD apparatus includes a first register configured to store first result data generated by dyadic operators, and a second register configured to store second result data generated by the dyadic operators. The first register and the second register may be paired with each other. Examples also include the use of more than two dyadic operators and/or registers, as well as intermediate registers.

Abstract: Provided is a loop scheduling method including scheduling a first loop using execution units, and scheduling a second loop using execution units available as a result of the scheduling of the first loop. An n-th loop (n>2) may be scheduled using a result of scheduling an (n?1)-th loop, similar to the (n?1)-th loop. The first loop may be a higher priority loop than the second loop.

Abstract: A method and corresponding apparatus for processing a shuffle instruction are provided. Shuffle units are configured in a hierarchical structure, and each of the shuffle units generates a shuffled data element array by performing shuffling on an input data element array. In the hierarchical structure, which includes an upper shuffle unit and a lower shuffle unit, the shuffled data element array output from the lower shuffle unit is input to the upper shuffle unit as a portion of the input data element array for the upper shuffle unit.

Abstract: A concrete girder includes a pair of ultra high performance concrete (UHPC) side form members, each having a lower flange and a web perpendicular thereto, extending in the longitudinal direction and being prepared with UHPC by using a precast, the pair of UHPC side form members being disposed in parallel so that lateral side surfaces of the lower flanges are successively positioned; and concrete placed in a space between the pair of UHPC side form members so that the placed concrete is integrated with the pair of UHPC side form members to form both traverse side surfaces thereof and the lower flange forms a lower flange thereof.

Abstract: Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.

Abstract: Provided are an austenitic steel having excellent machinability and ultra-low temperature toughness in a weld heat-affected zone including 15 wt % to 35 wt % of manganese (Mn), carbon (C) satisfying 23.6C+Mn?28 and 33.5C?Mn?23, 5 wt % or less (excluding 0 wt %) of copper (Cu), chromium (Cr) satisfying 28.5C+4.4Cr?57 (excluding 0 wt %), and iron (Fe) as well as other unavoidable impurities as a remainder, wherein a Charpy impact value of a weld heat-affected zone at ?196° C. is 41 J or more, and a method of manufacturing the steel. According to the present invention, a low-cost ultra-low temperature steel may be obtained, a stable austenite phase may be formed at low temperature, carbide formation may be effectively suppressed, and a structural steel having excellent machinability and ultra-low temperature toughness in a weld heat-affected zone may be provided.