Abstract: A latency signal generating method and a corresponding semiconductor memory device, among other things, are disclosed. Such a method includes: receiving a clock signal for the semiconductor memory device; receiving a mode characterization signal; providing the DQS; and adapting the duration of a preamble state of the DQS according to the mode characterization signal to promote conformance of a strobe state of the DQS with the clock signal.

Abstract: Provided is a semiconductor memory device and method that can control internal supply voltages independently. The semiconductor memory device includes a memory cell array, a reference voltage generating unit, an internal reference voltage generating unit, and an internal supply voltage generating unit. The reference voltage generating unit outputs a reference voltage in response to an external voltage. The internal reference voltage generating unit converts the reference voltage into a plurality of internal reference voltages, and outputs the plurality of internal reference voltages. The internal supply voltage generating unit converts the plurality of internal reference voltages into a plurality of internal supply voltages, and outputs the plurality of internal supply voltages. A first internal reference voltage is used to generate a first internal supply voltage and a second internal reference voltage is used to generate a second internal supply voltage.

Abstract: A voltage generation circuit and semiconductor memory device including the same are provided.

Abstract: A semiconductor memory device includes a plurality of banks. A data path may be divided into a read data path and a write data path, therefore, parallel processing of write and read commands are possible. The semiconductor memory device may include an address bank buffer, address buffer, column predecoder and/or a decoder. The semiconductor memory device may begin execution of a write command in a bank in one clock cycle and begin execution of a read command in the following clock cycle, therefore, bus efficiency is increased and/or write-to-read turn around time is reduced.

Abstract: An integrated circuit device disclosed herein includes a test device and a setup and hold measuring circuit. The setup and hold measuring circuit generates a reference signal and a data signal in response to an external clock signal in a test mode of operation. The test device receives the data signal in response to a reference signal, and outputs the inputted data signal as a setup and hold determining circuit. One of the reference signal and the data signal is a multiphase signal synchronized with the external clock signal. The setup and hold measuring circuit detects whether the output of the test device indicates a valid value of the data signal, and generates the detected result to the external as a setup/hold timing margin through at least one pad.

Abstract: A voltage generation circuit and semiconductor memory device including the same are provided.

Abstract: Provided are a reference current generating method and a current reference circuit. The reference current generating method includes generating a first current using a NMOS transistor and a second current using a PMOS transistor, calculating a current difference between the first and second currents, generating a third current which has a similar current/temperature slope as the second current by multiplying the current difference by a proportional constant, and generating a reference current by subtracting the third current from the second current.

Abstract: Provided are a temperature sensor using a ring oscillator and temperature detection method using the same. One embodiment of the temperature sensor includes a first pulse generator, a second pulse generator, and a counter. The first pulse generator includes a first ring oscillator and generates a first clock signal having a variable period according to a change in temperature. The second pulse generator includes a second ring oscillator and generates a second clock signal having a fixed period. The counter counts a pulse width of the first clock signal as a function of a pulse width of the second clock signal and generates a temperature code.

Abstract: A latency signal generating method and a corresponding semiconductor memory device, among other things, are disclosed. Such a method includes: receiving a clock signal for the semiconductor memory device; receiving a mode characterization signal; providing the DQS; and adapting the duration of a preamble state of the DQS according to the mode characterization signal to promote conformance of a strobe state of the DQS with the clock signal.

Abstract: A memory system includes first and second memory devices having commonly connected data terminals and commonly connected memory control signal terminals, e.g., devices in respective first and second independently selectable memory banks that share common data lines and common memory control signal lines, such as column address strobe, row address strobe, write enable, and address signal lines. The first and second memory devices includes respective selective on-die termination (ODT) circuits configured to selectively provide first and second termination impedances at their respective data terminals responsive to a memory control signal at the commonly connected memory control signal terminals. The selective ODT circuits may produce the first termination impedance responsive to a memory write operation, and may produce the second termination impedance responsive to a memory read operation and/or expiration of a predetermined time interval following termination of the memory write operation.

Abstract: A method of finding errors in a content addressable memory (CAM) and a CAM cell array, the CAM being capable of finding errors in the CAM cell array, is disclosed. The CAM includes the CAM cell array having a plurality of CAM cells and a match line state storing unit. The match line state storing unit is connected to a word line and a match line of the plurality of CAM cells and has a plurality of state cells in which a logic level of stored data is changed according to a logic level of the match line. Errors in the CAM cell array are found by reading data stored in the plurality of state cells. The data stored in the plurality of state cells are matched when there are no errors in the CAM cell array.

Abstract: A voltage generation circuit and semiconductor memory device including the same are provided.

Abstract: A semiconductor memory device includes a plurality of memory cell array blocks, a bit line sense amplifier, a local sense amplifier that can be controlled to be turned on or off, a data sense amplifier, and a controller. The controller activates a local sense control signal for a predetermined duration in response to first and second signals. The first signal is a bit line sense enable signal that activates the bit line sense amplifier, and the local sense amplifier is activated for a predetermined duration after the bit line sense enable signal is activated. The second signal is activated or deactivated in phase with a column selection line signal that connects a pair of bit lines and a pair of local input/output lines. Accordingly, it is possible to turn on or off the local sense amplifier according to operating conditions, thereby increasing a tRCD parameter and reducing the consumption of current.

Abstract: A method of finding errors in a content addressable memory (CAM) and a CAM cell array, the CAM being capable of finding errors in the CAM cell array, is disclosed. The CAM includes the CAM cell array having a plurality of CAM cells and a match line state storing unit. The match line state storing unit is connected to a word line and a match line of the plurality of CAM cells and has a plurality of state cells in which a logic level of stored data is changed according to a logic level of the match line. Errors in the CAM cell array are found by reading data stored in the plurality of state cells. The data stored in the plurality of state cells are matched when there are no errors in the CAM cell array.

Abstract: An integrated circuit device disclosed herein includes a test device and a setup and hold measuring circuit. The setup and hold measuring circuit generates a reference signal and a data signal in response to an external clock signal in a test mode of operation. The test device receives the data signal in response to a reference signal, and outputs the inputted data signal as a setup and hold determining circuit. One of the reference signal and the data signal is a multiphase signal synchronized with the external clock signal. The setup and hold measuring circuit detects whether the output of the test device indicates a valid value of the data signal, and generates the detected result to the external as a setup/hold timing margin through at least one pad.

Abstract: A semiconductor memory device includes a plurality of banks. A data path may be divided into a read data path and a write data path, therefore, parallel processing of write and read commands are possible. The semiconductor memory device may include an address bank buffer, address buffer, column predecoder and/or a decoder. The semiconductor memory device may begin execution of a write command in a bank in one clock cycle and begin execution of a read command in the following clock cycle, therefore, bus efficiency is increased and/or write-to-read turn around time is reduced.

Abstract: A memory system includes first and second memory devices having commonly connected data terminals and commonly connected memory control signal terminals, e.g., devices in respective first and second independently selectable memory banks that share common data lines and common memory control signal lines, such as column address strobe, row address strobe, write enable, and address signal lines. The first and second memory devices includes respective selective on-die termination (ODT) circuits configured to selectively provide first and second termination impedances at their respective data terminals responsive to a memory control signal at the commonly connected memory control signal terminals. The selective ODT circuits may produce the first termination impedance responsive to a memory write operation, and may produce the second termination impedance responsive to a memory read operation and/or expiration of a predetermined time interval following termination of the memory write operation.

Abstract: Methods of terminating an external transmission line in a memory device having an on-die termination circuit include electrically coupling the termination circuit to the transmission line in response to a control signal which indicates that the memory device is in an active mode or a write mode. The termination circuit has an impedance value that is mismatched with an impedance value of the transmission line. The termination circuit can include an input/output pad, a resistor, and a transistor connected in series to a reference voltage. Also, the termination circuit may be electrically coupled to the transmission line by activating the transistor in the termination circuit to connect the transmission line to the reference voltage in response to the control signal. Related devices are also disclosed.

Abstract: A semiconductor memory device having a circuit precharging a data line comprises a first precharge circuit, which precharges a first data line pair to a first voltage level in a precharge operation state, and a second precharge circuit, which precharges a second data line pair to a second voltage level in a precharge operation state. The semiconductor memory device comprises a data input driver, which receives data and drives the data to the first data line pair, a switch, which in response to a selection signal, connects or disconnects the first data line pair with the second data line pair, and a charge-sharing control circuit, which in response to the selection signal makes one line of the first data line pair and one line of the second data line pair share charge. The semiconductor memory device reduces current consumption over repeated write/precharge operations.

Abstract: A semiconductor memory device having a circuit precharging a data line comprises a first precharge circuit, which precharges a first data line pair to a first voltage level in a precharge operation state, and a second precharge circuit, which precharges a second data line pair to a second voltage level in a precharge operation state. The semiconductor memory device comprises a data input driver, which receives data and drives the data to the first data line pair, a switch, which in response to a selection signal, connects or disconnects the first data line pair with the second data line pair, and a charge-sharing control circuit, which in response to the selection signal makes one line of the first data line pair and one line of the second data line pair share charge. The semiconductor memory device reduces current consumption over repeated write/precharge operations.