Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes an in-plane anisotropy free layer, a perpendicular magnetic anisotropy (PMA) inducing layer, and a ferromagnetic amorphous layer. A PMA-inducing layer may be disposed such that an in-plane anisotropy free layer is between a barrier layer and the PMA-inducing layer. A ferromagnetic amorphous layer may be disposed between an in-plane anisotropy free layer and a PMA-inducing layer.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes a ferromagnetic amorphous layer and an in-plane anisotropy free layer. A spin Hall effect (SHE) layer may be coupled to the composite free layer of the magnetic tunnel junction. The SHE layer may be configured such that an in-plane electric current within the SHE layer causes a spin current in the composite free layer.

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetization direction, and a tunnel barrier layer located between the free layer and the reference layer, and a nonmagnetic spin Hall effect layer. The spin Hall effect layer may include an alternating stack of beta phase tungsten layers and noble metal nonmagnetic dusting layers. Alternatively or in addition, a hafnium layer may be located between the nonmagnetic spin Hall effect layer and the free layer.

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetization direction, and a tunnel barrier layer located between the free layer and the reference layer, and a nonmagnetic spin Hall effect layer. The spin Hall effect layer may include an alternating stack of beta phase tungsten layers and noble metal nonmagnetic dusting layers. Alternatively or in addition, a hafnium layer may be located between the nonmagnetic spin Hall effect layer and the free layer.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes an in-plane anisotropy free layer, a perpendicular magnetic anisotropy (PMA) inducing layer, and a ferromagnetic amorphous layer. A PMA-inducing layer may be disposed such that an in-plane anisotropy free layer is between a barrier layer and the PMA-inducing layer. A ferromagnetic amorphous layer may be disposed between an in-plane anisotropy free layer and a PMA-inducing layer.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes a ferromagnetic amorphous layer and an in-plane anisotropy free layer. A spin Hall effect (SHE) layer may be coupled to the composite free layer of the magnetic tunnel junction. The SHE layer may be configured such that an in-plane electric current within the SHE layer causes a spin current in the composite free layer.

Abstract: Embodiments of the present disclosure generally relate to memory devices having enhanced perpendicular magnetic anisotropy. The memory device includes a plurality of first leads, a plurality of second leads, and a plurality of memory cells having a plurality of magnetic layers and a tunneling barrier layer. An interfacial layer is incorporated in each memory cell between one of the magnetic layers and the tunneling barrier layer to enhance perpendicular magnetic anisotropy, while preserving high tunneling magnetoresistance.

Abstract: Embodiments disclosed herein generally relate to a magnetic head having an amorphous ferromagnetic reference layer. The ferromagnetic reference layer may have amorphous structure as a result of an amorphous ferromagnetic underlayer that the ferromagnetic reference layer is deposited thereon. The amorphous ferromagnetic reference layer enhances magnetoresistance, leading to an improved magnetic head.

Abstract: Embodiments disclosed herein generally relate to a magnetic head having an amorphous ferromagnetic reference layer. The ferromagnetic reference layer may have amorphous structure as a result of an amorphous ferromagnetic underlayer that the ferromagnetic reference layer is deposited thereon. The amorphous ferromagnetic reference layer enhances magnetoresistance, leading to an improved magnetic head.

Abstract: Embodiments disclosed herein generally relate to a magnetic head having an amorphous ferromagnetic reference layer. The ferromagnetic reference layer may have amorphous structure as a result of an amorphous ferromagnetic underlayer that the ferromagnetic reference layer is deposited thereon. The amorphous ferromagnetic reference layer enhances magnetoresistance, leading to an improved magnetic head.

Abstract: A portable terminal auxiliary device having a portable terminal support function is provided. The portable terminal auxiliary device includes: a body part having a front surface and a rear surface; a front surface connector provided on the front surface of the body part and connected to a connector of a portable terminal side so as to exchange power and signals; a stand provided on the front surface of the body part so as to support a portable terminal together with the body part; and a rear surface connector electrically connected to the front connector and provided on the rear surface of the body part so as to be connected to a front connector of a second auxiliary device. Additional auxiliary device can be further connected to the portable terminal auxiliary device capable of supporting a portable terminal.

Abstract: A disk drive includes a disk including a magnetizable layer of material, and a transducer. The transducer has a read element that includes a first shield layer, a pinned layer, a metallic spacer, an AP (anti-parallel) free layer, and a second shield layer. The pinned layer has a surface area which is greater than the area of the AP free layer. The read element also includes an anti-ferromagnetic layer for substantially fixing the magnetic orientation of a plurality of domains in the pinned layer. The ferromagnetic layer is adjacent the pinned layer. The pinned layer, and the anti-ferromagnetic layer both have surface areas which are greater than the area associated with the AP free layer. The anti-ferromagnetic layer, in one embodiment, has a pinning strength in the range of 0.5 erg/cm2 to 1.5 erg/cm2.

Abstract: In one embodiment, a device includes a reference layer, a free layer positioned above the reference layer, and a spacer layer positioned between the reference layer and the free layer, the spacer layer providing a gap between the reference layer and the free layer, wherein the reference layer extends beyond a rear extent of the free layer in an element height direction perpendicular to a media-facing surface of the device, and wherein a rear portion of the spacer layer that extends beyond the rear extent of the free layer has an increased resistivity in comparison with a resistivity of a rest of the spacer layer. In other embodiments, a method for forming the device is presented, along with other device structures having an extended pinned layer (EPL).

Abstract: A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer includes a crystalline non-Heusler alloy ferromagnetic layer on an antiferromagnetic layer, a Heusler alloy layer, and an intermediate crystalline non-Heusler alloy of the form CoFeX, where X is one or more of Ge, Al, Si and Ga, located between the non-Heusler alloy layer and the Heusler alloy layer. The CoFeX alloy layer has a composition (CoyFe(100-y))zX(100-z) where y is between about 10 and 90 atomic percent, and z is between about 50 and 90 atomic percent. The CoFeX alloy layer induces very strong pinning, which greatly lessens the likelihood of magnetic instability by the spin polarized electron flow from the free layer to the reference layer.

Abstract: Provided is a method of producing an artificial marble containing amethyst and vermiculite. The artificial marble includes amethyst representing superior performance in terms of a far-infrared emission effect and an antimicrobial property with a fine appearance, and vermiculite serving as an inorganic filler material and representing a superior adiabatic effect with a light weight. The artificial marble has a structure in which the first base layer including amethyst and the second base layer including vermiculite are laminated on each other.

Abstract: A disk drive includes a disk including a magnetizable layer of material, and a transducer. The transducer has a read element that includes a first shield layer, a pinned layer, a metallic spacer, an AP (anti-parallel) free layer, and a second shield layer. The pinned layer has a surface area which is greater than the area of the AP free layer. The read element also includes an anti-ferromagnetic layer for substantially fixing the magnetic orientation of a plurality of domains in the pinned layer. The ferromagnetic layer is adjacent the pinned layer. The pinned layer, and the anti-ferromagnetic layer both have surface areas which are greater than the area associated with the AP free layer. The anti-ferromagnetic layer, in one embodiment, has a pinning strength in the range of 0.5 erg/cm2 to 1.5 erg/cm2.