Abstract: A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer includes a crystalline non-Heusler alloy ferromagnetic layer on an antiferromagnetic layer, a Heusler alloy layer, and an intermediate crystalline non-Heusler alloy of the form CoFeX, where X is one or more of Ge, Al, Si and Ga, located between the non-Heusler alloy layer and the Heusler alloy layer. The CoFeX alloy layer has a composition (CoyFe(100-y))zX(100-z) where y is between about 10 and 90 atomic percent, and z is between about 50 and 90 atomic percent. The CoFeX alloy layer induces very strong pinning, which greatly lessens the likelihood of magnetic instability by the spin polarized electron flow from the free layer to the reference layer.

Abstract: A method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor that has a reference layer with low coercivity includes first depositing, within a vacuum chamber, a seed layer and an antiferromagnetic layer on a substrate without the application of heat. The substrate with deposited layers is then heated to between 200-600° C. for between 1 to 120 minutes. The substrate with deposited layers is then cooled, preferably to room temperature (i.e., below 50° C., but to at least below 100° C., in the vacuum chamber. After cooling of the antiferromagnetic layer, the ferromagnetic reference layer is deposited on the antiferromagnetic layer. Then the substrate with deposited layers is removed from the vacuum chamber and subjected to a second annealing, in the presence of a magnetic field, by heating to a temperature between 200-400° C. for between 0.5-50 hours.

Abstract: A method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor that has a reference layer with low coercivity includes first depositing, within a vacuum chamber, a seed layer and an antiferromagnetic layer on a substrate without the application of heat. The substrate with deposited layers is then heated to between 200-600° C. for between 1 to 120 minutes. The substrate with deposited layers is then cooled, preferably to room temperature (i.e., below 50° C., but to at least below 100° C., in the vacuum chamber. After cooling of the antiferromagnetic layer, the ferromagnetic reference layer is deposited on the antiferromagnetic layer. Then the substrate with deposited layers is removed from the vacuum chamber and subjected to a second annealing, in the presence of a magnetic field, by heating to a temperature between 200-400° C. for between 0.5-50 hours.

Abstract: A method for making a current-perpendicular-to the-plane giant magnetoresistance (CPP-GMR) sensor with a Heusler alloy pinned layer on the sensor's Mn-containing antiferromagnetic pinning layer uses two annealing steps. A layer of a crystalline non-Heusler alloy ferromagnetic material, like Co or CoFe, is deposited on the antiferromagnetic pinning layer and a layer of an amorphous X-containing ferromagnetic alloy, like a CoFeBTa layer, is deposited on the Co or CoFe crystalline layer. After a first in-situ annealing of the amorphous X-containing ferromagnetic alloy, the Heusler alloy pinned layer is deposited on the amorphous X-containing ferromagnetic layer and a second high-temperature annealing step is performed to improve the microstructure of the Heusler alloy pinned layer.

Abstract: Provided is a multi-function supporter for a portable terminal which has a novel structure so as to stably support the portable terminal. The multi-function supporter has a concave groove 11 having a shape corresponding to that of a second housing 20 on a lower surface of a first housing 10. Also, when the second housing 20 is laterally rotated and spread, the lower surface of the first housing 10 may be closely attached to a bottom surface to support the supporter without being laterally shaken. Thus, a portable terminal 1 mounted on the supporter may be prevented from laterally falling down or the supporter may be prevented from falling down together with the portable terminal 1, thereby allowing stable mounting of the portable terminal 1.

Abstract: A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).

Abstract: A current-perpendicular-to-the-plane magnetoresistive sensor has magnetic damping material located adjacent either or both of the sensor side edges and back edge to reduce the effect of spin transfer torque. The damping material may be Pt, Pd, Os, or a rare earth metal from the 15 lanthanoid elements. The damping material may be an ultrathin layer in contact with the sensor edges. An insulating layer is deposited on the damping layer and isolates the sensor's ferromagnetic biasing layer from the damping layer. Instead of being a separate layer, the damping material may be formed adjacent the sensor edges by being incorporated into the material of the insulating layer.

Abstract: A method for making a current-perpendicular-to the-plane giant magnetoresistance (CPP-GMR) sensor with a Heusler alloy pinned layer on the sensor's Mn-containing antiferromagnetic pinning layer uses two annealing steps. A layer of a crystalline non-Heusler alloy ferromagnetic material, like Co or CoFe, is deposited on the antiferromagnetic pinning layer and a layer of an amorphous X-containing ferromagnetic alloy, like a CoFeBTa layer, is deposited on the Co or CoFe crystalline layer. After a first in-situ annealing of the amorphous X-containing ferromagnetic alloy, the Heusler alloy pinned layer is deposited on the amorphous X-containing ferromagnetic layer and a second high-temperature annealing step is performed to improve the microstructure of the Heusler alloy pinned layer.

Abstract: A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).

Abstract: Provided is a method of producing an artificial marble containing amethyst and vermiculite. The artificial marble includes amethyst representing superior performance in terms of a far-infrared emission effect and an antimicrobial property with a fine appearance, and vermiculite serving as an inorganic filler material and representing a superior adiabatic effect with a light weight. The artificial marble has a structure in which the first base layer including amethyst and the second base layer including vermiculite are laminated on each other.

Abstract: A method of manufacturing a magnetic tunnel junction device includes a barrier layer forming step of forming a tunnel barrier layer. The barrier layer forming step comprises a step of depositing a first metal layer, an oxygen surfactant layer forming step of forming an oxygen surfactant layer on the first metal layer, a step of deposing a second metal layer above the first oxygen surfactant layer, and an oxidation step of oxidizing the first metal layer and the second metal layer to form a metal oxide layer.

Abstract: A method for making a current-perpendicular-to-the plane magnetoresistive (CPP-MR) sensor with an antiparallel-free APF structure having the first free layer (FL1) formed of an alloy, like a Heusler alloy, that requires high-temperature or extended-time post-deposition annealing includes the step of annealing the Heusler alloy material before deposition of the antiparallel coupling layer (APC) of the APF structure. In a modification to the method, a protection layer, for example, a layer of Ru, Ta, Ti, Al, CoFe, CoFeB or NiFe, may deposited on the layer of Heusler alloy material prior to annealing, and then etched away to expose the underlying Heusler alloy layer as FL1.

Abstract: A method of manufacturing a magnetoresistive element includes a tunnel barrier forming step. The tunnel barrier forming step comprises a metal layer forming step of forming a metal layer to have a first thickness, a plasma processing step of performing a plasma treatment which exposes the metal layer to a plasma of an inert gas to etch the metal layer to have a second thickness smaller than the first thickness, and an oxidation step of oxidizing the metal layer having undergone the plasma treatment to form a metal oxide which forms a tunnel barrier.

Abstract: MgO-based magnetic tunnel junction (MTJ) device includes in essence a ferromagnetic reference layer, a MgO tunnel barrier and a ferromagnetic free layer. The microstructure of MgO tunnel barrier, which is prepared by the metallic Mg deposition followed by the oxidation process or reactive sputtering, is amorphous or microcrystalline with poor (001) out-of-plane texture. In the present invention at least only the ferromagnetic reference layer or both of the ferromagnetic reference and free layer is proposed to be bi-layer structure having a crystalline preferred grain growth promotion (PGGP) seed layer adjacent to the tunnel barrier. This crystalline PGGP seed layer induces the crystallization and the preferred grain growth of the MgO tunnel barrier upon post-deposition annealing.

Abstract: A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer, and changes the phase to a crystal state or amorphous state when supplied with an electric current via the perovskite layer.

Abstract: MgO-based magnetic tunnel junction (MTJ) device includes in essence a ferromagnetic reference layer, a MgO tunnel barrier and a ferromagnetic free layer. The microstructure of MgO tunnel barrier, which is prepared by the metallic Mg deposition followed by the oxidation process or reactive sputtering, is amorphous or microcrystalline with poor (001) out-of-plane texture. In the present invention at least only the ferromagnetic reference layer or both of the ferromagnetic reference and free layer is proposed to be bi-layer structure having a crystalline preferred grain growth promotion (PGGP) seed layer adjacent to the tunnel barrier. This crystalline PGGP seed layer induces the crystallization and the preferred grain growth of the MgO tunnel barrier upon post-deposition annealing.

Abstract: An educational robot apparatus for children, as a type of a user created robot (UCR), includes a robot and a robot control program having a decoder, a controller and a transferor. The decoder scans an input card and has first and second photo-interrupter. The input card includes an information code and a reference code. The information code has a code information written as a barcode shape. The code information corresponds to an imperative sentence included in a robot control program. The reference code is written as a uniform barcode shape and is used in decoding the code information. The first photo-interrupter reads the information code and decodes the code information, and the second photo-interrupter decodes the reference code. The controller codes the robot control program based on the code information decoded by the decoder. The transferor transfers the robot control program to the robot.

Abstract: A method of manufacturing a magnetoresistive element includes a tunnel barrier forming step. The tunnel barrier forming step comprises a metal layer forming step of forming a metal layer to have a first thickness, a plasma processing step of performing a plasma treatment which exposes the metal layer to a plasma of an inert gas to etch the metal layer to have a second thickness smaller than the first thickness, and an oxidation step of oxidizing the metal layer having undergone the plasma treatment to form a metal oxide which forms a tunnel barrier.

Abstract: A method of manufacturing a magnetic tunnel junction device includes a barrier layer forming step of forming a tunnel barrier layer. The barrier layer forming step comprises a step of depositing a first metal layer, an oxygen surfactant layer forming step of forming an oxygen surfactant layer on the first metal layer, a step of deposing a second metal layer above the first oxygen surfactant layer, and an oxidation step of oxidizing the first metal layer and the second metal layer to form a metal oxide layer.

Abstract: A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer, and changes the phase to a crystal state or amorphous state when supplied with an electric current via the perovskite layer.