Abstract: On the substrate (101), there is formed at least a laminated structure composed of sandwiching a tunnel barrier layer (107) between magnetic pinned layers (105 and 106) each having multilayer structure and magnetic free layers (108, 109, and 110) each having multilayer structure. The magnetic pinned layer having multilayer structure, the tunnel barrier layer, and the magnetic free layer having multilayer structure are stacked in this order on the substrate. The magnetic free layer having multilayer structure has a sandwich structure holding an intermediate layer (109) between a first magnetic free layer (108) and a second magnetic free layer (110). The intermediate layer comprises any one of a single-layer metal nitride, a single-layer alloy, and a multilayer film obtained by stacking pluralities of films made of metal, metal nitride, or alloy.

Abstract: The present invention discloses an IPS LCD device including a first and second substrate opposing with each other, a common electrode on an inner surface of the first substrate, a pixel electrode parallel to the common electrode, a first alignment layer covering the common and pixel electrodes, wherein the first alignment layer is rubbed, a second alignment layer on an inner surface of the upper substrate, wherein the second alignment layer is photo-aligned, and a liquid crystal layer between the first and second substrates.

Abstract: In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.

Abstract: The present invention discloses an IPS LCD device including a first and second substrate opposing with each other, a common electrode on an inner surface of the first substrate, a pixel electrode parallel to the common electrode, a first alignment layer covering the common and pixel electrodes, wherein the first alignment layer is rubbed, a second alignment layer on an inner surface of the upper substrate, wherein the second alignment layer is photo-aligned, and a liquid crystal layer between the first and second substrates.

Abstract: A lateral double-diffused MOS (LDMOS) transistor is provided. The LDMOS transistor includes a semiconductor substrate 202 formed of a material having p-conductivity type impurities, a drift region formed of a material having n-conductivity type impurities on the semiconductor substrate, a first buried layer 206 of p-type material and a second buried layer 208 formed of n-type material. Layers 206 and 208 are arranged at the boundary between the semiconductor substrate and the drift region. A first well region 210 of p-type material contacts the first buried layer 206 n-type in a first portion 1 of the drift region.

Abstract: The present invention discloses an IPS LCD device including a first and second substrate opposing with each other, a common electrode on an inner surface of the first substrate, a pixel electrode parallel to the common electrode, a first alignment layer covering the common and pixel electrodes, wherein the first alignment layer is rubbed, a second alignment layer on an inner surface of the upper substrate, wherein the second alignment layer is photo-aligned, and a liquid crystal layer between the first and second substrates.

Abstract: A high voltage lateral Double diffused Metal Oxide Semiconductor (DMOS) transistor includes a plurality of well regions of a first conductivity type formed to be spaced out within a well region of a second conductivity type between a channel region of the first conductivity type and a drain region of the second conductivity type. Most current is carried through some portions of the well region of the second conductivity type in which the well regions of the first conductivity do not appear so that the current carrying performance of the device is improved. When a bias voltage is applied to the drain region, the well region of the second conductivity type is completely depleted at other portions where the well region of the second conductivity type and the well regions of the first conductivity type alternately appear so that the breakdown voltage of the device can be increased.

Abstract: A lateral double-diffused MOS (LDMOS) transistor is provided. The LDMOS transistor includes a semiconductor substrate 202 formed of a material having p-conductivity type impurities, a drift region formed of a material having n-conductivity type impurities on the semiconductor substrate, a first buried layer 206 of p-type material and a second buried layer 208 formed of n-type material. Layers 206 and 208 are arranged at the boundary between the semiconductor substrate and the drift region. A first well region 210 of p-type material contacts the first buried layer 206 n-type in a first portion 1 of the drift region.

Abstract: A high voltage lateral Double diffused Metal Oxide Semiconductor (DMOS) transistor includes a plurality of well regions of a first conductivity type formed to be spaced out within a well region of a second conductivity type between a channel region of the first conductivity type and a drain region of the second conductivity type. Most current is carried through some portions of the well region of the second conductivity type in which the well regions of the first conductivity do not appear so that the current carrying performance of the device is improved. When a bias voltage is applied to the drain region, the well region of the second conductivity type is completely depleted at other portions where the well region of the second conductivity type and the well regions of the first conductivity type alternately appear so that the breakdown voltage of the device can be increased.

Abstract: In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.

Abstract: A power semiconductor device and a method for fabricating the same are provided. The power semiconductor device includes a source structure having a projected portion with a tip-shaped end portion on its center and formed so as to surround a predetermined region of right and left and upper portions of the projected portion. Two drain structures are formed in a predetermined region surrounded by the source structure. Extended drain structures are formed around the drain structures and the extended drain structures function as a channel with a field effect channel between sides of the projected portion of the source structure. Accordingly, since there are no drain structures on the tip of the projected portion of the source structure, although a radius of curvature of the tip of the projected portion is small, a decrease in a breakdown voltage of a device due to the small radius of curvature of the tip of the projected portion can be suppressed.

Abstract: The present invention discloses an IPS LCD device including a first and second substrate opposing with each other, a common electrode on an inner surface of the first substrate, a pixel electrode parallel to the common electrode, a first alignment layer covering the common and pixel electrodes, wherein the first alignment layer is rubbed, a second alignment layer on an inner surface of the upper substrate, wherein the second alignment layer is photo-aligned, and a liquid crystal layer between the first and second substrates.

Abstract: A power semiconductor device and a method for fabricating the same are provided. The power semiconductor device includes a source structure having a projected portion with a tip-shaped end portion on its center and formed so as to surround a predetermined region of right and left and upper portions of the projected portion. Two drain structures are formed in a predetermined region surrounded by the source structure. Extended drain structures are formed around the drain structures and the extended drain structures function as a channel with a field effect channel between sides of the projected portion of the source structure. Accordingly, since there are no drain structures on the tip of the projected portion of the source structure, although a radius of curvature of the tip of the projected portion is small, a decrease in a breakdown voltage of a device due to the small radius of curvature of the tip of the projected portion can be suppressed.

Abstract: Methods of forming field effect transistors include the steps of implanting first conductivity type dopants at a first dose level into a first portion of a relatively lightly doped drift region of first conductivity type semiconductor and then oxidizing the first portion of the semiconductor drift region to form a relatively thick field oxide isolation region and simultaneously form a drain region extension of first conductivity type semiconductor (e.g., N.sup.0) underneath the field oxide isolation region by driving the dopants implanted at the first dose level into the drift region. A body region of second conductivity type semiconductor (e.g., P-type) is then formed in a second portion of the semiconductor drift region. A gate electrode is then formed on the drift region to extend opposite the body region and the field oxide isolation region. Source and drain regions of first conductivity type semiconductor (e.g.

Abstract: A mini disc or a compact disc can be alternatively loaded on a single turntable of a disc player. A compact disc is loaded, a first hub is inserted into a central hole of the compact disc so as for the compact disc to be placed on a first loading face, and then, a clamper head which has a cover, a retainer, and a clamper wheel assembled with each other clamps the compact disc. Meanwhile, when a mini disc is loaded, a mini disc cartridge is loaded directly on a turntable. In this case, the mini disc cartridge is firmly secured on the turntable owing to a magnetic interaction between the metal disc cartridge and a first magnet provided in the turntable.

Abstract: A driving motor fixing part for being installed with an attachable driving motor and a turntable assembly fixing part for being installed with an attachable turntable assembly are coaxially installed. The turntable assembly fixing part has a penetrating tunnel, and air from inside of the tunnel is exhausted by the exhausted so that the turntable assembly can be in tight contact with the turntable assembly fixing part. A pair of legs are extended downwardly from the turntable assembly fixing part, and then the legs are bent and extended to a central axis of the turntable assembly fixing part. Extended ends of the legs have axial side walls with predetermined widths which are closely disposed at the motor shaft to grasp the motor shaft. The ends prevents the motor shaft from being warped by axially biased force in pressing the motor shaft into the turntable assembly.

Abstract: An apparatus for automatically press-fitting a turntable has driving motor attachably/detachably installed to/from a driving motor fixing part. A turntable assembly fixing part is attachably/detachably installed with a turntable assembly and arranged to allow a rotating shaft of the turntable assembly to be exactly coaxial with a motor shaft of the driving motor. An insertion lug is formed at a lower surface of the turntable assembly fixing part to be fitted/separated into/from a groove in an upper corresponding surface of a turntable. A motor shaft fixing part arranged to an upper portion of a drive chassis coupled to the driving motor includes a stand portion formed with an elongated guide hole for receiving/separating the motor shaft and a motor shaft supporting portion which has a sidewall upwardly bent to perpendicularly extend from an edge of the elongated guide hole of the stand portion.

Abstract: A supporting part for supporting a drive chassis has a bottom surface, side walls formed to be bent upwardly from the bottom surface, and combining projectors projected on the top surface of the side walls which are inserted into combining holes of the drive chassis. A guide rod is installed parallel with and on the driving chassis. A master pickup has a detecting lens reflecting an incident light. A transporting part has a first light sensing portion installed at a top thereof and a rack gear portion formed on a bottom surface of the supporting part. The transporting part is movable parallel with the supporting part by the rack gear portion. The master pickup can be moved parallel with a surface of the drive chassis wherein the master pickup is guided by a guide rod is conjunction with the movement of the transporting part.

Abstract: A device for locking a driving motor of a disc player screw-couples a turntable driving motor and a drive chassis, which includes a screw-coupling part for arranging electromotive drivers on positions corresponding to plural screw recesses formed to the drive chassis and driving motor. Respective electromotive drivers are symmetrically arranged to each other, and the screw-coupling part is connected to a chuck member which screw-couples the driving motor and drive chassis by rotatably driving the symmetrically positioned electromotive drivers at the same speed and with the same torque in the opposite direction to each other by a pressing portion while moving in the motor shaft direction of the driving motor. The electromotive drivers of the screw-coupling part may be replaced with drivers driven by a single motor.

Abstract: An apparatus for automatically press-fitting a turntable has a turntable driving motor which is attachably/detachably installed to/from a driving motor fixing part for inserting a rotating shaft of the driving motor into a turntable assembly with significantly high precision to minimize eccentric error. Here, a first press-fitting part pressively fixes the driving motor to the driving motor fixing part, and a second press-fitting part descends the driving motor fixing part press-fitted with the driving motor in a motor shaft direction. The center of a turntable assembly fixing part is arranged at an extending line of driving motor shaft to allow a rotating shaft of the turntable assembly to be exactly coaxial with the driving motor.