Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: A finFET device and methods of forming a finFET device are provided. The method includes depositing a dummy gate over and along sidewalls of a fin extending upwards from a semiconductor substrate, forming a first gate spacer along a sidewall of the dummy gate, and plasma-doping the first gate spacer with carbon to form a carbon-doped gate spacer. The method further includes forming a source/drain region adjacent a channel region of the fin and diffusing carbon from the carbon-doped gate spacer into a first region of the fin to provide a first carbon-doped region. The first carbon-doped region is disposed between at least a portion of the source/drain region and the channel region of the fin.

Abstract: A semiconductor device, and a method of manufacturing, is provided. A dummy gate is formed on a semiconductor substrate. An interlayer dielectric (ILD) is formed over the semiconductor fin. A dopant is implanted into the ILD. The dummy gate is removed and an anneal is performed on the ILD. The implantation and the anneal lead to an enhancement of channel resistance by a reduction in gate dielectric thickness and to an enlargement of critical dimensions of a metal gate.

Abstract: An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.

Abstract: An elevating post includes a transmission (10), a driver (20), an outer tube (30) and a moving assembly (40). The driver (20) is connected to the transmission (10). The outer tube (30) receives the transmission (10) and the driver (20) and has a tube body (31) with a longitudinal trough (311). Two closed sections (312, 313) are separately disposed outside two ends of the longitudinal trough (311). The moving assembly (40) is operatably connected to the transmission (10) and has a plate (43) protruding from the tube body (31) by passing through the longitudinal trough (311) and being movable in the longitudinal trough (311).

Abstract: An elevating post includes a transmission (10), a driver (20), an outer tube (30) and a moving assembly (40). The driver (20) is connected to the transmission (10). The outer tube (30) receives the transmission (10) and the driver (20) and has a tube body (31) with a longitudinal trough (311). Two closed sections (312, 313) are separately disposed outside two ends of the longitudinal trough (311). The moving assembly (40) is operatably connected to the transmission (10) and has a plate (43) protruding from the tube body (31) by passing through the longitudinal trough (311) and being movable in the longitudinal trough (311).

Abstract: An actuator having a manual rotating mechanism and an anti-pinch mechanism includes an actuating body, a manual rotating mechanism, and an anti-pinch mechanism. The actuating body has a stretchable tube. The manual rotating mechanism has a sleeve assembly and a manual rotating wheel. The sleeve assembly has a central shaft and a connecting plate. The anti-pinch mechanism has a clutch wheel which is fixed to the stretchable tube and is movably sleeved around the central shaft. When the stretchable tube is blocked during a retraction stroke, the clutch wheel is detached from the connecting plate such that the clutch wheel follows the stretchable tube to idle. Therefore, the stretchable tube can be manually rotated to retract and the anti-pinch effect during the stretchable tube being retracted can be achieved.

Abstract: An electric table stand for simple assembly and adjustment includes a beam structure (10), support bars (20), and upright structures (30). Each of the support bars (20) includes a base (21) and a plurality of arms (211, 212, 213) extended from the base (21), wherein an accommodating space (A) is defined by the base (21) and the arms (211, 212, 213). One arm (213) of each of the support bars (20) supports one end of the beam structure (10), and the beam structure (10) is operatively moved in or out of the accommodating space (A). The upright structures (30) are connected to the support bars (20). Accordingly, it is easy to adjust and position each support bar (20) and each upright structure (30) on the beam structure (10).

Abstract: A power-driven table stand with combining mechanotronics includes: a horizontal bar structure (10); a pair of supporters (20), connected at two sides of the horizontal bar structure (10); a pair of vertical post structures (30), connected to each of the supporters (20) and having a motor (31); and an electrical device (40), having a controller (41) and a guide wiring (45), wherein the controller (40) is disposed on the horizontal bar structure (10), the guide wiring (45) is stored and hidden in the horizontal bar structure (10) and each of the supporters (20), and electrically connected to the controller (41) and the motor (31). Accordingly, power wires and signal wires can be effectively and properly stored and hidden.

Abstract: The present invention provides a method of designing a layout of a static random access memory (SRAM) pattern, the method includes the following steps: firstly, a target pattern is provided, and according to the target pattern, a plurality of first patterns and a first dummy pattern are formed in a substrate, the first pattern that disposed at the outermost boundary of the first patterns is defined as a first edge pattern, and the first dummy pattern is disposed adjacent to the first edge pattern, next, the first dummy pattern is removed, and afterwards, according to the target pattern, a plurality of second patterns are formed in the substrate, the second patterns comprises a second edge pattern that is disposed between the first edge pattern and an original position of the first dummy pattern.

Abstract: A finFET device and methods of forming a finFET device are provided. The method includes depositing a dummy gate over and along sidewalls of a fin extending upwards from a semiconductor substrate, forming a first gate spacer along a sidewall of the dummy gate, and plasma-doping the first gate spacer with carbon to form a carbon-doped gate spacer. The method further includes forming a source/drain region adjacent a channel region of the fin and diffusing carbon from the carbon-doped gate spacer into a first region of the fin to provide a first carbon-doped region. The first carbon-doped region is disposed between at least a portion of the source/drain region and the channel region of the fin.

Abstract: An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.

Abstract: A foam soap-providing machine with function of recycling soap-liquid, which comprises: a container containing a soap-liquid and having a soap-releasing portion; a shell-group including at least two detachable shell-bodies combinedly disposed on the outer peripheral surface of the soap-releasing portion; and a faucet mounted on the upper end of the soap-releasing portion and having a soap-feeding portion provided for flowing out the pressurized soap-liquid; wherein the soap-feeding portion has a joint end; wherein a foam-generating module used to generate a foam and a foam-recycling module used to recycle the extruded unused foam are comprised in the shell-group; thereby it can generate foam and recycle the remaining foam in the soap-releasing portion through a single motor. Accordingly, the present invention greatly saves the structural volume and prevents the soap-liquid from being dropped outside and wasted.

Abstract: The present invention provides a method of designing a layout of a static random access memory (SRAM) pattern, the method includes the following steps: firstly, a target pattern is provided, and according to the target pattern, a plurality of first patterns and a first dummy pattern are formed in a substrate, the first pattern that disposed at the outermost boundary of the first patterns is defined as a first edge pattern, and the first dummy pattern is disposed adjacent to the first edge pattern, next, the first dummy pattern is removed, and afterwards, according to the target pattern, a plurality of second patterns are formed in the substrate, the second patterns comprises a second edge pattern that is disposed between the first edge pattern and an original position of the first dummy pattern.

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: A foam soap-providing machine with function of recycling soap-liquid, which comprises: a container containing a soap-liquid and having a soap-releasing portion; a shell-group including at least two detachable shell-bodies combinedly disposed on the outer peripheral surface of the soap-releasing portion; and a faucet mounted on the upper end of the soap-releasing portion and having a soap-feeding portion provided for flowing out the pressurized soap-liquid; wherein the soap-feeding portion has a joint end; wherein a foam-generating module used to generate a foam and a foam-recycling module used to recycle the extruded unused foam are comprised in the shell-group; thereby it can generate foam and recycle the remaining foam in the soap-releasing portion through a single motor. Accordingly, the present invention greatly saves the structural volume and prevents the soap-liquid from being dropped outside and wasted.

Abstract: A sensing faucet for the integration of soap supply with water exit includes a main body configured with a mounting portion having a first mounting zone and second mounting zone, where the first mounting zone is used to accept a water supply module, and the second mounting zone a soap supply module, where an obtuse angle is formed between the first and second mounting zones. With the above structure, the soap supply module can conform to a human factor design besides the water and soap supply modules are integrated with each other in the same sensing faucet, allowing users direct soap supply according hand washing habits without needing to touch any other components, and the hand cleaning convenience can then be achieved.

Abstract: FinFET structures and methods of forming the same are disclosed. A device includes a semiconductor fin. A gate stack is on the semiconductor fin. The gate stack includes a gate dielectric on the semiconductor fin and a gate electrode on the gate dielectric. The gate electrode and the gate dielectric have top surfaces level with one another. A first inter-layer dielectric (ILD) is adjacent the gate stack over the semiconductor fin. The first ILD exerts a compressive strain on the gate stack.

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes following operations. A plurality of fin structures and a plurality of trenches are formed over a semiconductor substrate, wherein the fin structures are spaced apart by the trenches, and the fin structures are covered by a mask layer. A dielectric layer is formed over the substrate, wherein the dielectric layer is in the plurality of trenches. The dielectric layer is annealed. A plurality of dopants in the dielectric layer are formed when the fin structures are covered by the mask layer.