Abstract: A Ni—Pt alloy and target superior in workability containing 0.1 to 20 wt % Pt and having a Vickers hardness of 40 to 90. A method of manufacturing the Ni—Pt alloy comprises steps of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, neutralizing the electrolytically leached solution with ammonia, removing impurities through filtration with activated carbon, blowing carbon dioxide into the resultant solution to form nickel carbonate, exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, leaching a raw material Pt having a purity of 3N level with acid, subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and dissolving the resultant high purity Ni powder and high purity electrodeposited Pt. The method enables rolling of the Ni—Pt alloy ingot upon reducing the hardness thereof, which results in the stable and efficient manufacture of a rolled target.

Abstract: High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less; and a method for producing such high purity copper sulfate which includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration.

Abstract: High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less is provided. A method for producing such high purity copper sulfate includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration.

Abstract: In order to obtain a high purity sputtered film for a capacitor electrode of a semiconductor memory and to make the sputtered film have uniform thickness and good adhesiveness with Si substrate, a high-purity Ru alloy target is provided, wherein a total content of the platinum group elements excluding Ru is in a range of 15 to 200 wtppm and remnants are Ru and inevitable impurities. Also, provided is a manufacturing method of the high-purity Ru alloy target, comprising the steps of mixing Ru powder having a purity of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding of the mixed powder to obtain a compact, performing electron beam melting of the compact to obtain an ingot, and forging the ingot at 1400 to 1900° C.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and collecting indium or tin as oxides. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane to precipitate hydroxide of tin, thereafter extracting anolyte temporarily, and precipitating and collecting indium contained in the anolyte as hydroxide. With the methods for collecting valuable metal from an ITO scrap described above, indium or tin may be collected as oxides by roasting the precipitate containing indium or tin. Consequently, provided is a method for efficiently collecting indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap including a step of collecting tin by subjecting the ITO scrap to electrolysis. Further proposed is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and a tin collecting bath, dissolving the ITO scrap in the electrolytic bath, and thereafter collecting tin in the tin collecting bath. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of dissolving the ITO scrap by subjecting it to electrolysis as an anode in electrolyte, precipitating only tin contained in the solution as tin itself or a substance containing tin, extracting the precipitate, placing it in a collecting bath, re-dissolving this to obtain a solution of tin hydroxide, and performing electrolysis or neutralization thereto in order to collect tin.

Abstract: Provided is a method of recovering valuable metals from IZO scrap in which valuable metals are recovered as indium and zinc metals or suboxides by performing electrolysis using an insoluble electrode as an anode and an IZO scrap as a cathode. Specifically, this method enables the efficient recovery of indium and zinc from IZO scrap such as an indium-zinc oxide (IZO) sputtering target or IZO mill ends that arise during the manufacture of such a sputtering target.

Abstract: Provided are a method of recovering valuable metals from IZO scrap, wherein indium and zinc are recovered as hydroxides by using an IZO scrap as both an anode and a cathode, and performing electrolysis while periodically reversing polarity; and a method of recovering valuable metals from IZO scrap, wherein the hydroxides of indium and zinc obtained by the electrolysis are roasted and indium and zinc are recovered as oxides. Specifically, provided is a method which enables the efficient recovery of indium and zinc from IZO scrap such as a spent indium-zinc oxide (IZO) sputtering target and IZO mill ends arising during the manufacture of such a sputtering target.

Abstract: Provided are a method of recovering valuable metals from IZO scrap, wherein valuable metals are recovered as hydroxides of indium and zinc by using an insoluble electrode as an anode or a cathode and an IZO scrap as the other cathode or anode as the opposite electrode, and performing electrolysis while periodically reversing polarity; and a method of recovering valuable metals from IZO scrap, wherein the hydroxides of indium and zinc obtained by the electrolysis are roasted and valuable metals are recovered as oxides of indium and zinc. Specifically, provided is a method which enables the efficient recovery of indium and zinc from IZO scrap such as a spent indium-zinc oxide (IZO) sputtering target and IZO mill ends arising during the manufacture of such a sputtering target.

Abstract: Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

Abstract: Provided is a method of producing high purity ytterbium, wherein the high purity ytterbium is obtained by reducing crude ytterbium oxide in a vacuum with reducing metals composed of metals having a low vapor pressure, and selectively distilling ytterbium. Additionally provided are methods of achieving the high purification of ytterbium which has a high vapor pressure and is hard to refine in a molten state, and high purity ytterbium obtained thereby. Further provided is technology for efficiently and stably obtaining a sputtering target made of high purity material ytterbium, and a thin film for metal gates containing high purity material ytterbium.

Abstract: A high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. Further provided is a method of manufacturing such high purity Ni—V alloys capable of effectively reducing the foregoing impurities.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis and collecting the result as indium-tin alloy. Additionally provided is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and an indium-tin alloy collecting bath, dissolving the ITO in the electrolytic bath, and thereafter collecting indium-tin alloy in the indium-tin alloy collecting bath. These methods enable the efficient collection of indium-tin alloy from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

Abstract: Ultrahigh purity copper having a residual resistance ratio of 38,000 or greater and a purity of 8N or higher (excluding gas components of O, C, N, H, Sand P), and in particular ultrahigh purity copper wherein the respective elements of O, C, N, H, S and P as gas components are 1 ppm or less is provided.

Abstract: Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using an insoluble electrode as either an anode or a cathode, using a scrap containing conductive oxide as the counter cathode or anode, performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables the efficient recovery of valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.

Abstract: Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using scrap containing conductive oxide and performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables to efficiently recover valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.

Abstract: Provided are high purity copper sulfate wherein the content of Ag impurities is 1 wtppm or less, and having a purity of 99.99 wt % or higher, and a manufacturing method of high purity copper sulfate including the steps of dissolving crude copper sulfate crystals or copper metal, and subjecting this to active carbon treatment or solvent extraction and active carbon treatment in order to realize recrystallization. The present invention aims to provide a manufacturing method of high purity copper sulfate capable of efficiently removing impurities at a low cost by dissolving commercially available copper sulfate crystals in purified water or acid and thereafter subjecting this to the refining process, and high purity copper sulfate obtained thereby.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap by subjecting the ITO scrap to electrolysis and collecting the result as metallic indium. Specifically, the present invention proposes a method for selectively collecting metallic indium including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane, subsequently extracting anolyte temporarily, eliminating tin contained in the anolyte by a neutralization method, a replacement method or other methods, placing a solution from which the tin was eliminated in a cathode side again and performing electrolysis thereto; or a method for collecting valuable metal from an ITO scrap including the steps of obtaining a solution of In or Sn in an ITO electrolytic bath, eliminating the Sn in the solution, and collecting In in the collecting bath.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap in which a mixture of indium hydroxide and tin hydroxide or metastannic acid is collected by subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and roasting this mixture as needed to collect the result as a mixture of indium oxide and tin oxide. This method enables the efficient collection of indium hydroxide and tin hydroxide or metastannic acid, or indium oxide and tin oxide from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

Abstract: Provided is a method of recovering valuable metal from oxide system scrap including the steps of performing electrolysis using an insoluble electrode as an anode and an oxide system scrap as a cathode, and recovering the scrap of the cathode as metal or suboxide. Specifically, this method enables the efficient recovery of valuable metal from oxide system scrap of an indium-tin oxide (ITO) sputtering target or oxide system scrap such as mill ends that arise during the production of such a sputtering target.