Abstract: The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less.

Abstract: Provided are a high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni—V alloy capable of effectively reducing the foregoing impurities.

Abstract: The present invention relates to high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and an oxygen content of 40 wtppm or less, and a target and thin film formed from such high purity hafnium, and high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and in which the content of sulfur and phosphorus is respectively 10 wtppm or less. The present invention also relates to a high purity hafnium material which uses a hafnium sponge with reduced zirconium as the raw material, and in which the content of oxygen, sulfur and phosphorus containing in the hafnium is reduced, as well as to a target and thin film formed from such material, and to the manufacturing method of high purity hafnium. Thereby provided is efficient and stable manufacturing technology which enables the manufacture of a high purity hafnium material, and a target and thin film formed from such material.

Abstract: High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less; and a method for producing such high purity copper sulfate which includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration.

Abstract: The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less.

Abstract: A method of producing a higher purity metal comprising the step of electrolyzing a coarse metal material by a primary electrolysis to obtain a primary electrodeposited metal, the step of electrolyzing the material with the primary electrodeposited metal obtained in the primary electrolysis step used as an anode to obtain a higher purity electrolyte for secondary electrolysis, and the step of further performing secondary electrolysis by employing higher purity electrolytic solution than said electrolytic solution with said primary electrodeposited metal as an anode, whereby providing an electro-refining method that effectively uses electrodes and an electrolyte produced in a plurality of electro-refining steps, reuses the flow of an electrolyte in the system, reduces organic matter-caused oxygen content, and can effectively produce a high purity metal.

Abstract: The present invention relates to high-purity zirconium or hafnium with minimal impurities, particularly where the content of alkali metal elements such as Na, K; radioactive elements such as U, Th; transitional metals or heavy metals or high melting point metal elements such as Fe, Ni, Co, Cr, Cu, Mo, Ta, V; and gas components such as C, O, etc. is extremely reduced, as well as to an inexpensive manufacturing method of such high-purity zirconium or hafnium, thereby reducing the impurities hindering the guarantee of the operational performance of semiconductors. The present invention further relates to an inexpensive and safe manufacturing method of high-purity zirconium or hafnium powder from hydrogenated high-purity zirconium or hafnium powder.

Abstract: A titanium sputtering target that contains a concentration of oxygen in an amount of 20 ppm or less and has a maximum grain diameter of 20 &mgr;m or less. The target permits a sputtering operation to be accomplished substantially free from the formation of particles or the occurrence of an abnormal discharge phenomenon. In addition, the target contains a reduced amount of contaminants and is soft.

Abstract: Upon performing electrolysis with a solution containing nickel as the electrolytic solution, anolyte is adjusted to pH 2 to 5; impurities such as iron, cobalt and copper contained in the anolyte are eliminated by combining any one or two or more of the methods among adding an oxidizing agent and precipitating and eliminating the impurities as hydroxide, eliminating the impurities through preliminary electrolysis, or adding Ni foil and eliminating the impurities through displacement reaction; impurities are thereafter further eliminated with a filter; and the impurity-free solution is employed as catholyte to perform the electrolysis. The present invention relates to a simple method of performing electrolytic refining employing a solution containing nickel from nickel raw material containing a substantial amount of impurities, and provides technology on efficiently manufacturing high purity nickel having a purity of 5N (99.999 wt %) or more.

Abstract: The present invention relates to high-purity zirconium or hafnium with minimal impurities, particularly where the content of alkali metal elements such as Na, K; radioactive elements such as U, Th; transitional metals or heavy metals or high melting point metal elements such as Fe, Ni, Co, Cr, Cu, Mo, Ta, V; and gas components such as C, O, etc. is extremely reduced, as well as to an inexpensive manufacturing method of such high-purity zirconium or hafnium, thereby reducing the impurities hindering the guarantee of the operational performance of semiconductors. The present invention further relates to an inexpensive and safe manufacturing method of high-purity zirconium or hafnium powder from hydrogenated high-purity zirconium or hafnium powder.

Abstract: A method of producing a higher purity metal comprising the step of electrolyzing a coarse metal material by a primary electrolysis to obtain a primary electrodeposited metal, the step of electrolyzing the material with the primary electrodeposited metal obtained in the primary electrolysis step used as an anode to obtain a higher purity electrolyte for secondary electrolysis, and the step of further performing secondary electrolysis by employing higher purity electrolytic solution than said electrolytic solution with said primary electrodeposited metal as an anode, whereby providing an electro-refining method that effectively uses electrodes and an electrolyte produced in a plurality of electro-refining steps, reuses the flow of an electrolyte in the system, reduces organic matter-caused oxygen content, and can effectively produce a high purity metal.

Abstract: An Ni—Fe alloy material suitable for forming a ferromagnetic Ni—Fe alloy thin film is provided. The magnetic thin film produces a small number of particles during sputtering, and excels in corrosion resistance and magnetic properties. A method of manufacturing an Ni—Fe alloy sputtering target used to make the thin film is also provided. In addition, an Ni—Fe alloy sputtering target for forming magnetic thin films is provided. The sputtering target is characterized in that it has: an oxygen content of 50 ppm or less; an S content of 10 ppm or less; a carbon content of 50 ppm or less, and a total content of metal impurities other than the alloy components of 50 ppm or less. Such an Ni—Fe alloy target can be produced by melting and alloying high-purity materials obtained by dissolving the raw materials in hydrochloric acid, and performing ion exchange, activated-charcoal treatment, and electrolytic refining.

Abstract: A process for producing a high-purity Mn material comprising the steps of premelting crude Mn at 1250-1500° C. and vacuum distilling the melt at 1100-1500° C. The degree of vacuum during the vacuum distillation ranges from 5×10−6 torr to 10 torrs. A crucible for use in the vacuum distillation is a double crucible, which consists of inner and outer crucibles, and a carbon felt packed in the space therebetween. A high-purity Mn material for thin film deposition which contains a total of not more than 100 ppm impurity metallic elements, not more than 200 ppm oxygen, not more than 50 ppm nitrogen, not more than 50 ppm S, and not more than 100 ppm C.

Abstract: An Ni—Fe alloy material suitable for forming a ferromagnetic Ni—Fe alloy thin film is provided. The magnetic thin film produces a small number of particles during sputtering, and excels in corrosion resistance and magnetic properties. A method of manufacturing an Ni—Fe alloy sputtering target used to make the thin film is also provided. In addition, an Ni—Fe alloy sputtering target for forming magnetic thin films is provided. The sputtering target is characterized in that it has: an oxygen content of 50 ppm or less; an S content of 10 ppm or less; a carbon content of 50 ppm or less, and a total content of metal impurities other than the alloy components of 50 ppm or less. Such an Ni—Fe alloy target can be produced by melting and alloying high-purity materials obtained by dissolving the raw materials in hydrochloric acid, and performing ion exchange, activated-charcoal treatment, and electrolytic refining.

Abstract: There is provided a high-purity ruthenium sputtering target with a low impurity content, in particular producing extremely few particles, which is suitable for applications such as the formation of semiconductor thin films. The high-purity ruthenium sputtering target is manufactured by feeding crude ruthenium powder into a sodium hydroxide solution; blowing an ozone-containing gas while or after blowing chlorine gas into the solution to form ruthenium tetroxide; absorbing the ruthenium tetroxide in a hydrochloric acid solution or a mixed solution of hydrochloric acid and ammonium chloride, and evaporating the solution to dryness; sintering the resultant ruthenium salt in a hydrogen atmosphere to form high-purity ruthenium powder; and hot-pressing the ruthenium powder into a sputtering target.

Abstract: Mn alloy materials for magnetic materials contain 500 ppm or less, preferably 100 ppm or less, oxygen, 100 ppm or less, probably 20 ppm or less, sulfur, and preferably a total of 1000 ppm or less, more preferably 500 ppm or less, impurities (elements other than Mn and the alloying component). The alloying component that forms an alloy with Mn is one or two or more elements selected from the group consisting of Fe, Ir, Pt, pd, Rh, Ru, Ni, Cr and Co. Sputtering targets formed from the Mn alloy materials for use in depositing magnetic thin film, and the thin films so produced.

Abstract: An Ni—Fe alloy material suitable for forming a ferromagnetic Ni—Fe alloy thin film is provided. The magnetic thin film produces a small number of particles during sputtering, and excels in corrosion resistance and magnetic properties. A method of manufacturing an Ni—Fe alloy sputtering target used to make the thin film is also provided. In addition, an Ni—Fe alloy sputtering target for forming magnetic thin films is provided. The sputtering target is characterized in that it has: an oxygen content of 50 ppm or less; an S content of 10 ppm or less; a carbon content of 50 ppm or less, and a total content of metal impurities other than the alloy components of 50 ppm or less. Such an Ni—Fe alloy target can be produced by melting and alloying high-purity materials obtained by dissolving the raw materials in hydrochloric acid, and performing ion exchange, activated-charcoal treatment, and electrolytic refining.

Abstract: A process for producing a high-purity Mn material comprising the steps of premelting crude Mn at 1250-1500° C. and vacuum distilling the melt at 1100-1500° C. The degree of vacuum during the vacuum distillation ranges from 5×10−6 torr to 10 torrs. A crucible for use in the vacuum distillation is a double crucible, which consists of inner and outer crucibles, and a carbon felt packed in the space therebetween. A high-purity Mn material for thin film deposition which contains a total of not more than 100 ppm impurity metallic elements, not more than 200 ppm oxygen, not more than 50 ppm nitrogen, not more than 50 ppm S, and not more than 100 ppm C.

Abstract: A target material for sputtering composed of a perovskite type composite oxide sintered body of the general formula BaxSr1−xTiO3−y (where 0≦x<1 and 0≦y<0.5), in which the content of each element in the group consisting of Na, K, Mg, Fe, Ni, Co, Cr, Cu, and Al is 1 ppm or less and the content of each element of U and Th is 1 ppb or less. A thin film of BaxSr1−xTiO3 deposited by use of the target material exhibits outstanding dielectric properties, reduces the leakage current that has been a problem in the art, and prevents software error. The invention also provides a sputtering target of a sintered body having a relative density of 97% or more and an average grain diameter of 3 &mgr;m or less. It permits the manufacture of thin films with few particle defects and enhanced mechanical strength.

Abstract: A process comprises forming ruthenium tetroxide by blowing ozone-containing gas into crude ruthenium powder while hypochlorous acid is being added to the powder, allowing a hydrochloric acid solution to absorb the ruthenium tetroxide, evaporating the solution to dryness, and roasting the RuOCl.sub.3 crystals thus obtained in a hydrogen atmosphere. Thus a high-purity ruthenium material for thin film deposition, typically sputtering targey, is obtained which contains less than 1 ppm each of alkali metal elements, less than 1 ppm each of alkaline earth metal elements, less than 1 ppm each of transition metal elements, less than 10 ppb each of radioactive elements, a total of less than 500 ppm of carbon and gaseous ingredient elements, the material having a purity of ruthenium of at least 99.995% excluding the gaseous ingredient elements.